DRAM 1M X 8 Search Results

A953

Contextual Info: DYNAMIC RAM OUTLINE The DRAM series is made up of dynamic random access memory. Memory capacity is from 1M Bytes to 8M Bytes. VARIATION Part Number Memory Size DWE100CMD0 DWE400CMD0 DWE800CMD0 Description 1M Bytes 4M Bytes 8M Bytes 1M X 512K X 16 bits + 2 Parity DRAM CARD

Contextual Info: Preliminary HY5V66DF6 P Series 4Banks x 1M x 16bits Synchronous DRAM Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jan. 2004 Preliminary 0.2 1. Change Erratum (Page03 Ball Configuration)

Contextual Info: Preliminary HY5V66DF6 P Series 4Banks x 1M x 16bits Synchronous DRAM Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jan. 2004 Preliminary 0.2 1. Change Erratum (Page03 Ball Configuration)

333z

Abstract: 333z capacitor 00A80
Contextual Info: STI91OOOA 30-PIN SIMMS 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000A is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91 OOOA consist of two CMOS 1M x 4 DRAMs in 20-pin SOJ package and one CMOS 1M x 1 DRAM in 20-pin SOJ package

RDRAM cross reference

Abstract: D488170 D488170L UPD488170LG6 D488170LG6-A53 D488170LG6-A N24-N2 PD488170L d488170lg6 NEC RDRAM 36
Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿ P D 4 8 8 1 7 0 L 18M-BIT Base Rambus DRAM 1M-WORD X 9-BIT X 2-BANK * D escription The 18-Megabit Rambus DRAM RDRAM is an extremely-high-speed CMOS DRAM organized as 1M

Contextual Info: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS

A43L2616A

Contextual Info: A43L2616A Preliminary 1M X 16 Bit X 4 Banks Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 30, 2004 Preliminary November, 2004, Version 0.0

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor Is mounted for each DRAM.

U351

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581000A Series 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. Q.22fiF decoupling capacitor Is mounted for each DRAM.

HY531000

Abstract: HYM581000 GO2S
Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2fyF decoupling capacitor is mounted fo r each DRAM.

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.

K4S641632C

Abstract: circuit diagram for auto on off
Contextual Info: K4S641632C CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Jun. 1999 K4S641632C CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

Contextual Info: A43P26161 Preliminary 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Modify to 133MHz & 105MHz

Contextual Info: A43E26161 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Final version release December 15, 2004

GM71C4400BJ

Abstract: GM71C4400 GM71C1000 GM71C4 GMM791000
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM791000BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit DRAM (GM71C1000BJ, lM x l) in 20 pin SOJ package. The GMM791000BNS is a

Contextual Info: UG6M13601PBCT-6 Data sheets can be downloaded at www.unigen.com 4M Bytes 1M x 36 bits FPM MODE DRAM MODULE FPM Mode 72 Pin SIMM w/Parity based on 2 pcs 1M x 16 & 4 pcs 1M x 1 DRAM with LVTTL, 1K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM

A43P26161

Abstract: A43P26161V
Contextual Info: A43P26161 Preliminary 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Modify to 133MHz & 105MHz

Contextual Info: A43E26161 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Final version release December 15, 2004

Contextual Info: A43P26161 Preliminary 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Modify to 133MHz & 105MHz

Contextual Info: A43E26161 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue September 13, 2004 Preliminary 1.0 Final version release December 15, 2004

A43L1616

Abstract: A43L1616V
Contextual Info: A43L1616 Preliminary 1M X 16 Bit X 2 Banks Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 2, 2005 Preliminary August, 2005, Version 0.0 AMIC Technology, Corp.

Contextual Info: K4S641632E CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec. 2000 K4S641632E CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

Contextual Info: K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S641632D CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM

i3 processor

Abstract: A43L2632
Contextual Info: A43L2632 Preliminary 1M X 32 Bit X 4 Banks Synchronous DRAM Document Title 1M X 32 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue January 13, 2005 Preliminary January, 2005, Version 0.0 AMIC Technology, Corp.