DRAM 1M X 8 Search Results

333z

Abstract: 333z capacitor 00A80
Contextual Info: STI91OOOA 30-PIN SIMMS 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000A is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91 OOOA consist of two CMOS 1M x 4 DRAMs in 20-pin SOJ package and one CMOS 1M x 1 DRAM in 20-pin SOJ package

Contextual Info: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS

A43L2616A

Contextual Info: A43L2616A Preliminary 1M X 16 Bit X 4 Banks Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 30, 2004 Preliminary November, 2004, Version 0.0

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.

Contextual Info: UG6M13601PTCT-6 Data sheets can be downloaded at www.unigen.com 4M Bytes 1M x 36 bits FPM MODE DRAM MODULE FPM Mode 72 Pin SIMM w/Parity based on 2 pcs 1M x 16 & 4 pcs 1M x 1 DRAM with LVTTL, 1K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM

GM71C4400BJ

Abstract: GM71C4400 GM71C1000 GM71C4 GMM791000
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM791000BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit DRAM (GM71C1000BJ, lM x l) in 20 pin SOJ package. The GMM791000BNS is a

Contextual Info: UG6M13601PBCT-6 Data sheets can be downloaded at www.unigen.com 4M Bytes 1M x 36 bits FPM MODE DRAM MODULE FPM Mode 72 Pin SIMM w/Parity based on 2 pcs 1M x 16 & 4 pcs 1M x 1 DRAM with LVTTL, 1K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM

A43P26161

Abstract: A43P26161V
Contextual Info: A43P26161 Preliminary 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Modify to 133MHz & 105MHz

A43L1616

Abstract: A43L1616V
Contextual Info: A43L1616 Preliminary 1M X 16 Bit X 2 Banks Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 2, 2005 Preliminary August, 2005, Version 0.0 AMIC Technology, Corp.

Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S641632D CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

i3 processor

Abstract: A43L2632
Contextual Info: A43L2632 Preliminary 1M X 32 Bit X 4 Banks Synchronous DRAM Document Title 1M X 32 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue January 13, 2005 Preliminary January, 2005, Version 0.0 AMIC Technology, Corp.

K4S641632E-TC75

Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.2 Sept. 2001 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

Contextual Info: HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8 -b it CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.

A43P26161

Abstract: A43P26161V
Contextual Info: A43P26161 Preliminary 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Modify to 133MHz & 105MHz

A43E26161

Contextual Info: A43E26161 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Final version release December 15, 2004

A43L1616

Abstract: A43L1616V
Contextual Info: A43L1616 Preliminary 1M X 16 Bit X 2 Banks Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue August 2, 2005 Preliminary 0.1 Add 54B Pb-Free CSP package type March 15, 2007 0.2

A43E16161

Abstract: A43E16161V
Contextual Info: A43E16161 Preliminary 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 2, 2005 Preliminary August, 2005, Version 0.0

A43E16161

Abstract: A43E16161V
Contextual Info: A43E16161 Preliminary 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue August 2, 2005 Preliminary 0.1 Add 54B Pb-Free CSP package type

Contextual Info: UG41W641 4 6GSG Data sheets can be downloaded at www.unigen.com 8M Bytes (1M x 64 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SODIMM based on 4 pcs 1M x 16 DRAM with LVTTL, 1K & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM FEATURES

Contextual Info: DRAM MODULE KMM5321204AW/AWG KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1M x 16 DRAM G ENERAL DESCRIPTIO N FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The • Part Identification - KMM5321204AW 1024 cycles/16 ms Ref, SOJ, Solder

Contextual Info: A43E26162 Preliminary 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue June 23, 2005 Preliminary 0.1 Modify tSS from 3ns to 2ns July 11, 2005

A43L2616

Abstract: A43L2616V
Contextual Info: A43L2616 1M X 16 Bit X 4 Banks Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date 0.0 Initial issue August 9, 2001 1.0 Add -V grade November 26,2001 2.0 Add -5.5 spec January 4,2002 3.0 Add Full Page Mode

A43L2616

Abstract: A43L2616V 1M x 16-Bit x 4 Banks synchronous DRAM
Contextual Info: A43L2616 1M X 16 Bit X 4 Banks Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date 0.0 Initial issue August 9, 2001 1.0 Add -V grade November 26,2001 2.0 Add -5.5 spec January 4,2002 3.0 Add Full Page Mode