DY TRANSISTOR Search Results

QM75DY-24

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM7 5 DY-2 4 • Ic • V c ex • hFE Collector current. 75A Collector-emitter voltage. 1200V DC current gain. 75

30N03

Abstract: marking code ff p SMD Transistor smd transistor TN 6 pin TRANSISTOR SMD CODE XI G1337 TRANSISTOR SMD MARKING CODE XI SPB30N03 SPP30N03 SMD transistor 2x sot 23 smd code book B3
Contextual Info: SPP 30N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vbs • Enhancement mode Drain-Source on-state resistance ^ D S o n • Avalanche rated Continuous drain current b V 30 0.023 a A 30 • dy/df rated

BB3581

Abstract: HIGH-VOLTAGE OPERATIONAL AMPLIFIER
Contextual Info: T EL E DY N E COMPONENTS 3bE D 0^17bQ2 00Q7bH2 4 «TSC WTELEDYNE COMPONENTS 1481 OPERATIONAL AMPLIFIER — HIGH-VOLTAGE FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The 1481 is a high-voltage operational amplifier capable of operating with supply voltages as high as +75V or as low

tone Dialer

Abstract: ba20 transistor lr48202
Contextual Info: SHARP EL EK / MELEC D IV 1SE o | a ific n n a a c m w P u ls e /T o n e D ia le r LSI LR 48202 LR48202 • / -Dy-Ö-? - Pulse/Tone Dialer LSI D e s crip tio n Pin Connections The LR48202 is a CMOS pulse/tone dialer LSI poviding auto-dialing and redialing. It features a builtin 32-digit X 20 or 16-digit X 40 one-touch or twotouch memory and 32-digit redial memory.

0P279

Abstract: TI OP279 CP279 najog
Contextual Info: AN A LO G D E V IC E S Rail-toRail high Output Current Operational Anplifier 0P279 F U N C T IO N A L B L O C K D IA G R A M FEATURES R a il-to -R a il In p u ts a n d O u t p u t s 8 - L ea d N a rr o w B o dy 8 - L ead P la s tic D IP H ig h O u tp u t C u rr e n t: ± 8 0 m A

185t2

Abstract: bdy28 BF 184 184T2 BDY26 BDY27 185T2A 185T2B
Contextual Info: * B D Y 2 6 183 T2 *B D Y 2 7 184 12 *B D Y 28 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM , MESA DIFFUSES ^ Preferred device Dispositif recommandé LF large signal power amplification 180 V 200 V BDY 26 , 183 T2 BDY 27 , 184 T2

2N 3055

Abstract: 2N3055 ESM434 BDX 71 2N5294 2N6109 2N6111 ESM435 ESM142 84132N
Contextual Info: N PN Power transistors « Homobase » L l: amplifier and switching » Transistors de puissance « Homobase » Amplification et commutation BF Case f*tot m * B oîtie r O ui _ Compì. > Type C (A ^21E m in max A / (A) Tease 25 C / v CEsat iv i y 'B (A )

2N6155

Abstract: 2N67 2N6756 2N6156 D-05N md-141 2N6755
Contextual Info: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 60V -100V rDs on = 0.18 fi and 0.25 fl Features: • SO A is p o w e r-d is s ip a tio n lim ite d

diode b1c

Contextual Info: SK 85 MH 10 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET L<BB LOBB Q< Q<W ?- G HI J$K 407,- %*8,23.-, -', .6.,+ ?- G HI ;SN> J$T M> *' X M &-T ?- G SN J$T M> ?Y Inverse diode SEMITOP 2 MOSFET Module Q] G @ Q< Q]W G @ Q<W ?Y Preliminary Data

Contextual Info: FQD4P40 P-Channel QFET MOSFET -400 V, -2.7 A, 3.1 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

Contextual Info: FQT2P25 P-Channel QFET MOSFET -250 V, -0.55 A, 4.0 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

Contextual Info: FQB9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state

Contextual Info: FQP11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

Transistors bd 133

Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
Contextual Info: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20

C3656

Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
Contextual Info: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)

310M

Abstract: CM601 02N 60P ft06 HSC5458 200S A190 A192 A193 A390
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

TIL78

Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

2N6770

Abstract: 2N6769
Contextual Info: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited

intersil PART MARKING ISL81387IAZ

Abstract: ISL41387 ISL81387
Contextual Info: ISL81387, ISL41387 Data Sheet December 20, 2005 ±15kV ESD Protected, Dual Protocol RS-232/RS-485 Transceivers FN6201.1 Features These devices are BiCMOS interface ICs that are user configured as either a single RS-422/485 differential transceiver, or as a dual (2 Tx, 2 Rx) RS-232 transceiver.

pin diagram of RS 485

Abstract: ISL3331 pin diagram of max 485 WITH 9 PIN CONNECTOR RS-485 ISL3330 ISL3330IAZ
Contextual Info: ISL3330, ISL3331 Data Sheet May 20, 2008 3.3V, ±15kV ESD Protected, Dual Protocol RS-232/RS-485 Transceivers These devices are BiCMOS interface ICs that are user configured as either a single RS-422/RS-485 differential transceiver, or as a dual (2 Tx, 2 Rx) RS-232 transceiver.

SOT-89

Abstract: 2SA1201
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1201 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current : -800 mA ICM Collector-base voltage

smd transistor DY

Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTA1661 Features High Voltage: VCEO=-120V High Transition Frequency:fT=120MHz Small Flat Package Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Colletor-Base Voltage VCBO -120

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1201 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

smd transistor dy

Abstract: KTA1661
Contextual Info: Transistors SMD Type Epitaxial Planar PNP Transistor KTA1661 Features High Voltage: VCEO=-120V High Transition Frequency:fT=120MHz Small Flat Package Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Colletor-Base Voltage VCBO -120 V Colletor-Emitter Voltage