ELPIDA
Abstract: Elpida Memory NEC-Hitachi Memory working principle scanner TSOP II elpida Yaesu sagami DRAM elpida
Text: World's First 0.13 µm 256 Mb DRAM Hidemori Inukai Corporate Name Elpida Memory, Inc. Head , , Elpida Memory will start sample shipment of this DRAM from the first quarter of 2001 and volume , encompassing existing NEC and Hitachi DRAM products, as well those developed in-house. In addition to Elpida , Single Chip Design In the new chip design, Elpida Memory has combined DDR synchronous DRAM , which will , Synchronous DRAM ) Elpida Memory
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66-pin
ELPIDA
Elpida Memory
NEC-Hitachi Memory
working principle scanner
TSOP II elpida
Yaesu
sagami
DRAM elpida
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2000 - powerchip DDR3
Abstract: powerchip sdram POWERCHIP DDR3 DRAM layout powertech ELPIDA mobile DDR kingston ddr3 memory Tera Probe Banner Engineering kingston DDR2 800
Text: ( Elpida ) began in December 1999 as Japan's only specialized DRAM maker, the Company has pioneered the use , semiconductor makers. " Elpida " also represents the idea that we are a Japanese DRAM maker that intends to , lead the DRAM industry Yukio Sakamoto, Elpida 's President and CEO company's history. One of our , response, Elpida is leveraging its advanced world-class DRAM technology to develop products that achieve , the DRAM industry is intensifying on a global scale but Elpida is well on its way to achieving its
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E0001EC0
powerchip DDR3
powerchip sdram
POWERCHIP
DDR3 DRAM layout
powertech
ELPIDA mobile DDR
kingston ddr3 memory
Tera Probe
Banner Engineering
kingston DDR2 800
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2009 - EDE2116ACBG
Abstract: EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
Text: .9.0) 11 DRAM Selection Guide Mobile RAM is a trademark of Elpida Memory, Inc. Rambus and the , SELECTION GUIDE DRAM Selection Guide Document No. E1454E90 (Ver.9.0) Date Published September 2009 (K) Japan Printed in Japan URL: http://www.elpida.com © Elpida Memory, Inc. 2009 DRAM Selection Guide CONTENTS 1. DDR3 SDRAM , .10 17. XDRTM DRAM
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E1454E90
240-pin
M01E0706
EDE2116ACBG
EDE2116ACBG-1J-F
EDE1116AGBG-1J-F
DDR3-800D
ELPIDA lpddr
DDR3-800E
EDE1116AGBG
EDJ1108DBSE
DDR3 layout
EDE1032AGBG
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2004 - PC2-5300F
Abstract: DDR2-533 DDR2-667 MEMORY pc2 ELPIDA DDR2 5300F DRAM elpida elpida module
Text: unprecedented speed up to 4.8Gbps data rate. Elpida Memory began sample shipment in December 2004 and continues , from the DRAM on the Point-to-Point architecture (Serial connection) module are buffered at the high-speed Advanced Memory DRAM Memory Controller DRAM and the AMB. DRAM DRAM DRAM DRAM operation, with a much shorter signal path between the DRAM DRAM DRAM secure the DRAM timing margins during high-speed DRAM DRAM Buffer (AMB) chip located on the DIMM. This helps to DRAM
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PC2-5300F
DDR2-667
667Mbps)
PC2-4200F
DDR2-533
533Mbps)
512Mb
512MB
PC2-5300F
DDR2-533
DDR2-667
MEMORY pc2
ELPIDA DDR2
5300F
DRAM elpida
elpida module
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2004 - PC2-5300F
Abstract: ELPIDA sdram dram DDR2-667 dram DRAM elpida elpida module
Text: faster bus speeds. Elpida Memory will continue to expand its FB-DIMM lineup and provide DRAM products , , address, command and data - to and from the DRAM on the module are buffered FB-DIMM Point-to-Point , . This helps to secure the DRAM timing margins DRAM DRAM DRAM during high-speed operation with a much shorter signal path DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM AMB between the DRAM and the AMB. The FB-DIMM also adopts a Point-to-Point connection on the
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512MB
240-pin
512MB
PC2-5300F
DDR2-667
667Mbps)
E0632E80
PC2-5300F
ELPIDA
sdram dram
DDR2-667
dram
DRAM elpida
elpida module
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2009 - fire hydrant
Abstract: powerchip DDR3 wiring diagram design for sewer treatment plan Powerchip led plant grow light POWERCHIP DDR2 64*8 Powerchip dram solar power plant ELPIDA DDR3 internal combustion engine cogeneration
Text: Elpida Memory, Inc. aims to become the world's No. 1 DRAM company that contributes to the digital , efficient water use DRAM operating efficiency* forecast Elpida conducts environmental activities from , to offer higher-speed characteristics (high data bandwidth). Elpida Memory DRAM designed for use in , Consumer Division DRAM Business Unit Elpida Memory, Inc. JEITA: Japan Electronics and Information , N M EN T Elpida Memory Environmental Report 2009 Elpida Memory is working
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81-42-775-7455Fax:
E0778E50
fire hydrant
powerchip DDR3
wiring diagram design for sewer treatment plan
Powerchip
led plant grow light
POWERCHIP DDR2 64*8
Powerchip dram
solar power plant
ELPIDA DDR3
internal combustion engine cogeneration
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2005 - elpida DDR2 routing
Abstract: E0678E10 ELPIDA DDR User ELPIDA DDR technical note elpida ELPIDA DDR manual Elpida Cross Reference ELPIDA SDRAM User Manual
Text: A comparison between DDR2 SDRAM, DDR SDRAM, and SDR SDRAM with a DRAM core operating frequency of , 2005 (K) Japan Printed in Japan URL: http://www.elpida.com © Elpida Memory, Inc. 2005 DDR2 SDRAM TECHNOLOGY DRAM core frequency 133MHz DDR2 SDRAM Clock frequency 266MHz Memory Cell Array I/O Buffer DRAM core frequency 133MHz DDR SDRAM Clock frequency 133MHz Memory Cell Array Data bus speed 266Mbps I/O Buffer DRAM core frequency 133MHz SDR
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M01E0107
E0678E10
elpida DDR2 routing
E0678E10
ELPIDA DDR User
ELPIDA DDR technical note
elpida
ELPIDA DDR manual
Elpida Cross Reference
ELPIDA SDRAM User Manual
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2005 - sdram pin voltage
Abstract: DRAM elpida elpida SDRAM
Text: exchanging information in many ways. To help this transition, Elpida Memory offers a diverse lineup of DRAM architectures for digital consumer devices including SDRAM, DDR SDRAM, DDR2 SDRAM and XDRTM DRAM . Digital , , Inc. 2005-2006 http://www.elpida.com Digital Consumer DRAM Product Line Up Elpida Memory , Digital Consumer DRAM DRAM Solutions for All Digital Consumer Device Needs In the transition from , 's digital still cameras. Elpida Memory supports these markets with an extensive lineup of memory
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210mA
140mA
256Mb
512Mb
E0652E40
sdram pin voltage
DRAM elpida
elpida SDRAM
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2006 - pc2-5300
Abstract: elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE
Text: SELECTION GUIDE DRAM Selection Guide Document No. E0853E70 (Ver.7.0) Date Published July 2006 (K) Japan Printed in Japan URL: http://www.elpida.com © Elpida Memory, Inc. 2006 DRAM , .8 10. XDR DRAM , ) .9 Selection Guide E0853E70 (Ver.7.0) 3 DRAM Selection Guide 1. DDR2 SDRAM Density , Elpida sales to check the production status 2. Part Number EDE1104AASE EDE1104ABSE EDE1108AASE
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E0853E70
240-pin
200-pin
M01E0107
pc2-5300
elpida 1gb pc2
ECL120ACECN
ELPIDA DDR2
PC2-3200
ELPIDA
68-FBGA
Elpida DDR2 SDRAM component
EDE1104ABSE
EDE1108AASE
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2004 - PC2-6400F
Abstract: pc2 4200F PC2-5300F DRAM elpida dram module elpida memory ddr2
Text: unprecedented speed up to 4.8Gbps data rate. Elpida Memory began sample shipment in December 2004 and continues , DIMM In the new FB-DIMM, all signals - clock, address, command and data - to and from the DRAM on , helps to secure the DRAM timing margins during high-speed operation, with a much shorter signal path between the DRAM and the AMB. The FB-DIMM also adopts a Point-to-Point connection on the bus between the , Controller Memory Controller DRAM DRAM DRAM DRAM AMB DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM AMB DRAM DRAM
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240-pin
512Mb
PC2-6400F*
PC2-5300F
PC2-4200F
DDR2-800
800Mbps)
PC2-6400F
pc2 4200F
DRAM elpida
dram module
elpida memory ddr2
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2004 - ELPIDA DDR3
Abstract: "DDR3 SDRAM" Elpida EDJ1108BBSE DDR3 DIMM elpida ELPIDA ELPIDA mobile DDR DDR3 DDR3 pins ddr3 tsop ddr3 datasheet
Text: N/A N/A N/A N/A N/A TSOP II Notes 1. ZQ Calibration: Calibrate DRAM ODT and Ron values over PVT (Process, Voltage, temperature). External resistor (240ohm±1%) is inserted between DRAM ZQ pin , Driver Calibration): Calibrate DRAM Ron over PVT. External device connected to DRAM performs impedance , flight time difference. 2Gbps High-Speed DDR3 SDRAM Elpida Memory has developed a top-tier power , , in response to demand for next-generation low-power products Elpida 's new device can operate at
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800/1066/1333/1600Mbps
400/533/667/800MHz)
400/533/667/800Mbps
200/266/333/400MHz)
DDR3-1600/1333
EBJ21UE8BASA-AE-E
DDR3-1066)
EBJ21UE8BASA-8C-E
DDR3-800)
EBJ11UE6BASA-AE-E
ELPIDA DDR3
"DDR3 SDRAM"
Elpida EDJ1108BBSE
DDR3 DIMM elpida
ELPIDA
ELPIDA mobile DDR
DDR3
DDR3 pins
ddr3 tsop
ddr3 datasheet
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2005 - DDR2 x32
Abstract: ELPIDA DDR3 DDR3 DRAM layout ddr3 sdram chip datasheets 128mb 512MB xdr elpida DRAM elpida ELPIDA DDR2
Text: exchanging information in many ways. To help this transition, Elpida Memory offers a diverse lineup of DRAM architectures for digital consumer devices including SDRAM, DDR SDRAM, DDR2 SDRAM and XDRTM DRAM . Digital , . Elpida 's XDR DRAM realizes the high data transfer rates required for graphic processing, making it , Digital Consumer DRAM Product Line Up Elpida Memory's expanded line of Digital Consumer DRAM meets the , Digital Consumer DRAM DRAM Solutions for All Digital Consumer Device Needs In the transition from
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x32-bit
256Mb
x16-bit
229mA
258mA
172mA
256Mb
512Mb
E0652E90
DDR2 x32
ELPIDA DDR3
DDR3 DRAM layout
ddr3 sdram chip datasheets 128mb
512MB
xdr elpida
DRAM elpida
ELPIDA DDR2
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2004 - Not Available
Abstract: No abstract text available
Text: unprecedented speed up to 4.8Gbps data rate. Elpida Memory began sample shipment in December 2004 and continues , and from the DRAM on the Point-to-Point architecture (Serial connection) module are buffered at the high-speed Advanced Memory DRAM Memory Controller DRAM and the AMB. DRAM DRAM DRAM DRAM operation, with a much shorter signal path between the DRAM DRAM DRAM secure the DRAM timing margins during high-speed DRAM DRAM Buffer (AMB) chip located on the DIMM
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DDR2-667
667Mbps)
PC2-4200F
PC2-5300F
DDR2-533
533Mbps)
512Mb
512MB
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2010 - EDE2116ACBG
Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
Text: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 (Ver.3.0) Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com © Elpida Memory, Inc. 2010 DRAM , (Ver.3.0) 9 DRAM Selection Guide Mobile RAM is a trademark of Elpida Memory, Inc. Rambus and , ) .7 13. XDRTM DRAM , .8 Selection Guide E1610E30 (Ver.3.0) 3 DRAM Selection Guide 1. DDR3 SDRAM Density
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E1610E30
240-pin
M01E0706
EDE2116ACBG
EDJ2116DASE
ECM220ACBCN
ELPIDA EDJ2116DASE
EDE1116AGBG
EDE2116ACBG-1J-F
GDDR5
EDJ1108DBSE-GN-F
ELPIDA lpddr
EDE1116AGBG-1J-F
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2004 - Elpida LPDDR2 Memory
Abstract: lpddr2 datasheet elpida lpddr2 lpddr2 ELPIDA mobile dram LPDDR2 ddr2 ram Jedec lpddr2 lpddr2 mcp ELPIDA mobile DDR LPDDR2 1Gb Memory
Text: Elpida Memory's Mobile Technology As cellular phones now offer an increasing number of functions, demands for high-speed, high-density, low-power DRAM are also increasing. New functions for mobile , mounting technology, Elpida Memory has developed Mobile Low power consumption RAM, which , of 2.5V operation of 1.8V. Mobile RAM is synchronous DRAM that features new Synchronous , Synchronous operation SDRAM Mobile RAM technology for mobile devices. Elpida Memory's Mobile RAM is
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Elpida LPDDR2 Memory
lpddr2 datasheet
elpida lpddr2
lpddr2
ELPIDA mobile dram LPDDR2
ddr2 ram
Jedec lpddr2
lpddr2 mcp
ELPIDA mobile DDR
LPDDR2 1Gb Memory
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2004 - ELPIDA mobile DDR
Abstract: elpida MCP market Elpida Memory E0566E50 circuit mobile phone Elpida mobile DRAM elpida
Text: design-in using its system technology know-how as a DRAM manufacturer. Elpida 's Mobile RAM products are , Mobile RAM TM Elpida Memory's Mobile Technology As cellular phones now offer an increasing number of functions, demands for high-speed, high-density, low-power DRAM are also increasing. Using , technology, and advanced mounting technology, Elpida Memory has developed Mobile RAM, which simultaneously , operation of 1.8V. Low power voltage of 2.5V Mobile RAM is synchronous DRAM that features new
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512Mb,
E0566E50
ELPIDA mobile DDR
elpida
MCP market
Elpida Memory
E0566E50
circuit mobile phone
Elpida mobile
DRAM elpida
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2008 - E1108ACBG-8E-E
Abstract: M393T6450FZ3-CCC E1104ACSE-6E-E SROMBSAS18E A222G HYB18T1G800C2F-3S E1108AB-6E-E HYB18T1G400C2F-3S M393T6553CZ3-CCC M393T2950CZ3-CCC
Text: 12I HYB18T256400AF5 rev TRS31261X A DRAM Vendor Elpida Qimonda Elpida Qimonda PCB Part , -8E-E rev GI C DRAM Vendor Samsung Elpida Samsung Qimonda Qimonda Qimonda Samsung Nanya Nanya , 1 Elpida DRAM Rank Organization (64Mbx8)*18 (128Mx8)*9 (128Mbx4)*18 (128Mbx4)*18 , E1108AB-6E-E rev B Elpida MT47H128M8HQ-3 rev E E5104AHSE-6E-E rev H Micron Elpida DRAM , either single rank or dual rank depending on the number of DRAM devices that are used on any one DIMM. A
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SE8500HW4
SE8501HW4
Apr/05
Jun/05
Sept/05
512MB
Oct/05
Nov/05
E1108ACBG-8E-E
M393T6450FZ3-CCC
E1104ACSE-6E-E
SROMBSAS18E
A222G
HYB18T1G800C2F-3S
E1108AB-6E-E
HYB18T1G400C2F-3S
M393T6553CZ3-CCC
M393T2950CZ3-CCC
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2005 - E0593E10
Abstract: ELPIDA SDRAM User Manual Elpida DDR2 SDRAM component
Text: impedance differs, such as at bus and DRAM connection points. Signal reflection causes noise, which lowers , 2005 (K) Japan Printed in Japan URL: http://www.elpida.com © Elpida Memory, Inc. 2005 New , bus, such as is shown in Figure 2-1, DRAM that are in active mode are affected by reflected signals from DRAM that are in standby mode. Thus, to ensure high signal quality required in a high-speed data , propagated on signal line. DRAM Active When DRAM is in active mode, signals are received via the I/O
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E0593E10
E0593E10
ELPIDA SDRAM User Manual
Elpida DDR2 SDRAM component
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2005 - ELPIDA
Abstract: Elpida Memory Mos MARKING CODE marking code cl marking code software ELPIDA PART MARKING elpida module
Text: marking items and layout of the DRAM product provided by Elpida Memory, Inc., and does not specify the , specification to Elpida sales office. 1. 1.1 DRAM Component Marking Example TSOP Package Type - 1 , February 2005 (K) Japan Printed in Japan URL: http://www.elpida.com © Elpida Memory, Inc. 2005 , E0590E10 (Ver.1.0) 2 MARKING AND LABEL 2. 2.1 DRAM Module Marking Example Lead-Free Product , (2 digits) are shown. 3.4 In-house code Elpida Memory in-house code is shown. In-house code
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E0590E10
M01E0107
ELPIDA
Elpida Memory
Mos MARKING CODE
marking code cl
marking code software
ELPIDA PART MARKING
elpida module
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2001 - ELPIDA
Abstract: EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
Text: SELECTION GUIDE DRAM Selection Guide Document No. E0226E80 (Ver.8.0) Date Published June 2002 (K) Japan URL: http://www.elpida.com © Elpida Memory, Inc. 2001-2002 DRAM Selection Guide , ). 10 3 DRAM Selection Guide 1. SDRAM Density 512Mbit (1/2) Organization Internal , Development, In sample or In production with condition, please contact Elpida sales to check the product , =1mA 4 OK OK OK DRAM Selection Guide (2/2) Density 128Mbit Organization Internal
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E0226E80
M01E0107
ELPIDA
EDS5104ABTA
EDS5108ABTA
PC800
ELPIDA DRAM selection guide
1gb 144pin pc133 so dimm
200pin SO DIMM
sdram elpida
EDS5116ABTA
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2001 - Not Available
Abstract: No abstract text available
Text: January 2001 CP (K) Printed in Japan Elpida Memory, Inc. is a joint venture DRAM company of NEC , VirtualChannel dynamic RAM module on which 16 pieces of 128Mbits VirtualChannel DRAM : µPD45V128821 are assembled , /types available in every country. Please check with local Elpida Memory, Inc. for availability and , NC : Address Inputs : VirtualChannel DRAM Bank Select : Data Inputs/Outputs : Clock Input : Clock , type Refresh rate / type VC DRAM width Error checking DRAM width Minimum clock delay Burst length
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MC-45V32AD642
32M-WORD
64-BIT
MC-45V32AD642
128Mbits
PD45V128821
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Not Available
Abstract: No abstract text available
Text: EOL in January, 2003. Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and , VirtualChannel dynamic RAM module on which 8 pieces of 128M VirtualChannel DRAM : µPD45V128821 are assembled , latest version. Not all devices/types available in every country. Please check with local Elpida , A12 'DWD 6KHHW E0027N10 [Row: A0 - A12, Column: A0 - A7] BA0 (A13) : VirtualChannel DRAM , serial PD memory Fundamental memory type 08H 0 0 0 0 1 0 0 0 VC DRAM 3
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MC-45V16AB642
16M-WORD
64-BIT
MC-45V16AB642
PD45V128821
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2001 - Not Available
Abstract: No abstract text available
Text: ) Printed in Japan This Product became EOL in January, 2003. Elpida Memory, Inc. is a joint venture DRAM , VirtualChannel dynamic RAM module (small outline DIMM) on which 8 pieces of 128M VirtualChannel DRAM , country. Please check with local Elpida Memory, Inc. for availability and additional information , [Row: A0 - A12, Column: A0 - A6] BA0 (A13) : VirtualChannel DRAM DQ0 - DQ63 : Data Inputs , serial PD memory Fundamental memory type 08H 0 0 0 0 1 0 0 0 VC DRAM 3
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MC-45V16AD642KS
16M-WORD
64-BIT
MC-45V16AD642KS
PD45V128161
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Not Available
Abstract: No abstract text available
Text: in January, 2003. Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi , VirtualChannel dynamic RAM module on which 16 pieces of 128Mbits VirtualChannel DRAM : µPD45V128821 are , latest version. Not all devices/types available in every country. Please check with local Elpida , A12 'DWD 6KHHW E0026N10 [Row: A0 - A12, Column: A0 - A7] BA0 (A13) : VirtualChannel DRAM , Fundamental memory type 08H 0 0 0 0 1 0 0 0 VC DRAM 3 Number of row
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MC-45V32AD642
32M-WORD
64-BIT
MC-45V32AD642
128Mbits
PD45V128821
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2001 - Not Available
Abstract: No abstract text available
Text: VirtualChannel dynamic RAM module (small outline DIMM) on which 4 pieces of 128M VirtualChannel DRAM , local Elpida Memory, Inc. for availability and additional information. Document No. E0028N11 (Ver. 1.1) (Previous No. M15239EJ1V0DS00) Date Published April 2001 CP (K) Printed in Japan Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC-45V8AB642KS Ordering Information , : Address Inputs : VirtualChannel DRAM Bank Select : Data Inputs/Outputs : Clock Input : Clock Enable Input
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MC-45V8AB642KS
64-BIT
MC-45V8AB642KS
PD45V128161
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