DS 470 53 Search Results

110VAC

Contextual Info: FEATURES PROFESSIONAL LED INDICATORS Ø8.1mm Mounting Each product will operate over a wide voltage input 534 SERIES range PACK QUANTITY = 10 PIECES Robust stainless steel housing Full internal potting to resist shock and vibration Sealed to IP67 True Bi-polar product for low voltage DC

CZ121

Contextual Info: FEATURES PROFESSIONAL LED INDICATORS Ø12.7mm Mounting Each product will operate over a wide voltage 531 SERIES input range PACK QUANTITY = 10 PIECES Bright nickel plated brass housing Full internal potting to resist shock and vibration Sealed to IP67 True Bi-polar product for low voltage DC

Contextual Info: FEATURES PROFESSIONAL LED INDICATORS Ø12.7mm Mounting Each product will operate over a wide voltage 538 SERIES input range PACK QUANTITY = 10 PIECES Robust stainless steel housing Full internal potting to resist shock and vibration Sealed to IP67 True Bi-polar product for low voltage DC

Hitachi DSA0076

Abstract: 1SV70 BB403M
Contextual Info: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

BB304M

Abstract: 1SV70 DSA003643
Contextual Info: BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

Hitachi DSA0096

Abstract: 1SV70 BB303C SC-82AB SOT343 C5
Contextual Info: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0096

Abstract: 1SV70 BB303M
Contextual Info: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0076

Abstract: 1SV70 BB303M
Contextual Info: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Fresnel lens

Abstract: 230vac to 12vdc 41193
Contextual Info: FEATURES PANEL INDICATOR LEDs - Ø8.0mm Mounting 411 Front panel replaceability SERIES PACK QUANTITY = 20 PIECES Must be used in conjunction with 907-000-00 panel socket. See datasheet DS084/04 Domed fresnel lens for wide angle viewing Sealed to IP40 Product illustrated 411-532-22 in the 907-000-00 panel

STE53NA50

Abstract: max5792
Contextual Info: STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STE53NA50 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.085 Ω 53 A TYPICAL RDS(on) = 0.075 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER

Hitachi DSA0076

Abstract: 1SV70 BB303C SOT343 C5 K-806
Contextual Info: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

colour code diode

Abstract: diode colour code 315-512-04 LED panel design Specification
Contextual Info: FEATURES PANEL INDICATOR LEDs - Ø6.35mm Mounting 315 SERIES Low profile lens styling PACK QUANTITY = 20 PIECES Flying lead terminations and low current versions available Sealed to IP40 Supplied complete with mounting hardware Product illustrated 315-532-21

E53NA50

Abstract: STE53NA50 schematic diagram UPS Ultrasonic welding circuit diagram E53NA50 ST Microelectronics
Contextual Info: STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST E53NA50 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.085 Ω 53 A TYPICAL RDS(on) = 0.075 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER

ca0005

Abstract: 800T-N YA3450N CA0015 lm 78 H 12 k
Contextual Info: ndex 58FCP . . 173 AR0001 . .85 AR0004 . .85

1SV70

Abstract: BB304C 4K60 K704 DSA003643
Contextual Info: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

1SV70

Abstract: BB304M DSA003732
Contextual Info: BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605C Z 4th. Edition August 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

Hitachi DSA0076

Abstract: 1SV70 BB404M
Contextual Info: BB404M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-717B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

Hitachi DSA002743

Contextual Info: BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

Hitachi DSA002743

Contextual Info: BB404M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-717A Z 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

1SV70

Abstract: BB304M
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier HITACHI ADE-208-605C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;

Contextual Info: SGS-THOMSON STE53NA50 RfflDeiE!<s [l[L[ie'ü’[Ki@RDD S$ N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STE53NA50 . . . . . . . . . dss 500 V R d S (o ii) < 0.085 Q. Id 53 A TYPICAL Ros(on) =0.075 £2 HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY

1SV70

Abstract: BB304C
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

CZ121

Abstract: LED 7000 mcd
Contextual Info: FEATURES PROFESSIONAL LED INDICATORS Ø12.7mm Mounting Each product will operate over a wide voltage 531 SERIES PACK QUANTITY = 10 PIECES input range Bright nickel plated brass housing Full internal potting to resist shock and vibration Sealed to IP67 True Bi-polar product for low voltage DC