DYNAMIC RAM 64K X 1 Search Results

A416316B

Contextual Info: A416316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0

A426316B

Abstract: A426316BS A426316BV
Contextual Info: A426316B Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 15, 2000 Preliminary November, 2000, Version 0.0

A426316AS-35

Abstract: A426316AS-35L A426316AS-30L
Contextual Info: A426316A Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue October 26, 1999 Preliminary October, 1999, Version 0.0

Contextual Info: A4263161A Series 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Preliminary WITH DUAL WE Document Title 64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE WITH DUAL WE Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue October 26, 1999

A416316AS-40

Contextual Info: A416316A Series Preliminary 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Document Title 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Revision History Rev. No. History Issue Date Remark 0.0 Initial issue September 7, 1999 Preliminary 0.1 Change ICC7 test condition from “all other input high levels

AK41128

Abstract: AK42064
Contextual Info: HIGH DENSITY DYNAMIC RANDCM ACCESS MEMORY MODULES ACCUTEK DESCRIPTION The Accutek family of high density dynamic RAM modules are comprised of 64K x 1 or 256K x 1 dynamic RAMs packaged in LCCs or PLCCs along with chip capacitors, mounted to multi-layer ceramic

Contextual Info: FUJITSU MICROELECTRONICS 7fl De| 374ci?t,5 DDDBDHQ M |~~>7z%-%h 7 FU JITSU • MB85101A-10, MB85101A-12, MB85101A-15 MOS 65,536 x 4-Bit Dynamic RAM Module Description The Fujitsu MB85101A Is a 64K x 4 dynamic RAM high density memory module. It consists of (our MB8264A DRAMs In 18-pad

GLT41116-35J4

Abstract: GLT710008
Contextual Info: G -LINK GLT41116 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE May 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41116 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode ,and has both BYTE WRITE and

GLT41016-30J4

Abstract: EDO Corporation 64k dynamic RAM
Contextual Info: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Dec 1998 Rev 2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has

GLT41316-40J4

Contextual Info: G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 Rev 2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and

GLT41216-30J4

Contextual Info: G -LINK GLT41216 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Aug 1999 Rev.2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41216 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41216 offers Fast Page mode with Extended Data Output, and has

GLT41216-40TC

Abstract: GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216-35TC GLT41216-40J4 GLT41216-45J4 GLT41216-45TC
Contextual Info: G -LINK GLT41216 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Feb 2004 Rev.2.2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41216 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41216 offers Fast Page mode with Extended Data Output, and has

MVME101

Abstract: MC68451 MVME110-1 cache ram 64k x 8 MVME205 MVME215 mvme202 1Mb static ram MVME050 MVME123
Contextual Info: Same as MVME120 except 512Kb Dynam ic RAM. MVME121 VMEbus P rocessor M odule with 12.5 MHz MC68010 CPU, 128Kb of dual-ported Dynamic RAM, three 16-bit tim ers, and two sockets for 2K x 8 to 64K x 8 bytes EPROM user provided . MVME025, MVME050, or other VMEbus System

MC68451

Abstract: MVME101 MVME215 MVME319 MVME110-1 MC68010 MC68881 MC6810 mvme202 MVME204
Contextual Info: Same as MVME120 except 512Kb Dynam ic RAM. MVME121 VMEbus P rocessor M odule with 12.5 MHz MC68010 CPU, 128Kb of dual-ported Dynamic RAM, three 16-bit tim ers, and two sockets for 2K x 8 to 64K x 8 bytes EPROM user provided . MVME025, MVME050, or other VMEbus System

Contextual Info: HM53462 Series 65,536-Word x 4-Bit Multiport CMOS Video RAM with Logic Operation Mode • DESCRIPTION HM 53462P Series The HM53462 is a 262,144-bit multiport memory equipped with a 64k-word x 4-bit Dynamic RAM port and a 256-word x 4-bit Serial Access Memory (SAM) port.

Contextual Info: FUJITSU MICROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS I>e| 374T7bH 0DQ30aH fi W ~ 70C 0 3 0 2 2 0T V i ' 2 3 * 7 FU JITSU • M B 8 5 1 0 3 A -1 2 , M B 8 5 1 0 3 A -1 5 MOS 65,536 x 8-Bit Dynamic RAM Module Daporlptlon The Fujitsu MB85103A Is a 64K x 8 dynamic RAM high density

Contextual Info: REV. 1 PRODUCT SPECIFICATION GM53C261 64K X 4 MULTIPORT VIDEO RAM Description Features The GM53C261 is a high speed 65,536 x 4 bit multiport CMOS dynamic memory. The two ports, random access and serial access, are configured to offer optimum flexibility in graphics and other

Contextual Info: NN511662 series EDO Hyper Page Mode CMOS 64K x 16bit Dynamic RAM N PN > a< DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech­

MBB264A-18

Contextual Info: preliminary FUJITSU MOS Memories • MB8264A-12-W, MB8264A-15-W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W Is a 64K x 1 dynamic RAM intended for operation over the case temperature range -55*C to 110 *C. The part Is also

1A43

Abstract: 4464 ram m4464 4464 64k 4464 texas
Contextual Info: ADVANCE INFORMATION TM4464LU8 65,536 BY 8 BIT DYNAMIC RAM MODULE OCTOBER 9 1 8 5 - • 6 5 .53 6 X 8 Organization REVISED NOVEMBER 1 9 8 5 U SINGLE-IN-LINE PACKAGE t o p v ie w i Single 5-V Supply (10% Tolerance 30-Pin Singie-in-Line Package (SIP) Utilizes Two 64K X 4 Dynamic RAMs in

Contextual Info: irrteT ADWAN ! OMIFÜKßMTTOOM M51C259HL HIGH PERFORMANCE LOW POWER STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Military Maximum Access Time ns) M51C259HL-15 M51C259HL-20 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHMOS Standby Current (mA)

Contextual Info: ADVANCE INFORMATION TM4164EQ5 65,536 BY 5 BIT DYNAMIC RAM MODULE SEPTEM BER 1986 - REVISED NOVEMBER 1985 Q SINGLE-IN-LINE P A C K A G E 65,536 X 5 Organization TO P VIEW Single 5-V Supply (10% Tolerance) 24-Pin Single-in-Line Package (SIP) Utilizes Five 64K Dynamic RAMs in Plastic

T221160A

Contextual Info: tm TE CH T221160A 64K x 16 DYNAMIC RAM DRAM FAST PAGE MODE FEATURES • High speed access time : 25/30/35/40 ns • Industry-standard x 16 pinouts and timing functions. • Single 5V ±10% power supply. • All device pins are TTL- compatible. • 256-cycle refresh in 4ms.

Contextual Info: IC41C1664 IC41LV1664 Document Title 64K x 16 bit Dynamic RAM with EDO Page Mode Revision History Revision No History Draft Date 0A Initial Draft November 15,2001 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and