E/4526 IC Search Results

26NAB065V1

Contextual Info: SKiiP 26NAB065V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper */0  8 */0  - & .'    #    - &( 4526 .  - &( 4526 .' # 9 % + ; Values Units 122 (2 47(6 %22 4526 : &2 *   * < =2 >>> ? %(2 . =2 4&A6

4526 ic

Abstract: skiip 21 nab 12 l Semikron skiip 22 nab 12 e/4526 ic
Contextual Info: SKiiP 26NAB065V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper */0  8 */0  - & .'    #    - &( 4526 .  - &( 4526 . ' # 9 % + ; Values Units 122 (2 47(6 %22 4526 : &2 *   * < =2 >>> ? %(2 . =2 4&A6

Contextual Info: SKiiP 26NAB065V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper */0  8 */0  - & .'    #    - &( 4526 .  - &( 4526 .' # 9 % + < Values Units 122 (1 47&6 %%& 4:76 ; &2 *   * = 72 >>> ? %(2 . 72 4A26

SKIIP 11NAB12T4V1

Contextual Info: SKiiP 11NAB12T4V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper #1  7 (#1 + '& 0        + '& 4526 0 : Values Units /'22 /' 4/'6 '8 9 '2 (   ( ; 82 """ < /5& 0 /& 4/'6 '8   ; 82 """ < /5&

TE 2556

Abstract: T31B 2SC4526 2SC4525 2SC4838 286j
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4838 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2S C 4838 is a silicon NPN epitaxial planar typ e transistor Dimension in mm specifically designed fo r RF pow er am plifiers in 1.65GHz. FEATURES • High pow er gain : Gob £ 9.3dB, Po 6 6W

ECC85

Abstract: ecc85 tube ECC 85 hf tube cascode ECC85 philips PF0008 ECC-85 eCc8 pour
Contextual Info: PH ILIPS ECC 85 DOUBLE TRIODE for use as R.F. amplifier and selfoscillating mixer DOUBLE TRIODE pour utilisation, en amplificatrice H.P. et tube mélangeur auto-oscillateur DOPPELTRIODE zur Verwendung als HF-Verstärker und selbstschwingende Mischröhre Heating:

v 4520

Abstract: CRO4500A
Contextual Info: CRO4500A 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) -60 £(f) (dBc/Hz) -70 FEATURES • Frequency Range: 4499 - 4501 MHz • Tuning Voltage: 0.5-4.5 Vdc • MINI-16 - Style Package

MPS1317

Abstract: PT88
Contextual Info: LO-HENRY 88 SERIES sn u b b er cap acito rs IVIP88 p ie 8 L j S i J u v 1 t SUPERIOR ] “PRICE/PERFORM ANCE’ £ T ALTERNATIVES FOR •& ACROSS-THE-BUSS . POWER APPLICATIONS ^ The LO-HENRY 88 SERIES fills a critical need in the marketplace for a “cost-effective” snubber

16-Blt

Abstract: Q0-Q15
Contextual Info: 675 54F/74F675 Connection Diagrams 16-Bit Serial-ln, Serial/Parallel-Out Shift Register Description The ’F675 co n ta in s a 16-bit seriai-in, serial-out s h ift reg ister and a 16-bit parallel-out storage register. Separate serial input and o u tp u t pins are

Contextual Info: Tem ic U6808B S e m i c o n d u c t o r s Special Fail-Safe IC Description The U6808B is designed to support the fail-safe function of a safety critical system e.g. ABS. It includes a relay driver, a watchdog controlled by an external R/C-network and a reset circuit initiated by an over- and undervoltage

AK4526

Abstract: AK4526VQ zr38600 ym34 yss902 D7L marking
Contextual Info: This document is not intended for viewing onscreen. It is best viewed when printed and read from paper. Depending on your printer, you may need to select “Shrink to Fit” in the print dialog to ensure that the document prints correctly. [AK4526] ASAHI KASEI

7408 CMOS

Abstract: TTL 7452 ttl 74183 LS 74141 7408, 7404, 7486, 7432 7404 7408 7432 TTL 74289 74106 CMOS 4017 series ttl 74395
Contextual Info: KG10000 SERIES SEMI-CUSTOM CMOS GATE ARRAY CMOS SILOCON GATE ARRAY Th e KG10000 S e rie s is c o n sists o f s ilico n gate C M O S arrays w hose inte rco n n e ctio n are in itia lly u n s p e c ifie d , th e re fo re custom LSI is p ro ce sse d w ith o n ly one m ask ste p a cu sto m ize d m etal m ask a c c o rd ­

TIS84

Contextual Info: TYPES T1S84 TIS108 N-P-N SILICON TRANSISTORS BU LL ET IN NO. DL-S 7311254, AUGU ST 1 9 6 9 -R E V IS E D M AR C H 1973 HIGH-FREQUENCY SIlECTt TRANSISTOR» FOR TV TUNER AND IF APPLICATIONS Featuring Low-Feedback Capacitance and Forward-AGC Characteristics • TIS84 for Tuner RF Amplifiers

ic 4588

Abstract: C4574 c 4572
Contextual Info: C4500 Series EURO CASSETES 9 0 0 - 1 6 0 0 W AT T A C / D C - D C / D C - B AT T E R Y C H A R G E R S S I N G L E O U T P U T FEATURES • • • • • • • • DC input 10 - 800 V AC input 1 or 3-phase, 47 - 400 Hz DC output 8-400 V Continuous short circuit protection

2E12

Abstract: FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4
Contextual Info: FSYC055D, FSYC055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 70A Note , 60V, rDS(ON) = 0.012Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

smd-2 3-pad

Contextual Info: FSYC055D, FSYC055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 70A Note , 60V, rDS(ON) = 0 012i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

apm 4030

Contextual Info: A Member of Bird Technologies Group G E N E R A L C ATA L O G AND A P P L I C AT I O N S G U I D E QUALITY INSTRUMENTS FOR RF POWER MEASUREMENTS Bird Technologies Group BTG is the parent of Bird Electronic Corporation, Bird Component Products, and TX RX Systems Inc.

RTV3110

Abstract: 4526a Burle 4526A B12-43 BURLE INDUSTRIES 10-STAGE JEDEC B12-43 burle 4526A photomultiplier JEDEC B12-43 S-20
Contextual Info: Return To Product Page 4526A Photomultiplier 10-Stage Dormer-Window Type Having Multialkali Photocathode Deposited on a Reflective Substrate ! High Cathode Sensitivity Typical : Radiant at 530 nm: 70 x 10-3 A/W Luminous: 315 x 10-6 A/lm ! Quantum Efficiency (Typical):

power supply 5 Volt

Abstract: LF9502 32 bit barrel shifter circuit diagram using mux 77346 LT4420 LF3304 lf3370 LMU08 functional diagram of basic ALU using mux LF3312
Contextual Info: LOGIC Devices Incorporated Providing Chip Solutions Product Guide June 2001 www.logicdevices.com LOGIC DEVICES INCORPORATED DEVELOPS AND MARKETS HIGH PERFORMANCE INTEGRATED CIRCUITS THAT ARE UTILIZED IN A WIDE RANGE OF VIDEO AND MEDICAL IMAGE PROCESSING, TELECOMMUNICATIONS, COMPUTING, AND MILITARY

LF9502

Abstract: LMU217 ACCM 5 pin digital video mixer - tbc power supply 5 Volt LF3347 9027 scl110 LF3310 LF3311
Contextual Info: Company Profile LOGIC Devices Incorporated develops and markets high-performance integrated circuits that are utilized in a wide range of video and medical imaging processing, telecommunications, computing and military smart weapon applications. LOGIC Devices is commited to providing its customers with the highest performing

DDR3 RDIMM SPD JEDEC

Abstract: MT41J2GM4 MT72JS
Contextual Info: 16GB, 32GB x72, ECC, QR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT72JS(Z)S2G72PZ - 16GB MT72JS(Z)S4G72PZ - 32GB Features Figure 1: 240-Pin RDIMM (R/C AB) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

MT72JSZS4G72PZ-1G1

Contextual Info: 16GB, 32GB x72, ECC, QR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT72JSZS2G72PZ - 16GB MT72JSZS4G72PZ - 32GB Features Figure 1: 240-Pin RDIMM (R/C AB) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module

ALC100

Abstract: ST CD C226 VM036 BK1606 COD-51 LS-120 WD62 L420 eef 1208 PA6 GF 10 MD10
Contextual Info: D i a g r a m s M a in b o a r d G T LH W 3 b TLH A 6 T LH W S G TL H i« G T L H tf? GT L HA#6 \ U . tq : 02: I4 n : « ; K1 . ji ; s . m : G r. h i; » : pi . H . r ; E l, 0« . IB . 0) E2, IS . w . f t , ci 83 . A3 02, 2 1; Ai AS 84, C5 , g t lh w s

74LS82

Abstract: 74245 BIDIRECTIONAL BUFFER IC ic 4583 schmitt trigger core bit excess 3 adder using IC 7483 advantages for ic 7473 4 BIT COUNTER 74669 la 4508 ic schematic diagram XF107 74295 random number generator by using ic 4011 and 4017
Contextual Info: General Features The SCxD4 series of high performance CMOS gate arrays offers the user the ability to realise customised VLSI inte­ grated circuits featuring the speed performance previously obtainable only with bipolar technologies whilst retaining all the advantages of CMOS technology; low power consum p­