DPAK 5 PIN Search Results

175AA

Abstract: d marking code dpak transistor 5- pin smd IC 775
Contextual Info: NCV4275 Advance Information 5 V Low−Drop Voltage Regulator This industry standard linear regulator has the capability to drive loads up to 450 mA at 5 V. It is available in DPAK, D2PAK, and TO−220 options. This device is pin−for−pin compatible with

t5n50

Abstract: 5n50 5n50 mosfet NTD5N50 NTD5N50T4 351 D-PAK
Contextual Info: NTD5N50 Preferred Device Advance Information Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com 5 AMPERES 500 VOLTS

TLE4275

Abstract: 314-D INFINEON PART MARKING DPAK smd regulator 5pin marking vd 5pin
Contextual Info: NCV4275 Advance Information 5 V Low−Drop Voltage Regulator This industry standard linear regulator has the capability to drive loads up to 450 mA at 5 V. It is available in DPAK, D2PAK, and TO-220 options. This device is pin-for-pin compatible with Infineon part number TLE4275.

MJD200RL

Abstract: 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100
Contextual Info: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS

6133d

Abstract: P-TO252-5 IL12 BTS 6133D dpak 5 pin
Contextual Info: P R O D U C T B R I E F The BTS 6133D is a single channel high-side power switch 10 mΩ in TO252-5 (DPAK 5 pin) package. It is fully protected by embedded protection functions including ReverSafe and InverSafe. ReverSafe is a protection feature that causes the

TS39100

Abstract: TS39104CS SOP8 PNP Transistor Package 2525l
Contextual Info: TS39100/1/2/3/4/5 1A Ultra Low Dropout Voltage Regulator with Multi-Function SOT-223 TO-252 DPAK Pin Definition: TS39100CWxx 1. Input 2. Ground (tab) 3. Output Pin Definition: TS39100CPxx 1. Input 2. Ground (tab) 3. Output SOP-8 Pin Definition: TS39101CSxx

Contextual Info: MJD200 NPN , MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS

5P06V

Abstract: 369D AN569 MTD5P06V NTD5P06V d marking code dpak transistor
Contextual Info: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

6143d

Abstract: P-TO252-5 BTS 6143D IL12 dpak 5 pin fully protected p channel mosfet
Contextual Info: P R O D U C T B R I E F The BTS 6143D is a single channel high-side power switch 10 mΩ in TO252-5 (DPAK 5 pin) package. It is fully protected by embedded protection functions including ReverSafe. ReverSafe is a protection feature that causes the power transistor to switch on in case of reverse

p06vg

Contextual Info: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

5n50 mosfet

Abstract: 5n50 t5n50 transistor 5N50 NTD5N50T4 NTD5N50-1 AN569 NTD5N50 SMD310
Contextual Info: NTD5N50 Preferred Device Power MOSFET 5 Amps, 500 Volts N–Channel DPAK Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com Features • • • • • •

5P06V

Abstract: AN569 MTD5P06V MTD5P06V1 MTD5P06VT4 MOSFET SC-59 power
Contextual Info: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

5P06V

Abstract: 5p06
Contextual Info: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

5P06V

Abstract: Power MOSFET 12 Amps, 60 Volts p-Channel 369D AN569 MTD5P06V MTD5P06VT4 MTD5P06V1
Contextual Info: MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

6163D

Abstract: BTS 6163D P-TO252-5 dpak 5 pin IL12 Q67060-S7424
Contextual Info: P R O D U C T B R I E F The BTS 6163D is a single channel high-side power switch 20 mΩ in TO252-5 (DPAK 5 pin) package. It is fully protected by embedded protection functions including ReverSafe. ReverSafe is a protection feature that causes the power transistor to switch on in case of reverse

25V 1A power MOSFET TO-220

Abstract: mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220
Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

PA 0016 diagram

Abstract: P-channel MOSFET
Contextual Info: TSM10P06 60V P-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDSON (mΩ) ID (A) 170 @ VGS = -10V -5 220 @ VGS = -4.5V -2 -60 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

BYQ28

Abstract: BYQ28E BYQ28E-200 BYQ28EB BYQ28ED-200 diode BYq28 sym084
Contextual Info: BYQ28 series E and ED Rectifier diodes ultrafast, rugged Rev. 04 — 5 December 2007 Product data sheet 1. Product profile 1.1 General description Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 TO-220AB and a SOT428 (DPAK) plastic package.

DPAK A11

Abstract: MOSFET TO-252
Contextual Info: TSM10P06 60V P-Channel MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDSON (mΩ) ID (A) 170 @ VGS = -10V -5 220 @ VGS = -4.5V -2 -60 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

TSM2N60CP

Abstract: MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60 TSM2N60CH
Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

2a 400v mosfet to-251

Abstract: N-Channel mosfet 600v 1a BRIDGE 2A 600V MOSFET TO-220 MOSFET "CURRENT source" impedance mosfet 600V 2A TO-252 N-channel MOSFET
Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

2a 400v mosfet to-251

Abstract: 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak
Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

500V 25A Mosfet

Abstract: DIODE B12
Contextual Info: TSM5NB50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) (max.) ID (A) 500 1.5 @ VGS =10V 5 General Description TO-251 (IPAK) The TSM5NB50 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This