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DS100264 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
54AC20 Abstract: 74AC AC20 E20A J14A Contextual Info: 54AC20 Dual 4-Input NAND Gate General Description The ’AC20 contains four 4-input NAND gates. n Outputs source/sink 24 mA n Standard Military Drawing SMD n ’AC20: 5962-87613 Features n ICC reduced by 50% Logic Symbol IEEE/IEC DS100264-1 Pin Names Description	Original	54AC20 DS100264-1 DS100264-3 DS100264-2 DS100264 54AC20 74AC AC20 E20A J14A	PDF
MMIX1G320N60B3 Abstract: 320N60B3 siemens ic igbt 300V 400A Contextual Info: Advance Technical Information MMIX1G320N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 400A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	MMIX1G320N60B3 IC110 320N60B3 MMIX1G320N60B3 siemens ic igbt 300V 400A	PDF
Contextual Info: 54AC20 54AC20 Dual 4-Input NAND Gate Literature Number: SNOS083 54AC20 Dual 4-Input NAND Gate General Description The ’AC20 contains four 4-input NAND gates. n Outputs source/sink 24 mA n Standard Military Drawing SMD n ’AC20: 5962-87613 Features n ICC reduced by 50%	Original	54AC20 54AC20 SNOS083 DS100264-1 DS100264-3 DS100264-2 DS100264	PDF
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT MMIX1G320N60B3 Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	MMIX1G320N60B3 IC110 320N60B3	PDF
Contextual Info: Preliminary Technical Information MMIX1G320N60B3 GenX3TM 600V IGBT Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	MMIX1G320N60B3 IC110 320N60B3	PDF