DPAK DIODE 948 Search Results

5M MARKING CODE DIODE SMC

Contextual Info: NTD4302 Power MOSFET 18.5 Amps, 30 Volts N–Channel DPAK Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature

n02r

Abstract: T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948
Contextual Info: NTD60N02R Power MOSFET 62 Amps, 24 Volts N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

P3NK60ZFP

Abstract: p3nk60z D3NK60Z STP3NK60ZFP D3nk6 p3nk60 P3NK60ZF STD3NK60Z-1 d3nk STP3NK60Z
Contextual Info: STP3NK60Z - STP3NK60ZFP STD3NK60Z - STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE STP3NK60Z STP3NK60ZFP STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS R DS on 600 600

Contextual Info: STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 600 600

p3nk60z

Abstract: P3NK60ZFP b3nk60z d3nk60z STD3NK60ZT4
Contextual Info: STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS R DS on 600

D3nk6

Abstract: B3NK60Z p3nk60 p3nk60z p3nk60zfp d3nk60z d3nk Zener Diode B1 2 P3NK B3NK
Contextual Info: STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 600 600

D3nk6

Abstract: B3NK60Z p3nk60 p3nk60z P3NK60ZFP d3nk60z l9815 P3NK6 d3nk STB3NK60Z-STD3NK60Z-STD3NK60Z-1
Contextual Info: STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 600 600

p3nk60zfp

Abstract: D3nk6 p3nk60z B3NK60Z d3nk60z p3nk60zfp datasheet p3nk60 D3NK transistor P3NK60ZFP STP3NK60ZFP
Contextual Info: STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 600 600

T60 N02R

Abstract: T60N02R 60N02R 60N02 n02r
Contextual Info: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.4 mW @ 10 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip

T60 N02R

Abstract: T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4
Contextual Info: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.0 mW @ 4.5 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip

T60N02R

Contextual Info: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

t60n02r

Abstract: T60 N02R 60N02R T 60 N02R 60N02
Contextual Info: NTD60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

t3055vl

Abstract: 3055VL T30-55VL 418B-03 5M MARKING CODE DIODE SMC MTD3055VLT4
Contextual Info: MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: NTD60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in

Contextual Info: NTD3055-094 Advance Information Power MOSFET 12 Amps, 60 Volts N–Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 12 AMPERES 60 VOLTS RDS on = 94 mΩ

Contextual Info: New Product VS-5EWH06FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 5 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation 1 N/C

Contextual Info: VS-5EWH06FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 5 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation 1 N/C • Low forward voltage drop

Contextual Info: New Product VS-5EWH06FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 5 A FRED Pt FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation 1 N/C

Contextual Info: NGD15N41CL Product Preview Ignition IGBT 15 Amps, 410 Volts N–Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

l1n06c

Abstract: 5M 365 R tsop6 marking 312 sot363 ON Marking DS L1N06 MLD1N06CL
Contextual Info: MLD1N06CL Preferred Device SMARTDISCRETESt MOSFET 1 Amp, 62 Volts, Logic Level N–Channel DPAK The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit MCU . Ideal applications

TSSOP-8 footprint and soldering sot-23

Contextual Info: MTB50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

diode 1407

Abstract: FT107
Contextual Info: MMFT107T1 Preferred Device Power MOSFET 250 mA, 200 Volts N–Channel SOT–223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and relay drivers. The device is housed in the SOT–223

Contextual Info: NIB6404-5L Preferred Device Product Preview SMARTDISCRETESt 52 Amps, 40 Volts Self Protected with Temperature Sense N–Channel D2PAK http://onsemi.com SMARTDISCRETES devices are an advanced series of Power MOSFETs which utilize ON Semiconductor’s latest MOSFET