DS 13 C Search Results

sick DS 50

Abstract: DOS-1205-G BEF-WN-DS60 infrared power led 3w DOL-1205-G05M SICK distance sensor led SICK distance sensor gra101 DOL-1205-G10M 60-P41111-S03
Contextual Info: T E C H N I C A L D E S C R I P T I O N TB_DS60_en.QXP 27.07.2002 13:56 Uhr Seite 1 DS 60 D i s t a n ce Sensor TB_DS60_en.QXP 27.07.2002 13:56 Uhr Seite 2 DS 60 Distance Sensor Application Field The DS 60 distance sensors operate according to the principle of time of flight

79CN10N

Abstract: 80CN10N IPB79CN10NG IPP80CN10NG TO252 IEC61249-2-21 IPD78CN10N IPP80CN10N D1804 78cn10n
Contextual Info: IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)

80cn10n

Abstract: IPD78CN10N IPP80CN10NG 78cn10n D1804 IPP80CN10N
Contextual Info: IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 78 mΩ ID 13 A • Very low on-resistance R DS(on)

900N15N

Abstract: BSZ900N15NS3 IEC61249-2-21 JESD22 BSZ900N15NS3 G J2820
Contextual Info: s BSZ900N15NS3 G OptiMOSTM3 Power-Transistor Product Summary Package Marking • N-channel, normal level V DS 150 V R DS on ,max 90 mΩ ID 13 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) PG-TSDSON-8 • 150 °C operating temperature

DM9000B

Abstract: FC-618SM DM9000BEP lfe8505 YCL-PH163112 LFE8563-DC lfe8563 PH163539 PH163112 SD10
Contextual Info: DM9000B Ethernet Controller with General Processor Interface DAVICOM Semiconductor, Inc. DM9000B Ethernet Controller With General Processor Interface DATA SHEET Final Version: DM9000B-DS-F01 February 1, 2008 Final Version: DM9000B-13-DS-F01 February 1, 2008

Contextual Info: DM9000B Ethernet Controller with General Processor Interface DAVICOM Semiconductor, Inc. DM9000B Ethernet Controller With General Processor Interface DATA SHEET Final Version: DM9000B-DS-F03 March 5, 2012 Final Version: DM9000B-13-DS-F03 March 5, 2012 1 DM9000B

DM9000B-13-DS-F02

Abstract: DM9000BEP FC-618SM lfe8505 hs9016 DM9000B lfe8563 LFE8583 delta lfe8505 YCL-PH163112
Contextual Info: DM9000B Ethernet Controller with General Processor Interface DAVICOM Semiconductor, Inc. DM9000B Ethernet Controller With General Processor Interface DATA SHEET Final Version: DM9000B-DS-F02 June 4, 2009 Final Version: DM9000B-13-DS-F02 June 4, 2009 1 DM9000B

ISS133

Abstract: M8305
Contextual Info: S T M8305 S amHop Microelectronics C orp. May,13 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID

STM8309

Abstract: M8309
Contextual Info: S T M8309 S amHop Microelectronics C orp. Oct.13, 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A R DS (ON) ( m W )

104N3S

Abstract: BSO104N03S JESD22 pdso8
Contextual Info: BSO104N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 9.7 mΩ ID 13 A 1 • Qualified according to JEDEC for target applications • N-channel

BSO094N03S

Abstract: JESD22
Contextual Info: BSO094N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 9.1 mΩ ID 13 A 1 • Qualified according to JEDEC for target applications • N-channel

Contextual Info: S T M7822 S amHop Microelectronics C orp. J ul.13 2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 6.5 @ V G S = 10V

MT 2800 N

Contextual Info: S T M4437 S amHop Microelectronics C orp. Aug.18 2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S ID -30V -10A R DS ON F E AT UR E S S uper high dense cell design for low R DS (ON ). ( m W ) Max 13 @ V G S = -20V R ugged and reliable.

D2640

Contextual Info: S T U/D2640NL S amHop Microelectronics C orp. May,13 2005 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 25@ V G S = 10V

SI5315-DS

Contextual Info: SI5315-DS / SI5315-DS B Semiconductor High Speed IRED Features • Colorless transparency lens type • φ5mm(T-13/4) all plastic mold type • Low power consumption • High power, High speed type Applications • Infrared remote control and free air transmission systems with low forward voltage and

Si5315

Abstract: SI5315-DS
Contextual Info: SI5315-DS/SI5315-DS B Semiconductor High Speed IRED Features • Colorless transparency lens type • φ5mm(T-13/4) all plastic mold type • Low power consumption • High power, High speed type Applications • Infrared remote control and free air transmission systems with low forward voltage and

F117

Abstract: F117A IEC61249-2-21 JESD22-A114 BSO130P03S d117-a marking f117
Contextual Info: BSO130P03S H OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 13 mΩ ID -11.7 A • Logic level PG-DSO-8 • 150°C operating temperature • qualified according JEDEC for target applications

104N3S

Abstract: BSO104N03S IEC61249-2-21 JESD22 BSO104
Contextual Info: BSO104N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 9.7 mΩ ID 13 A 1) • Qualified according to JEDEC for target applications • N-channel

Contextual Info: A REVISIONS Large Key 1 2 D B 3 REV DESCRIPTION DATE APPROVED B FIXED TOLERANCE PER ECO #12-14565 01/13/12 S SHAW C ADDED WEIGHT PER ECO 13-17201 10/7/13 DS C Sockets +4.00 120.00 -0.00 12 AWG Wire with 3 Conductor 12/3 Overall Nominal Wire Diameter: .595"

D140 Diode

Abstract: P-DSO-8 BSO130P03S marking F113 130P3S
Contextual Info: BSO130P03S OptiMOSTM-P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 13 mΩ ID -11.3 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter

130N03L

Abstract: 130n03 BSZ130N03LS IEC61249-2-21 JESD22
Contextual Info: BSZ130N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V DS 30 V • Fast switching MOSFET for SMPS R DS on ,max 13 mΩ • Optimized technology for DC/DC converters ID 35 A • Qualified according to JEDEC1) for target applications PG-TSDSON-8 • N-channel; Logic level

D225 Diode

Abstract: D225 Diode 100 IEC61249-2-21
Contextual Info: BSC130P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 13 mΩ ID -22.5 A • Logic level • 150°C operating temperature • Avalanche rated; RoHS compliant PG-TDSON-8 • Vgs=25V, specially suited for notebook applications

Contextual Info: DS 1314 DS 13 1 4 3V Nonvolatile C ontroller with Lithium Battery M onitor DALLAS SEMICONDUCTOR FEATURE PIN ASSIGNMENT • Converts CM OS SRAM into nonvolatile m emory • Unconditionally w rite -p ro te cts SRAM when out of tolerance V qq is • Autom atically switches to b attery-backup supply

marking code F113

Abstract: marking 113a BSO130P03S
Contextual Info: BSO130P03S OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 13 mΩ ID -11.3 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter