DRAM 1M X 8 Search Results

A43L2616A

Contextual Info: A43L2616A Preliminary 1M X 16 Bit X 4 Banks Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 30, 2004 Preliminary November, 2004, Version 0.0

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.

Contextual Info: UG6M13601PTCT-6 Data sheets can be downloaded at www.unigen.com 4M Bytes 1M x 36 bits FPM MODE DRAM MODULE FPM Mode 72 Pin SIMM w/Parity based on 2 pcs 1M x 16 & 4 pcs 1M x 1 DRAM with LVTTL, 1K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM

GM71C4400BJ

Abstract: GM71C4400 GM71C1000 GM71C4 GMM791000
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM791000BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit DRAM (GM71C1000BJ, lM x l) in 20 pin SOJ package. The GMM791000BNS is a

A43P26161

Abstract: A43P26161V
Contextual Info: A43P26161 Preliminary 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Modify to 133MHz & 105MHz

A43L1616

Abstract: A43L1616V
Contextual Info: A43L1616 Preliminary 1M X 16 Bit X 2 Banks Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 2, 2005 Preliminary August, 2005, Version 0.0 AMIC Technology, Corp.

Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S641632D CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

i3 processor

Abstract: A43L2632
Contextual Info: A43L2632 Preliminary 1M X 32 Bit X 4 Banks Synchronous DRAM Document Title 1M X 32 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue January 13, 2005 Preliminary January, 2005, Version 0.0 AMIC Technology, Corp.

CKE 2009

Abstract: A43E26161
Contextual Info: A43E26161 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Final version release December 15, 2004

A43P26161

Abstract: A43P26161V
Contextual Info: A43P26161 Preliminary 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Modify to 133MHz & 105MHz

A43E26161

Contextual Info: A43E26161 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Final version release December 15, 2004

A43L1616

Abstract: A43L1616V
Contextual Info: A43L1616 Preliminary 1M X 16 Bit X 2 Banks Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue August 2, 2005 Preliminary 0.1 Add 54B Pb-Free CSP package type March 15, 2007 0.2

A43E16161

Abstract: A43E16161V
Contextual Info: A43E16161 Preliminary 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 2, 2005 Preliminary August, 2005, Version 0.0

Contextual Info: UG41W641 4 6GSG Data sheets can be downloaded at www.unigen.com 8M Bytes (1M x 64 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SODIMM based on 4 pcs 1M x 16 DRAM with LVTTL, 1K & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM FEATURES

A43L2616

Abstract: A43L2616V
Contextual Info: A43L2616 1M X 16 Bit X 4 Banks Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date 0.0 Initial issue August 9, 2001 1.0 Add -V grade November 26,2001 2.0 Add -5.5 spec January 4,2002 3.0 Add Full Page Mode

A43L2616

Abstract: A43L2616V 1M x 16-Bit x 4 Banks synchronous DRAM
Contextual Info: A43L2616 1M X 16 Bit X 4 Banks Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date 0.0 Initial issue August 9, 2001 1.0 Add -V grade November 26,2001 2.0 Add -5.5 spec January 4,2002 3.0 Add Full Page Mode

A43L2616V-7F

Abstract: A43L2616 A43L2616V
Contextual Info: A43L2616 1M X 16 Bit X 4 Banks Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date 0.0 Initial issue August 9, 2001 1.0 Add -V grade November 26,2001 2.0 Add -5.5 spec January 4,2002 3.0 Add Full Page Mode

Contextual Info: A43L2616B 1M X 16 Bit X 4 Banks Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue August 24, 2006 Preliminary 0.1 Change ICC1 to 70mA February 14, 2007 Rev. No. Change ICC6 to 1.5mA

Contextual Info: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.

km416c1204a

Abstract: km416c1204aj
Contextual Info: DRAM MODULE KMM5321204AW/AWG KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification - KMM5321204AW {1024 cycles/16 ms Ref, SOJ, Solder

HY5V66EF6P

Abstract: HY5V66EF6
Contextual Info: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.01 History Initial Draft Draft Date Remark Dec. 2004 Preliminary June. 2005 Preliminary 1. Editorial chage 0.80Typ -> 0.45 +/-0.05 page12, Ball Dimension

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED2M361JSQW-XX FAST PAGE MODE, 2M X 36 SIMM Using 1M X 16 DRAM and 1M X 4 QUAD CAS DRAM, 1K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED2M361JSQW-XX is a 2M bit X 36 Dynamic RAM high density memory module.

Contextual Info: HYUNDAI HYM532100 Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532100 is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400 in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.2 2pF decoupling capacitor Is mounted for each DRAM.