DS521-30EAA02
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JCET Group
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DFN WB0.6x0.3-2L Schottky barrier diode with 30 V peak reverse voltage, 100 mA average rectified current, low forward voltage of 0.60 V at 100 mA, and surface mount package for portable electronics applications. |
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DS521-30LED02
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JCET Group
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Schottky Barrier Diode, silicon epitaxial planar type, surface mounting, 30V reverse voltage, 200mA forward current, -40 to +125°C operating junction temperature range, suitable for high-speed switching in portable equipment. |
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DS521-30Y1
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JCET Group
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Surface mount Schottky barrier diode WBFBP-02C-A with 30 V repetitive peak reverse voltage, 200 mA average rectified current, low forward voltage of 0.55 V at 200 mA, and operating junction temperature from -40 to +125 ℃. |
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DS521-30
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SLKOR
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Small SMD Schottky Diode, VR 30V, IO 100mA, VF 0.40V @ 10mA, 0.60V @ 100mA, Tj -40~+125°C. |
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DS521-30EAA02