DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 Search Results

Contextual Info: STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These

4920n

Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 AF4920N AA MARKING CODE SO8
Contextual Info: AF4920N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

apm4500a

Abstract: 6401W APM4500AK APM4500
Contextual Info: APM4500AK Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 20V/8A, RDS(ON) =22mΩ(typ.) @ VGS = 4.5V RDS(ON) =30mΩ(typ.) @ VGS = 2.5V • P-Channel Top View of SOP − 8 -20V/-4.3A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V

apm6048

Abstract: APM6048D P-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V APM6048DU4 apm60 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 To-252-4
Contextual Info: APM6048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description D1 D2 N-Channel 60V/8A, RDS(ON)=40mΩ (typ.) @ VGS=10V RDS(ON)=60mΩ (typ.) @ VGS=4.5V • P-Channel -60V/-8A, RDS(ON)=85mΩ (typ.) @ VGS= -10V S1 G1 RDS(ON)=105mΩ (typ.) @ VGS=-4.5V

apm4550

Abstract: APM4550J MOSFET N-CH 200V STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A APM4550J MOSFET APM4550 dip8
Contextual Info: APM4550J Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 30V/8A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of DIP − 8 -30V/-7A, RDS(ON) = 40mΩ (typ.) @ VGS = -10V

APM4500A

Abstract: APM4500 MOSFET N-CH 200V STD-020C
Contextual Info: APM4500AK Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 20V/8A, RDS(ON) =22mΩ(typ.) @ VGS = 4.5V RDS(ON) =30mΩ(typ.) @ VGS = 2.5V • P-Channel Top View of SOP − 8 -20V/-4.3A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V

LT3742

Abstract: MBRD320 PDS540 SBM1040 UPS340 UPS840 Super Capacitor Charger Nippon capacitors
Contextual Info: LT3742 Dual, 2-Phase Step-Down Switching Controller Features n n n n n n n n n n Description Wide Input Voltage Range: 4V to 30V Wide Output Voltage Range: 0.8V to VIN Low Shutdown IQ: 20µA Out-of-Phase Controllers Reduce Required Input Capacitance and Power Supply Induced Noise

LT3742

Contextual Info: LT3742 Dual, 2-Phase Step-Down Switching Controller FEATURES n n n n n n n n n n DESCRIPTION Wide Input Voltage Range: 4V to 30V Wide Output Voltage Range: 0.8V to VIN Low Shutdown IQ: 20µA Out-of-Phase Controllers Reduce Required Input Capacitance and Power Supply Induced Noise

apm4500a

Abstract: APM4500
Contextual Info: APM4500AK Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • D1 D1 D2 N-Channel 20V/8A, D2 RDS(ON) =22mΩ(typ.) @ VGS = 4.5V S1 G1 S2 G2 RDS(ON) =30mΩ(typ.) @ VGS = 2.5V • P-Channel Top View of SOP − 8 -20V/-4.3A, RDS(ON) =80mΩ(typ.) @ VGS =-4.5V

Contextual Info: DMN2013UFX Dual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = +25°C 11.5mΩ @ VGS = 4.5V 10 A 14mΩ @ VGS = 2.5V 9A V(BR)DSS 20V Description •     Low On-Resistance Low Input Capacitance Fast Switching Speed

TLF35584

Abstract: TLE9180 77GHz Radar TLE5041 TLE8000 TLE8758 RRN7740 BGT24ATR12 TLE8760 RTN7730
Contextual Info: Driving the Future of Automotive Electronics Automotive Application Guide www.infineon.com/automotive 2 Contents Challenges and Trends 04 Safety Applications 06 Body Applications 22 Powertrain Applications 37 H EV Applications 48 Enhanced Communication 54

8928a

Abstract: SOIC-16 FDS8928A
Contextual Info: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

capacitor 2.2n 0805 1

Abstract: SC2542 SC2542TETRT
Contextual Info: SC2542 High Performance Wide Input Range Dual Synchronous Buck Controller POWER MANAGEMENT Description Features SC2542 is a high performance dual PWM controller. It is designed to convert a widely ranged battery rail down to two independent output rails. The PWM operation of the

220 to 9 200ua adaptor switching circuit

Abstract: si4800 schematic SMPS 24V SPWM IC SC2542 SC2542TETRT C2542
Contextual Info: SC2542 High Performance Wide Input Range Dual Synchronous Buck Controller POWER MANAGEMENT Description Features SC2542 is a high performance dual PWM controller. It is designed to convert a widely ranged battery rail down to two independent output rails. The PWM operation of the

Contextual Info: June 1998 FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

power inverter schematic diagram ir2110

Abstract: IR2110 INVERTER SCHEMATIC 1n 4148 zener diode DIODE LN4148 full bridge ir2110 IR2110 full bridge inverter PWM IR2112 IRF540 pin configuration IR2110 INVERTER DIAGRAM 1n2074a Inverter IR2110
Contextual Info: Index AN-978 V. Int HV Floating MOS-Gate Driver ICs (HEXFET is a trademark of International Rectifier) Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD Bootstrap operation How to select the bootstrap components

Contextual Info: LTC3811 High Speed Dual, Multiphase Step-Down DC/DC Controller DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Fixed Frequency, Peak Current Mode Control ±0.5% Output Accuracy Over Temperature Optimized for Low VOUT Applications Up to 3.3V

TL3843 flyback schematic

Abstract: ccfl inverter schematic tl494 uc3854 sepic uc3845 lead acid battery charger LM337 LM317 pwm schematic inverter uc3844 TL3845 dc dc applications power inverter schematic diagram uc3846 UC3843 application note buck laptop TL494 CCFL inverter SCHEMATIC
Contextual Info: R E A L W O R L D S I G N A L P TM R O C E S S I N G Power Management Selection Guide 4Q 2004 TI Power Solutions: Power Behind Your Designs 2 ➔ Power Management Selection Guide Table of Contents Typical Power Applications 3 System Power and Plug-In Solutions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

TLF35584

Abstract: TLE9180 alternator regulator protocol BSS BTN8980 TC27x TLE9834 TC27x data spec alternator BSD TLE9832 Infineon TLE9180
Contextual Info: Ultimate Power – Perfect Control Vehicle Safety, Body and Powertrain Applications www.infineon.com/automotivepower For a comprehensive and reliable portfolio of products for automotive and other applications, look no further than the product range from Infineon. We have used our 40 years of experience

controller for PWM fan tl494

Abstract: am26c311 UCC1800 70W hid ballast LM358 laser driver TL3845 dc dc applications motor driver full bridge 10A with uc3638 uc1846 application notes tl3845 L293D H-bridge motor drive
Contextual Info: NINTH EDITION Analog Master Selection Guide October 2003 1996, 1997, 1999, 2000, 2001, 2002, 2003 Texas Instruments Incorporated IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

schematic diagram 48v dc convertor tl3845

Abstract: sg3524 spice model for pspice schematic diagram 48v ac regulator uc3842 schematic diagram inverter 12v to 24v 30a audio Amp. mosfet 1000 watt 24v dc motor speed control lm324 mini-LVDS and TFT-LCD Timing Controller sg3524 spice model UC1825 spice 500 watt power circuit diagram uc3825
Contextual Info: Selection Guide EIGHTH EDITION Analog/Mixed-Signal Products Designer’s Master Selection Guide August 2002 1996, 1997, 1999, 2000, 2001, 2002 Texas Instruments Incorporated IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications,