DRAIN BODY BREAKDOWN VOLTAGE Search Results

P603

Abstract: B6030L CEP6030LS2 CEB6030LS2
Contextual Info: CEP6030LS2/CEB6030LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVdss VgSz OV, ID=250|oA 30 Zero Gate Voltage Drain Current Idss Vds=24V, Vgs =0V Gate-Body Leakage Igss Vgs=±16V,Vds=0V

CEP603AL

Abstract: CEB603ALS2 CEP603A
Contextual Info: CEP603ALS2/CEB603ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voilage Drain Current Idss V ds=24V, V gs =0V 10 [iA Gate-Body Leakage

Contextual Info: CEP6031LS2/CEB6031LS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVdss Vgs =0V,ID=250 hA 30 Zero Gate Voltage Drain Current Idss V ds =24V, V gs =0V 10 pA Gate-Body Leakage

B703A

Abstract: GS109 P703
Contextual Info: CEP703ALS2/CEB703ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BV dss V gSz OV, ID=250[i A 30 Zero Gate Voltage Drain Current Idss V ds =24V, Vgs =0V 10 [iA Gate-Body Leakage

ZVN4424G

Abstract: ZVN4424 ZVP4424G DSA0037385 10VZ/X/
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 240 Gate-Source Threshold Voltage VGS(th) 0.8 Gate-Body Leakage IGSS

zvn4206

Abstract: zvn4206 application FAST DMOS FET Switches n-CHANNEL ZVN4206G DSA003784
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage VGS(th) 1.3 Gate-Body Leakage MAX.

"low threshold mosfet"

Abstract: TN2524N8 VN2210N3 VN2224 VN2224N3 ICM7555 IRF520 TN0604N3 TN2524N
Contextual Info: AN-D02 Application Note Low-Threshold TN/TP Series MOSFETs: Structure, Performance and Applications Introduction age. One method of reducing threshold voltage is to reduce the body dopant concentration until the required VGS th is met. This technique by itself is dangerous because it degrades other device parameters. The first and most important of these is drain-source breakdown (BVDSS), which is a

Trench MOSFET Termination Structure

Abstract: Diodes ed26 PN channel MOSFET 10A Design Seminar electric field International Power Sources International Semiconductor Technologies etal p407 vishay ED26 Designing with Field Effect Transistors
Contextual Info: Presented at the 7th International Seminar on Power Semiconductors, ISPS’06, Prague, Czech Republic, 2006. Low-Voltage, Super-Junction Technology Deva N. Pattanayak, Yuming Bai, and King Owyang Vishay Siliconix 2201 Laurelwood Road, Santa Clara, CA 95054, USA

Contextual Info: 2SK1317 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver

Contextual Info: 2SK2393 Silicon N-Channel MOS FET HITACHI November 1996 Application High voltage / High speed power switching Features • Low on-resistance, High breakdown voltage • High speed switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching regulator, Motor Control

2SK1317

Abstract: 25fv Hitachi Scans-001 4030D
Contextual Info: 2SK1317 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • High breakdown voltage V DSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver

2SK2225

Abstract: 2SK2225 APPLICATION CIRCUIT 2sk2225* typical circuit
Contextual Info: 2SK2225 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • High breakdown voltage V DSS = 1500 V • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter

"VDSS 800V" mosfet

Abstract: 3N80
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

POWER MOSFET Rise Time

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3710 Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or

2sk2278

Abstract: 2SK2278L 2SK1317
Contextual Info: 2SK2278 L , 2SK2278 S Silicon N Channel MOS FET Application HDPAK 4 High speed power switching Features • • • • 4 1 2 High breakdown voltage VDSS = 1500 V High speed switching No secondary breakdown Suitable for Switching regulator, DC – DC converter

utc 3n80l

Abstract: 3n80 3N80G 3N80L-TF1-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

AN-1084

Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
Contextual Info: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5

3N80G

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

HEXFET Power MOSFET designer manual

Abstract: MOSFET designer manual HEXFET Power MOSFET Designers Manual N-Channel jfet 100V depletion P-Channel Depletion Mosfets BJT with i-v characteristics BJT Gate Drive circuit BJT with V-I characteristics TRANSISTORS BJT with low gate voltage Low Capacitance bjt
Contextual Info: Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3 Amps, 800 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N80 provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7P20 Power MOSFET 200V P-CHANNEL MOSFET „ DESCRIPTION The 7P20 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max

Contextual Info: FCPF400N80ZL1 N-Channel SuperFET II MOSFET 800 V, 11 A, 400 mΩ Features Description • Typ. RDS on = 340 mΩ SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

fairchild 4245

Abstract: FCA36N60NF
Contextual Info: SupreMOS FCA36N60NF N-Channel tm SupreMOS®, FRFET®,MOSFET 600V, 36A, 95mΩ Features Description • RDS on = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A The SupreMOS® MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling