DYNAMIC RAM 64K X 1 Search Results

A416316B

Contextual Info: A416316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0

A426316B

Abstract: A426316BS A426316BV
Contextual Info: A426316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0

A416316AS-40

Contextual Info: A416316A Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. History Issue Date Remark 0.0 Initial issue September 7, 1999 Preliminary 0.1 Change ICC7 test condition from “all other input high levels

AK41128

Abstract: AK42064
Contextual Info: HIGH DENSITY DYNAMIC RANDCM ACCESS MEMORY MODULES ACCUTEK DESCRIPTION The Accutek family of high density dynamic RAM modules are comprised of 64K x 1 or 256K x 1 dynamic RAMs packaged in LCCs or PLCCs along with chip capacitors, mounted to multi-layer ceramic

Contextual Info: FUJITSU MICROELECTRONICS 7fl De| 374ci?t,5 DDDBDHQ M |~~>7z%-%h 7 FU JITSU • MB85101A-10, MB85101A-12, MB85101A-15 MOS 65,536 x 4-Bit Dynamic RAM Module Description The Fujitsu MB85101A Is a 64K x 4 dynamic RAM high density memory module. It consists of (our MB8264A DRAMs In 18-pad

GLT41116-35J4

Abstract: GLT710008
Contextual Info: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE May 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and

GLT41016-30J4

Abstract: EDO Corporation 64k dynamic RAM
Contextual Info: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Dec 1998 Rev 2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has

GLT41316-40J4

Contextual Info: G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and

GLT41216-30J4

Contextual Info: G -LINK GLT41216 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Aug 1999 Rev.2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41216 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41216 offers Fast Page mode with Extended Data Output, and has

GLT41216-40TC

Abstract: GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216-35TC GLT41216-40J4 GLT41216-45J4 GLT41216-45TC
Contextual Info: G -LINK GLT41216 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Feb 2004 Rev.2.2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41216 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41216 offers Fast Page mode with Extended Data Output, and has

MC68451

Abstract: MVME101 MVME215 MVME319 MVME110-1 MC68010 MC68881 MC6810 mvme202 MVME204
Contextual Info: Same as MVME120 except 512Kb Dynam ic RAM. MVME121 VMEbus P rocessor M odule with 12.5 MHz MC68010 CPU, 128Kb of dual-ported Dynamic RAM, three 16-bit tim ers, and two sockets for 2K x 8 to 64K x 8 bytes EPROM user provided . MVME025, MVME050, or other VMEbus System

Contextual Info: TM4164EC4 65,536 BY 4-BIT DYNAMIC RAM MODULE NOVEMBER 1983 - REVISED NOVEMBER 1985 SINGLE-IN-UNE PACKAGE 6 5 ,5 3 6 X 4 Organization TOP VIEW Single 5-V Supply (10% Tolerance) 22-Pin Single-in-Line Package (SIP) Utilizes Four 64K Dynamic RAMs in Plastic

Contextual Info: HM53462 Series 65,536-Word x 4-Bit Multiport CMOS Video RAM with Logic Operation Mode • DESCRIPTION HM 53462P Series The HM53462 is a 262,144-bit multiport memory equipped with a 64k-word x 4-bit Dynamic RAM port and a 256-word x 4-bit Serial Access Memory (SAM) port.

Contextual Info: FUJITSU MICROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS I>e| 374T7bH 0DQ30aH fi W ~ 70C 0 3 0 2 2 0T V i ' 2 3 * 7 FU JITSU • M B 8 5 1 0 3 A -1 2 , M B 8 5 1 0 3 A -1 5 MOS 65,536 x 8-Bit Dynamic RAM Module Daporlptlon The Fujitsu MB85103A Is a 64K x 8 dynamic RAM high density

Contextual Info: NN511662 series EDO Hyper Page Mode CMOS 64K x 16bit Dynamic RAM N PN > a< DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech­

MBB264A-18

Contextual Info: preliminary FUJITSU MOS Memories • MB8264A-12-W, MB8264A-15-W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W Is a 64K x 1 dynamic RAM intended for operation over the case temperature range -55*C to 110 *C. The part Is also

Contextual Info: irrteT ADWAN ! OMIFÜKßMTTOOM M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Military Maximum Access Time ns) M51C259HL-15 M51C259HL-20 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA)

T221160A

Contextual Info: tm TE CH T221160A 64K x 16 DYNAMIC RAM DRAM FAST PAGE MODE FEATURES • High speed access time : 25/30/35/40 ns • Industry-standard x 16 pinouts and timing functions. • Single 5V ±10% power supply. • All device pins are TTL- compatible. • 256-cycle refresh in 4ms.

Contextual Info: IC41C1664 IC41LV1664 Document Title 64K x 16 bit Dynamic RAM with EDO Page Mode Revision History Revision No History Draft Date 0A Initial Draft November 15,2001 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and

Contextual Info: iny M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM M ilitary M51C259HL-15 M51C259HL-20 150 200 Maximum Access Time ns Maximum Column Address Access Time (ns) 70 90 Maximum C H M O S Standby Current (mA) 0.1 0.1 Low Input/Output Capacitance

Contextual Info: VITELIC V51C259HL FAMILY HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 BIT CMOS DYNAMIC RAM V51C259HL-12 V51C259HL-15 V51C259HL-20 M aximum Access Time ns 120 150 200 M aximum Colum n A ddress Access Time (ns) 55 65 85 M axim um CMOS Standby Current (mA)

GLT41116

Abstract: GLT4116-30J4 GLT4116-35J4 GLT4116-40J4
Contextual Info: GLT41116 64k x 16 CMOS Dynamic RAM with Fast Page Mode FEATURES ◆ 65,536 words by 16 bits organization. ◆ Fast access time and cycle time. ◆ Dual CAS input. ◆ Low power dissipation. ◆ Read-Modify-Write, RAS-Only Refresh, CAS-before-RAS Refresh, Hidden Refresh and Test

Contextual Info: in te i 51C64L LOW POWER 64K X 1 CHMOS DYNAMIC RAM 51C64L-10 51C64L-12 Maximum Access Time ns 100 120 Maximum CHMOS Standby Current (mA) 0.05 0.05 • Fully TTL Compatible Inputs and Outputs ■ Low Power Data Retention — Standby c urrent, CHMOS — 50/xA (m ax.)

Contextual Info: in t e i 51 C259H HIGH PERFORMANCE STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM 5 1 C 2 5 9 H -1 5 Maximum Access Time ns Maximum Column Address Access Time (ns) Static Column Mode Operation - Continuous data rate over 12 MHz - Random access from address within row