DOX 10 Search Results
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HUBER+SUHNER RADOX EN50306-2 300V 1X0.75 M WHHook-up Wire RADOX EN50306-2 300V M |
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RADOX EN50306-2 300V 1X0.75 M WH |
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HUBER+SUHNER RADOX EN50306-3 300V 3X1 MM SMulti-Conductor Cables RADOX EN50306-3 300V MM S |
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RADOX EN50306-3 300V 3X1 MM S |
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HUBER+SUHNER RADOX EN50306-3 300V 4X1 MM SMulti-Conductor Cables RADOX EN50306-3 300V MM S |
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RADOX EN50306-3 300V 4X1 MM S |
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HUBER+SUHNER RADOX SYST 10LF+1DB XM SMulti-Conductor Cables RADOX SYST 10LF+1DB XM S |
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RADOX SYST 10LF+1DB XM S |
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SMC CYLINDERS CDVRA1BYU80-180Z-25DO-X10ROTARY ACTUATOR, RACK & PINION TYPE, CRA1-Z SERIES |
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CDVRA1BYU80-180Z-25DO-X10 | Bulk | 5 Weeks | 1 |
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DOX 10 Datasheets Context Search
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D0X49T
Abstract: Latching relay 2 pole DOX-184T dox5 OHMITE dos relay
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DOX-50T D0X49T DOX-184T D0X-181T DOX-185T DOX-226T DOX-227T DOX-228T UX033T" X-130T Latching relay 2 pole dox5 OHMITE dos relay | |
N-Channel Depletion-Mode MOSFET high voltage
Abstract: pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt
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LND150 LND150N3 O-243AA* LND150N8 LND150ND OT-89. N-Channel Depletion-Mode MOSFET high voltage pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt | |
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Contextual Info: SD718CF256 256K x 18 CMOS Synchronous Burst Flow-Through SRAM Features Functional Description • +3.3V+10%, -5% Power Supply The SD718CF256 is a high speed 4M, 262,144 x 18 cell, synchronous burst CMOS Static RAM organized as 256K words by 18 bits that supports high performances |
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SD718CF256 SD718CF256 5ns/10ns/11ns SD718CF256TQ-7 SD718CF256TQ-8 100-pin | |
G38-87Contextual Info: [Advance Information] SD732CF64 64K x 32 CMOS Synchronous Burst Flow-Through SRAM Features Functional Description • +3.3V+10%, -5% Power Supply The SD732C64 is a high speed 2M, 65,536 x 32 cell, synchronous burst Flow-Through CMOS Static RAM organized as 64K words by 32 bits that supports high |
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SD732CF64 SD732C64 10s/12ns/15ns 100-pin SD732CF64Q-5 SD732CF64Q-6 SD732CF64Q-7 G38-87 | |
F100155
Abstract: F100355 qd223 966-03
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F100155 TL/F/9860-7 F100355 qd223 966-03 | |
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Contextual Info: 8T58-I.X L P R ELIM IN A R Y S P E C IF IC A T IO N DESCRIPTION APPLICATIONS The Bus E xpander is s p e c ific a lly designed to increase the I/O c a p a b ility o f 8X300 sys tem s pre vio u sly lim ite d by fa n o u t c o n s id e r ations. The bus exp ande r serves as a bu ffer |
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8T58-I 8X300 8X300. 1N916 1N3064. | |
TLE8110
Abstract: DRACL dox 10 REGISTER31 app abstract
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TLE8110EE TLE8110EE TLE8110 DRACL dox 10 REGISTER31 app abstract | |
N 7337Contextual Info: JL £ . DO NOT SCALE DIMENSIONS IN MM. 4 .5 S. C 3 4 5 7 4 8 C.A.D. FUE CODE REF —SECTION li WI RE RANGE: .0.75 INSULATION THIN TO RANGE; Sfil Still •Vi PsÄiä m i ffipSääS Ó!M p i WHÉÌ 2. 00 1. 65 Y-Y AJ'^' E TO B PRODUCT SPEC. 108-3069 APPL I CA TI ON SPEC. |
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C345148 N 7337 | |
mil-std-883 2015
Abstract: mil-std-883* 2015 LV500 BOX BUILD FABRICATION PROCESS INCOMING RAW MATERIAL INSPECTION method for Total organic carbon analyzer INCOMING RAW MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION report
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 3-Bit 4:1 Mux-Latch M C10E156 M C100E156 The MC10E/100E156 contains three 4:1 multiplexers followed by transparent latches with differential outputs. When both Latch Enables LEN1, LEN2 are LOW, the latch is transparent, and output date is |
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C10E156 C100E156 MC10E/100E156 950ps 850ps DL140 b3b7E52 | |
em6420
Abstract: EM6819 sensor map IC 4096 EM-64201 EM MICROELECTRONIC-MARIN EM6819 Capacitive touch waterproof ir touch screen TOUCH SCREEN MCU 110B
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EM6420 EM6420 MLF32-36-40 6420-DS 10-Jun-10 EM6819 sensor map IC 4096 EM-64201 EM MICROELECTRONIC-MARIN EM6819 Capacitive touch waterproof ir touch screen TOUCH SCREEN MCU 110B | |
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Contextual Info: * DESCRIPTION FEATURES • ■ ■ ■ ■ 725ps max. D to output Differential outputs Split select architecture ESD protection of 2000V Fully compatible with Industry standard 10KH, 100K ECL levels ■ Extended 100E V ee range of -4.2V to -5.46V ■ Internal 75K£i Input pulldown resistors |
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725ps MC10E/100E171 SY10E171 SY100E171 multiplexers650 J28-1 | |
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Contextual Info: * 3-BIT 4:1 MUX-LATCH SYNERGY SY10E156 SY100E156 SEMICONDUCTOR FEATURES DESCRIPTION • ■ ■ ■ ■ ■ ■ dOOps max. D to output Extended 100E V e e range of -4.2V to -5.5V 800ps max. LEN to output Differential outputs Asynchronous Master Reset Dual latch enables |
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SY10E156 SY100E156 800ps MC10E/100E156 J28-1 SY100E156JCTR SY100E156JC SY10E156JCTR | |
bsim3 0.18 micron parameters
Abstract: bsim3 model ESSDERC-98
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464-IEDM bsim3 0.18 micron parameters bsim3 model ESSDERC-98 | |
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voltage stabilizer winding dataContextual Info: 14-Bit, 125 MSPS/105 MSPS/80 MSPS, 1.8 V Analog-to-Digital Converter AD9255 Preliminary Technical Data FEATURES APPLICATIONS SNR = 78.3 dBFS @ 70 MHz and 125 MSPS SFDR = 93 dBc @ 70 MHz and 125 MSPS Low power: 371 mW @ 125 MSPS 1.8 V analog supply operation |
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14-Bit, MSPS/105 MSPS/80 EnerAD9255-105EBZ1 AD9255-80EBZ1 48-Lead CP-48-8 voltage stabilizer winding data | |
AS-Interface circuit diagram
Abstract: AS-Interface a2si ZMD AG
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Contextual Info: SYNERGY QUAD MULTIPLEXER/LATCH SEMICONDUCTOR ADVANCE INFORMATION DESCRIPTION FEATURES The SY100/101S355 offers four transparent latches with differ ential outputs, and is designed for use in high performance ECL systems. The Select inputs 5 o , S, selects one of the two sources |
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SY100/101S355 | |
Scans-048
Abstract: DSAGER00039 U882 bmc 8-e
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Contextual Info: * -'-v 100 S J 55 QUAD M U LTIPl EXE R /_A TC H S Y N ER G Y SE M IC O N D U C T O R FEATURES DESCRIPTION • Max. propagation delay of HOOps T h e S Y 1 0 0 S 3 5 5 o ffe rs fo u r tra n s p a re n t la tc h e s w ith d iffe re n tia l o u tp u ts a n d is d e s ig n e d fo r u s e in h ig h p e rfo rm a n c e E C L s y s te m s . T h e S e le c t in p u ts So, S i |
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1400ps SV100S355 SY100S355DC SY100S355FC 100S355JC SY100S355JCTR D24-1 F24-1 J28-1 J28-1 | |
r2x smd
Abstract: inverter 618
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XFWI321618 XFWI321 r2x smd inverter 618 | |
AD9255
Abstract: AD9265
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14-Bit, MSPS/105 MSPS/80 AD9255 48-Lead CP-48-8 AD9255 AD9265 | |
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Contextual Info: MITSUBISHI SOUND PROCESSORS M62447SP A>c cfì'r t * * 6CH ELECTRIC VOLUME DESCRIPTION Q. The M 62447SP is 6 channels electric volume controlled 3-wire serial data. The 1C is suitable for use in home-use audio systems and T V sets. features^ PACKAGE • Electric volume |
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M62447SP 62447SP -79dB 16-bit 42P4B 28P3Y-H /400mil 28P3Y-J 5M4V4800J, | |
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Contextual Info: THE INFÜRMATIÜN CONTAIÆD HEREIN IS CONSIDERED •PROPRIETARY' TD BEL FUSE INC. AND SHALL MDT BE CEP1ED, REPRODUCED CR MSCLEISED WITHOUT THE VRITTEN APPROVAL DF BEL RJSE IND. SCHEMATIC PIN RJ45 ELECTRICAL CHARACTERISTICS B 25»C TURNS RAT1D TRD1+ 1L 12 TP2 |
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TRP21CT 65MHz 65MHz 100MHz 125MHz 5MHz-40MHz 4DMHz-100MHz DC002 0813-1X1T-43 D8131X1T | |
TRANSISTOR WM 9
Abstract: WM8200-EV1B manual install dox 10 on xp WM8200 Potentiometer SMD C50-52 transistor SMD J9 LNK11 THS5671A 10K potentiometer pcb mountable
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WM8200 WM8200 40MSPS WM8200-EV1B WM8200-EV1S WM8200-EV1M TRANSISTOR WM 9 manual install dox 10 on xp Potentiometer SMD C50-52 transistor SMD J9 LNK11 THS5671A 10K potentiometer pcb mountable | |