DRAN 120 Search Results

JIS-C5202

Abstract: 6000W 09 b 12
Contextual Info: TOKEN DR Round-Wirewound Power Resistors Round-Wirewound Power Resistors The Best Cost-Effective Power Resistor for High Energy Applications DR Preview Features: ● Fixed, adjustable, or tapped styles are available. ● Special terminals are available for unusual applications.

EV10AS150

Abstract: diode t25 4 A8 EBGA317 EV10AS150TP-EB EVX10AS150TP 10 GSPS ADC FR4 diode t25 4 A9
Contextual Info: EV10AS150 High Linearity ADC 10-bit 2.5 Gsps with 1:4 DMUX 4.5 GHz Full Power Bandwidth Datasheet Summary Main Features • ADC 10-bit Resolution • Up to 2.5 Gsps Sampling Rate • Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs Performance • Single Tone Performance in 1st Nyquist –1 dBFS

AT84AS004

Abstract: npn transistor w27 AT84AS004CTP DIODE A7N AT84AS004VTP AT84AS004TP-EB AOR 3000 AT84AS004-EB transistor a7n A7N transistor
Contextual Info: Features • • • • • • • 10-bit Resolution 2 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input LVDS Output Compatibility

AT84AS004

Abstract: npn transistor w27 AT84AS004VTPY
Contextual Info: AT84AS004 10-bit 2 Gsps ADC With1:4 DMUX Datasheet Features • • • • • • • 10-bit Resolution 2 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input

npn transistor w27

Abstract: AT84AS003 transistor a7n NF 840 AT84AS003VTP DIODE A7N AT84AS003-EB K27 npn AT84AS003CTP AT84AS004
Contextual Info: Features • • • • • • • 10-bit Resolution 1.5 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input LVDS Output Compatibility

npn transistor w27

Contextual Info: AT84AS003 10-bit 1.5 Gsps ADC With 1:4 DMUX Datasheet Features • • • • • • • 10-bit Resolution 1.5 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input

pj 67 diode

Abstract: a2702
Contextual Info: 2 S K 1 0 6 -0 1 SIPMOS8 FUJI POWER MOS-FET M FV^XIP I I IM-CHANNEL SILICON POWER MOS-FET IOutline Drawings • Features • High speed switching I0±05 • Low on-resistance 032 «f • No secondary breakdown • Low driving power • High voltage 1 • Gate

AT84AS004

Abstract: AT84AS004VTPY AT8AS004 AT84AS004TP-EB
Contextual Info: AT84AS004 10-bit 2 Gsps ADC With1:4 DMUX Datasheet Features • • • • • • • 10-bit Resolution 2 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock Input

2SK94

Abstract: 949-M 702 mosfet i502 STG-500
Contextual Info: 2SK949-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I S E R I E S I Outline Drawings • Features • High speed sw itching • Low o n-resistance i+.5±0.2 2 7±02 • No secondary breakd ow n • Low driving p o w er • High voltage

EV10AS150A

Abstract: EV10AS150 BDC 47 transistor EV10AS150AVTPY
Contextual Info: EV10AS150A High Linearity ADC 10-bit 2.5 Gsps with 1:4 DMUX 5 GHz Full Power Bandwidth Datasheet Features • • • • • • • • • • • • • ADC 10-bit Resolution Up to 2.5 Gsps Sampling Rate Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs

2SK1102-01M

Contextual Info: 2SK1102-01M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET FAP-n SERIES Outline Drawings • Features • High speed sw itching <*5±02 • Low on-resistance • No secondary b reakd ow n 2 7±02 • Low driving p o w e r • High voltage

2sk1018

Abstract: ups electrical symbols 600 va ups circuit SCHEMA SCHEMA 2sk1018 SIPMOS 2SK1021 T0220AB N channel power mos fet sot schematic symbols UPS
Contextual Info: 2SK1018 S IP M 0 S * * ± '< 7 -M 0 S -F E T * ^ < 7 - M 0 S -FE T F-II N-CHANNEL SILICON PO W ER M O SFET SERIES : Features •* 4 : Outline Drawings Kd' ÄV. ' •* High speed switching C5-« L ow on-resisiance • •ff iS * No secondary breakdown Low d riving power

EV10AS150

Abstract: 1Vp55 EV10AS150A 3-D Matrix Europe SAS
Contextual Info: EV10AS150A High Linearity ADC 10-bit 2.5 Gsps with 1:4 DMUX 5 GHz Full Power Bandwidth Datasheet Features • • • • • • • • • • • • • ADC 10-bit Resolution Up to 2.5 Gsps Sampling Rate Selectable 1:4 or 1:2 Demultiplexed Digital LVDS Outputs

C10DRA

Abstract: pa9t m 7811 C13DRA C18DRA
Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS ECO. NO DESCRIPTION DATE BY A 1249 INITIAL RELEASE 01-19-07 MNH B 1397 UPDATE/CORRECT PCB LAYOUT 6/21/2007 MNH C 1680 ADDED 'B' MOUNTING INFORMATION 5/6/2008 MNH E D B A F E REV. 2X .125 3.18 .075 1.91 CARDSLOT .100 2.54 TYP. E C

C08DRA

Abstract: C18DRA C52D C30DRA 1 MEGA OHM C25D
Contextual Info: 8 7 4 5 6 1 2 3 REVISIONS ECO. NO DESCRIPTION DATE BY A 1249 INITIAL RELEASE 01-19-07 MNH B 1397 UPDATE/CORRECT PCB LAYOUT 6/21/2007 MNH E D B A F E REV. 2X .125 3.18 F .075 1.91 CARDSLOT .100 2.54 TYP. E C A .125±.025 3.18±0.64 TRIM TAILS F .186 4.72 .431 10.95

irf710 "spice model"

Abstract: IRF710 IRF713 AN-975 1RF713 Diode Gfg 45 IRF712
Contextual Info: HE 0 I T- 3 T-// 4055455 0000520 7 | INTERNATIONAL Data Sheet No. PD-9.327I R EC TIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* IRF710 HEXFET TRANSISTO RS i R F T n n & Zìi N-CHANNEL IRF712 IRF713 Product Summary 400 Volt, 3.6 Ohm HEXFET

MM1763

Abstract: dvd ic diagram
Contextual Info: 2-SCART Compatible AV Switch for DVD Recorders for Europe MM1763 MITSUMI 2-SCART Compatible AV Switch for DVD Recorders for Europe Monolithic IC MM1763 Outline This IC is a one-chip IC integrating an I2C BUS controlled AV switch with 4 inputs and 3 outputs with a 6channel video driver with a built-in LPF. 2 outputs among 3 outputs of the AV switch are 75Ω drivers, which

Contextual Info: OM7500SM SURFACE MOUNT DUAL POSITIVE AND NEGATIVE FIXED VOLTAGE REGULATORS Dual 5V. 12V a n d 15V. 1.5 A m p F ix e d V o l ta g e R e g u l a t o r s In I s o l a t e d H e r m e t i c Surface M o unt Package FEATURES Positive And Negative Regulators In One Package

Contextual Info: 2-SCART Compatible AV Switch for DVD Recorders for Europe MM1764 MITSUMI 2-SCART Compatible AV Switch for DVD Recorders for Europe Monolithic IC MM1764 Outline This IC is a one-chip IC integrating an I2C BUS controlled AV switch with 6 inputs and 3 outputs with a 6channel video driver with a built-in LPF. 2 outputs among 3 outputs of the AV switch are 75Ω drivers, which

AT84AS003

Abstract: 2600 corning bsc physics books AT84AS003CTP AT84AS003TP-EB AT84AS003VTP AT84XAS003TP
Contextual Info: Features • • • • • • • 10-bit Resolution 1.5 Gsps Sampling Rate Selectable 1:2 or 1:4 Demultiplexed Output 500 mVpp Differential 100Ω or Single-ended 50Ω Analog Input 100Ω Differential or Single-ended 50Ω Clock input LVDS Output Compatibility

FDPF*10N60NZ

Abstract: FDPF10N60NZ FDP10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power
Contextual Info: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

FR4 epoxy dielectric constant 4.4

Abstract: AT84AS004 FR4 epoxy dielectric constant 4.2 FR4 dielectric constant 4.4 thickness 1.6 AT84AS004-EB HP8665 FR4 epoxy dielectric constant 3.2 AT84AS004VTP HP16500C RO4003
Contextual Info: AT84AS004-EB Evaluation Board . User Guide Table of Contents Section 1 Introduction . 1-1

AT84AS003

Abstract: FR4 epoxy dielectric constant 4.4 digital rf delay line 4.3 GHz 142-0701-851 AT84AS003-EB RO4003 100 watt FR4 epoxy dielectric constant 4.2 FR4 epoxy dielectric AT84AS0003-EB
Contextual Info: AT84AS003-EB Evaluation Board . User Guide Table of Contents Section 1 Introduction . 1-1

Contextual Info: UniFET-IITM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2.25A • Low Gate Charge ( Typ. 10nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar