DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 Search Results

Contextual Info: STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These

4920n

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 AF4920N AA MARKING CODE SO8
Contextual Info: AF4920N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

MAG90X95

Contextual Info: MAG90X95 MAG91X96 TEC M A G N A MECHANICAL DATA Dimensions in mm COMPLIMENTARY PAIR DUAL CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS M ax. 1 1.43 0.450 1.09 (0.043) 0.97 (0.038) * * Dia. 1 ' Î • 1.63 (0.064) 1.52 (0.060) 6.35 (0.250) FEATURES

apm4500a

Abstract: 6401W APM4500AK APM4500
Contextual Info: APM4500AK Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 20V/8A, RDS(ON) =22mΩ(typ.) @ VGS = 4.5V RDS(ON) =30mΩ(typ.) @ VGS = 2.5V • P-Channel Top View of SOP − 8 -20V/-4.3A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V

APM4546

Abstract: APM4546J CH-140 P-Channel MOSFET code L 1A MS-001 STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4
Contextual Info: APM4546J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 30V/8A, RDS(ON) =20mΩ (typ.) @ VGS = 10V RDS(ON) =27mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -30V/-6A, RDS(ON) =38mΩ (typ.) @ VGS =-10V

APM4546J

Abstract: APM4546
Contextual Info: APM4546J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 30V/8A, RDS(ON) =20mΩ (typ.) @ VGS = 10V RDS(ON) =24mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -30V/-6A, RDS(ON) =38mΩ (typ.) @ VGS =-10V

apm6048

Abstract: APM6048D P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V APM6048DU4 apm60 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 To-252-4
Contextual Info: APM6048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description D1 D2 N-Channel 60V/8A, RDS(ON)=40mΩ (typ.) @ VGS=10V RDS(ON)=60mΩ (typ.) @ VGS=4.5V • P-Channel -60V/-8A, RDS(ON)=85mΩ (typ.) @ VGS= -10V S1 G1 RDS(ON)=105mΩ (typ.) @ VGS=-4.5V

APM4500

Abstract: P-Channel MOSFET code L 1A APM4500K STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4
Contextual Info: APM4500K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel D1 D1 20V/8A, RDS(ON) =22mΩ(typ.) @ VGS = 4.5V RDS(ON) =30mΩ(typ.) @ VGS = 2.5V • S1 G1 S2 G2 P-Channel Top View of SOP − 8 -20V/-4.3A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V

apm4550

Abstract: APM4550J MOSFET N-CH 200V STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A APM4550J MOSFET APM4550 dip8
Contextual Info: APM4550J Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 30V/8A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of DIP − 8 -30V/-7A, RDS(ON) = 40mΩ (typ.) @ VGS = -10V

APM4500A

Abstract: APM4500 MOSFET N-CH 200V STD-020C
Contextual Info: APM4500AK Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 20V/8A, RDS(ON) =22mΩ(typ.) @ VGS = 4.5V RDS(ON) =30mΩ(typ.) @ VGS = 2.5V • P-Channel Top View of SOP − 8 -20V/-4.3A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V

LT3742

Abstract: MBRD320 PDS540 SBM1040 UPS340 UPS840 Super Capacitor Charger Nippon capacitors
Contextual Info: LT3742 Dual, 2-Phase Step-Down Switching Controller Features n n n n n n n n n n Description Wide Input Voltage Range: 4V to 30V Wide Output Voltage Range: 0.8V to VIN Low Shutdown IQ: 20µA Out-of-Phase Controllers Reduce Required Input Capacitance and Power Supply Induced Noise

LT3742

Contextual Info: LT3742 Dual, 2-Phase Step-Down Switching Controller FEATURES n n n n n n n n n n DESCRIPTION Wide Input Voltage Range: 4V to 30V Wide Output Voltage Range: 0.8V to VIN Low Shutdown IQ: 20µA Out-of-Phase Controllers Reduce Required Input Capacitance and Power Supply Induced Noise

apm4500a

Abstract: APM4500
Contextual Info: APM4500AK Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • D1 D1 D2 N-Channel 20V/8A, D2 RDS(ON) =22mΩ(typ.) @ VGS = 4.5V S1 G1 S2 G2 RDS(ON) =30mΩ(typ.) @ VGS = 2.5V • P-Channel Top View of SOP − 8 -20V/-4.3A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V

TLF35584

Abstract: TLE9180 77GHz Radar TLE5041 TLE8000 TLE8758 RRN7740 BGT24ATR12 TLE8760 RTN7730
Contextual Info: Driving the Future of Automotive Electronics Automotive Application Guide www.infineon.com/automotive 2 Contents Challenges and Trends 04 Safety Applications 06 Body Applications 22 Powertrain Applications 37 H EV Applications 48 Enhanced Communication 54

8928a

Abstract: SOIC-16 FDS8928A
Contextual Info: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

8928a

Abstract: FDS8928A SOIC-16 1130 pch
Contextual Info: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: DMN2011UFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Features and Benefits V BR DSS RDS(ON) max 20V 9.5mΩ @ VGS = 4.5V 13mΩ @ VGS = 2.5V • • • • • • • ID max TA = +25°C 12.2 A 10.4 A Low On-Resistance Low Input Capacitance

capacitor 2.2n 0805 1

Abstract: SC2542 SC2542TETRT
Contextual Info: SC2542 High Performance Wide Input Range Dual Synchronous Buck Controller POWER MANAGEMENT Description Features SC2542 is a high performance dual PWM controller. It is designed to convert a widely ranged battery rail down to two independent output rails. The PWM operation of the

220 to 9 200ua adaptor switching circuit

Abstract: si4800 schematic SMPS 24V SPWM IC SC2542 SC2542TETRT C2542
Contextual Info: SC2542 High Performance Wide Input Range Dual Synchronous Buck Controller POWER MANAGEMENT Description Features SC2542 is a high performance dual PWM controller. It is designed to convert a widely ranged battery rail down to two independent output rails. The PWM operation of the

8958a

Abstract: FDS8958A FDS 8958A F63TNR F852 L86Z SOIC-16 n-Channel 12-V D-S MOSFET sot-23
Contextual Info: June 1998 FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

F63TNR

Abstract: F852 FDS8928A L86Z SOIC-16
Contextual Info: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: June 1998 FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very