DRCF144E Search Results
DRCF144E Functional Equivalents (1)
The Functional Equivalents tab will give you options that are likely to match the same function of DRCF144E, but it may not fit your design.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| RN1104ACT | Toshiba America Electronic Components | Check for Price | Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
DRCF144E Price and Stock
ROHM Semiconductor DRCF144E0LDRCF144E0L |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DRCF144E0L | 180,000 | 4,630 |
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Buy Now | ||||||
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DRCF144E0L | 180,000 | 1 |
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DRCF144E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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DRCF144EContextual Info: DRCF144E Tentative Total pages page DRCF144E Silicon NPN epitaxial planar type For digital circuits Marking Symbol : NL Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open) |
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DRCF144E DRCF144E | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRAF144E Silicon PNP epitaxial planar type For digital circuits Complementary to DRCF144E DRA3144E in ML3 type package • Features Package Low collector-emitter saturation voltage VCE(sat) |
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2002/95/EC) DRAF144E DRCF144E DRA3144E DRAF144E0L | |
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
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respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 | |
MN864779
Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
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A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY | |
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Contextual Info: PT Tj Tstg Total power dissipation Junction temperature Storage temperature R1 / R2 Resistance ratio Conditions °C °C mW mA V V Unit VCE = 5 V, IC = 100 µA VCE = 0.2 V, IC = 5 mA IC = 10 mA, IB = 0.5 mA VCE = 10 V, IC = 5 mA VEB = 6 V, IC = 0 VCE = 50 V, IB = 0 |
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2002/95/EC) DRCF144E DRAF144E DRC3144E DRCF144E0L |