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    DS110520 Search Results

    DS110520 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB


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    rf3931d96mmx133mmx0ds110520 PDF

    Contextual Info: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance


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    rf3934d96mmx457mmx0ds110520 PDF

    schematic diagram power amplifier free

    Abstract: GRM155R61A105
    Contextual Info: RFVA2017 RFVA2017Analog Controlled Variable Gain Amplifier ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mmx7mm VCTRL 8 Features Applications     Cellular, 3G and 4G Infrastructure WiBro, WiMax, LTE Microwave Radio High Linearity Power Control


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    rfva2017analogrfva2017ds110520schematic diagram power amplifier free+1grm155r61a105 PDF

    Contextual Info: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB


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    rf3932d96mmx192mmx0ds110520 PDF

    Contextual Info: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB


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    rf3932d96mmx192mmx0ds110520 PDF

    Contextual Info: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features  Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=14dB at 2GHz  48V Typical Packaged Performance


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    rf3933drf3933d9096mmx252mmx0+1ds110520 PDF

    46dBm

    Contextual Info: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB


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    rf3931d96mmx133mmx0ds110520+146dbm PDF

    RFMD HEMT GaN SiC

    Abstract: Gan hemt transistor RFMD LDMOS 90W
    Contextual Info: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz RF IN VG Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged


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    rf3933d90rf3933d96mmx252mmx0+4ds110520rfmd hemt gan sicgan hemt transistor rfmdldmos 90w PDF

    Contextual Info: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   RF IN VG Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged


    Original
    rf3934d96mmx457mmx0ds110520 PDF