DT 7132 Search Results

cmos 555 timer

Abstract: ir2151 IR51H737 PD6061
Contextual Info: International S Rectifier Data Sheet No. PD-6.061A IR51H737 SELF-OSCILLATING HALF-BRIDGE Features Product Summary Floating channel designed for bootstrap operation Fully operational to +300V Tolerant to negative transient voltage dV/dt immune Undervoltage lockout

TB-09A

Abstract: sylogi
Contextual Info: \dt CMOS DUAL-PORT RAM 16K 2K x 8-BIT) IDT7132SA/LA IDT7142SA/L A integrated Device Technology, inc. FEATURES: • High-speed access —- Military: 25/35/55/100ns (max.) — Commercial: 25/35/55/100ns (max.) — Commercial: 20ns only in PLCC for 7132 • Low-power operation

IR2151

Contextual Info: International S Rectifier Data Sheet No. PD-6.034E IR2151 SELF-OSCILLATING HALF-BRIDGE DRIVER Product Summary Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Undervoltage lockout

Contextual Info: International [zor]Rectifier Provisional Data Sheet No. PD-6.043B IR2101 HIGH AND LOW SIDE DRIVER Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

IRLP2505

Abstract: IRFPE30
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRLP2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

IRL2505

Abstract: IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRL2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

IRFPE30

Abstract: IRLP3803 GD4000
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRLP3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

Contextual Info: International llQR]Rectifier Data Sheet No. PD-6.058C IR51H214 SELF-OSCILLATING HALF-BRIDGE Features • ■ ■ Product Summary Floating channel designed for bootstrap operation Fully operational to +250V Tolerant to negative transient voltage dV/dt immune

MOSFET 20V 120A

Abstract: IRFPE30 IRLP3803 ISD71A
Contextual Info: PD - _ IRLP3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description VDSS = 30V RDS on = 0.006Ω

Contextual Info: International S Rectifier Data Sheet No. PD-6.060C IR51H310 SELF-OSCILLATING HALF-BRIDGE Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Undervoltage lockout

IRF1010

Abstract: IRL2910
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1375 IRL2910 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

IRFPE30

Abstract: IRLP2505
Contextual Info: PD - _ IRLP2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description VDSS = 55V RDS on = 0.008Ω

AN-994

Abstract: IRF3205S IRF530S
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1304A IRF3205S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V

IRF540N

Abstract: MOSFET IRF540n IRF1010 irf1010 applications
Contextual Info: PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier

IRF1010N

Abstract: IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1278B IRF1010N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012 Ω ID = 72A Description

AN-994

Abstract: IRF530S IRFZ34NS
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1311 IRFZ34NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description VDSS = 55V RDS on = 0.040Ω

IR2151

Abstract: ir215
Contextual Info: International les Rectifier Data Sheet No. PD-6.034G IR2151 SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Undervoltage lockout

IRFP2410

Abstract: IRFPE30
Contextual Info: Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS = 100V RDS on = 0.025 Ω

IRFD420

Contextual Info: Previous Datasheet Index Next Data Sheet PD -9.1227 IRFD420 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 500V RDS on = 3.0Ω

IRF3205S

Abstract: AN-994 IRF530S
Contextual Info: PD - 9.1304A IRF3205S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.008Ω ID = 98A Description

Contextual Info: Preliminary Data Sheet PD - 9.1251 International S Rectifier IRFP2410 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • Repetitive Avalanche Rated • 175*0 Operating Temperature • Fast Switching

IRF1010

Abstract: IRFZ24N
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1354 IRFZ24N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.07Ω ID = 17A Description

IRF530N

Abstract: IRF530N applications IRF1010 irf1010 applications
Contextual Info: PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description Fifth Generation HEXFETs from International Rectifier

IRFP2410

Abstract: IRFPE30
Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling