DPAK MARKING CODE 300 Search Results

st morocco tip122

Abstract: Darlington pair IC schematic morocco tip122 MJD122 MJD122-1 MJD122T4 MJD127 MJD127-1 MJD127T4 TIP122
Contextual Info: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube

chn 935

Abstract: ST CHN t4 CHN 640 STMicroelectronics DPAK Marking CODE diode chn 940 morocco tip122 chn 940 935 CHN MJD127 CHN T4
Contextual Info: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube

transistor D888

Abstract: D888 STD888 st d888
Contextual Info: STD888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR • ■ ■ ■ ■ Ordering Code Marking STD888 D888 VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT SURFACE-MOUNTING DPAK TO-252

DPG10I300PA

Contextual Info: DPG 10 IM 300 UC advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 3 2 Marking on Product: PAOGUI Backside: cathode Features / Advantages:

DPG10I300PA

Contextual Info: DPG10IM300UC HiPerFRED² VRRM = 300 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10IM300UC Marking on Product: PAOGUI Backside: cathode 1 3 2/4 Features / Advantages: Applications:

DPG10I300PA

Abstract: dpak DIODE ANODE COMMON
Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:

DPG10I300PA

Abstract: diode t 3866 t 3866 power transistor dpak DIODE ANODE COMMON
Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:

03866

Abstract: 07062
Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:

Contextual Info: MURD330 SWITCHMODEt Power Rectifier DPAK Surface Mount Package These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • http://onsemi.com ULTRAFAST RECTIFIER 3 A, 300 V

Contextual Info: STD10NF30 Automotive-grade N-channel 300 V, 10 A, 0.28 Ω typ., MESH OVERLAY Power MOSFET in a DPAK package Datasheet - production data Features TAB Order code VDS RDS on max. ID STD10NF30 300 V 0.33 Ω 10 A • Designed for automotive applications and

marking 27550

Abstract: 27550G 27533G 27525G 27533 Regulator marking code A3 sot223 27550 MC33275
Contextual Info: MC33275, NCV33275 300 mA, Low Dropout Voltage Regulator The MC33275 series are micropower low dropout voltage regulators available in a wide variety of output voltages as well as packages, SOT−223, SOP−8, and DPAK surface mount packages. These devices feature a very low quiescent current and are capable of

Contextual Info: SKFM640C-D FM120-M+ WILLAS THRU THRU 6.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE -20V- 200V SKFM6200C-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TSM70N380 700V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.38 Ω Qg 19.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● ● ● ●

Contextual Info: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

51y diode

Abstract: SGFM52Y-D-TH
Contextual Info: WILLAS FM120-M+ SGFM51Y-D THRU THRU 5.0A SUFRACE MOUNT SUPER FAST RECTIFIERS - 50-600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V DPAK PACKAGE FM1200-M+ SGFM58Y-D Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

CDBD620-G

Abstract: CDBD640-G CDBD650-G CDBD660-G CDBD680-G CDBD6100-G
Contextual Info: Chip Schottky Barrier Rectifier CDBD620-G Thru. CDBD6100-G Reverse Voltage: 20 to 100 Volts Forward Current: 6.0 Amp RoHS Device DPAK Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

TSM60N380CP

Abstract: TSM60N380CH TSM60N380CI
Contextual Info: TSM60N380 600V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.38 Ω Qg 20.5 nC TO-252 (DPAK) Block Diagram Features ● ● Super-Junction technology

Contextual Info: TSM70N380 700V, 11A, 0.38Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.38 Ω Qg 19.7 nC TO-252 (DPAK) Block Diagram Features ● ● Super-Junction technology