DUAL TRANSISTOR O2 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD22K Preliminary DUAL TRANSISTOR DIGITAL TRANSISTOR BUILT-IN RESISTORS  DESCRIPTION The UTC UD22K is a dual transistor, including an NPN transistor and a PNP transistor.  FEATURES * Built-in bias resistors that implies easy ON/OFF applications.

Contextual Info: 7*^ 12 4 3 TRANSISTOR MODULE 00021 37 4AA QCA30B/QCB3QA40/60 UL;E76102(M QCA30B and QCB30A are dual Darlin­ 94max gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.

D 1398 Transistor

Abstract: BFG32 BFG96 DD311
Contextual Info: Phillp^em iconductore _ bbS3131 ÜD3114b 712 Product specification M A P X Ê PNP 5 GHz wideband transistor BFG32 PINNING DESCRIPTION PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in wideband amplifiers, such as MATV

dual P-CHANNEL 30V DS MOSFET

Abstract: NDS8958 Dual N & P-Channel MOSFET
Contextual Info: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

microcontroller m

Abstract: BSTBY PWM IC 8 PIN pwm system TB6592FL
Contextual Info: TB6592FL Toshiba Bi-CD Integrated Circuit Silicon Monolithic TB6592FL Dual-Bridge Driver IC for DC motor TB6592FL is a dual-bridge driver IC for DC motor with output transistor in LD MOS structure with low ON-resistor. Two input signals, IN1 and IN2, can chose one of four modes such as CW,

pmi dac08

Abstract: DAC08
Contextual Info: A N A L O G . E Ü D E V I C E S / P M I D I V S b E D • O ô l b f l O S MAT-03 0 Q G T 3 4 Ö 1 ■ LOW NOISE, MATCHED, _ DUAL PNP TRANSISTOR P r e c ip it in M o i i o l i t h i c s h ic . FEATURES • • • • • • • • Dual Matched PNP Transistor

TB6552

Abstract: SSOP16 SSOP16-P-225-0 TB6552FL TB6552FN
Contextual Info: TB6552FN/FL Toshiba Bi-CD Integrated Circuit Silicon Monolithic TB6552FN,TB6552FL Dual-Bridge Driver IC for DC motor TB6552FN/FL is a dual-bridge driver IC for DC motor with output transistor in LD MOS structure with low ON-resistor. Two input signals, IN1 and IN2, can chose one of four modes such as

Contextual Info: Ordering number : EN7645B MCH6536 Bipolar Transistor http://onsemi.com –12V 15V, (–1A)1.4A, Low VCE(sat) Complementary Dual MCPH6 Applications • MOSFET gate drivers, low-frequency power amplifier, high-speed switching, motor drivers Features • •

gs 1117 ax

Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
Contextual Info: I f\ A dvanced L in e a r D e v ic e s , In c . J ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY APPLICATIONS GENERAL DESCRIPTION The ALD 1107/ALD 1117 are m onolithic quad/dual P-channel enhance­ m entm ode matched M O SFET transistor arrays intended fo r a broad range

MS6130L-70JC

Contextual Info: MS6130 FEBRUARY 1992 1K x 8 CMOS Dual Port SRAM FEATURES DESCRIPTION • High-speed - 55/70/90 ns The MOSEL MS6130 is a 8,192 bit dual port static random access memory organized as 1,024 words by 8 bits. It is built with MOSEL's high perofrmance twin tub CMOS process. Eight-transistor full CMOS memory cell

CI D 2530

Abstract: IC A 2531
Contextual Info: E s DUAL HIGH-SPEED TRANSISTOR OPTOCOUPLERS ï i OPTOELECTRONICS HCPL-2530 HCPL-2531 PACKAGE DIMENSIONS DESCRIPTION f t f t db ¿3 The HCPL-2530/31 dual o pto cou p le rs contain tw o com ple te ly separated 700 nm GaAsP LED em itters each o ptica lly c o up le d to

STK4171X

Abstract: STK4171
Contextual Info: Ordering number:ENN3671 Thick Film Hybrid IC STK4171X 2ch AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.02%) Features Package Dimensions • Built-in muting transistor unit:mm 4146 Function [STK4171X] • Dual-channel AF power amplifier 105.0

FLP2531

Abstract: phototransistor FPT 100
Contextual Info: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IB A TECHNICAL TLP2530, TLP2531 DATA GaAfAs IRED & PHOTO IC TLP2530 DEGITAL LOGIC ISOLATION LINE RECEIVER POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTER The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a

Contextual Info: <Q £> C-MOS NJ 2-OUTPUT POSITIVE VOLTAGE The NJU7204 series is a 2-output C-MOS positive voltage regulator which contains dual system of internal accurate voltage reference, error amplifier, control transistor output voltage setting resistor and strobe circuit.

2N3904 TRANSISTOR SMD

Abstract: HCPL-5501 2n3904 smd pdf data application note 2n3904 smd pin configuration diagram class h amps optocoupler smd 16 pin SMD MARKING CODE transistor smd transistor marking PA 4N55 6N135
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications Technical Data Agilent 4N55*, 5962-87679, HCPL-553X, HCPL-653X, HCPL-257K, HCPL-655X, 5962-90854, HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device Part

Contextual Info: 4N55*, 5962-87679, HCPL-553X, HCPL-653X, HCPL-257K, HCPL-655X, 5962-90854, HCPL-550X Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications Data Sheet *See matrix for available extensions. Description Features These units are single, dual and quad channel, hermetically

KB836

Abstract: KB836A KB836B KB836L
Contextual Info: PHOTOCOUPLER KB836 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE HIGH COLLECTOR VOLTAGE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 3.Compact dual-in-line package

KB816B

Abstract: KB816D KB816 KB816AB
Contextual Info: PHOTOCOUPLER KB816 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE HIGH COLLECTOR VOLTAGE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 3.Compact dual-in-line package

KB826

Abstract: KB826A KB826B KB826L 826 8-PIN
Contextual Info: PHOTOCOUPLER KB826 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE HIGH COLLECTOR VOLTAGE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 0Vrms) 3.Compact dual-in-line package

KB817

Abstract: KB817A KB817AB KB817B KB817C KB817D KB817L
Contextual Info: PHOTOCOUPLER KB817 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms 2.Compact dual-in-line package KB817:1-channel type 3.Recognized by UL and CUL, file NO. E225308

5898

Abstract: KB846 KB846A KB846B KB846L
Contextual Info: PHOTOCOUPLER KB846 GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE HIGH COLLECTOR VOLTAGE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 3.Compact dual-in-line package