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b20100g

Contextual Info: MBRB20100CTG, NRVBBS20100CTT4G, NRVBB20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.

B20100G

Abstract: B20100G diode AKA B20100G AKA B20100 B20100G on aka B20100G AKA B20100G diode AKA b20100 mbrb20100ctg b20100 g
Contextual Info: MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.

b10 45g

Abstract: ON B10 45G 940 b10 45g b1045g SBRD81045 MBRD1045G 838 b10 45g SBRD81045T4G B1045 SBRB1045T4G
Contextual Info: MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G Preferred Device SWITCHMODE Schottky Power Rectifier http://onsemi.com Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art

Contextual Info: MBR40L45CTG, NRVBB40L45CTT4G SWITCHMODE] Power Rectifier 45 V, 40 A http://onsemi.com Features and Benefits • • • • • • • • • SCHOTTKY BARRIER RECTIFIERS 40 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity

b2545g

Abstract: B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry
Contextual Info: MBRB2545CTG, SBRB2545CTG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • 

B20200G

Abstract: 418B-04 B20200G AKA b20200 D2PAK SCHOTTKY BARRIER RECTIFIER aka SBRB20200 PPAP MANUAL
Contextual Info: MBRB20200CTG, SBRB20200CTT4G SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V

b10 45g

Abstract: b1045 940 b10 45g b1045g MBRD1045T4G MBRB1045T4G ON B10 45G diode b1045 MBRB1045 MBRB1045G
Contextual Info: MBRB1045, MBRD1045 Preferred Device SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

MBRS140T3G

Abstract: SBRS8140T3G B14A schottky diode SMB marking code 120 b14 smb diode smb marking code B14
Contextual Info: MBRS140T3G, SBRS8140T3G Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

NRVBS3200T3

Abstract: NRVBS3200T3G power rectifier MBRS3200T3 Rev.5 MBRS3200T3D
Contextual Info: MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

403A03

Contextual Info: MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBR130T1G

Abstract: MBR130T3G
Contextual Info: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

UH840G

Abstract: uh840 UH840G AKA UH840 G SURHB8840CTT4G mur*840ct
Contextual Info: MURHB840CTG, MURHB840CTT4G, SURHB8840CTT4G Power Rectifier D2PAK Power Surface Mount Package These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features •      

MBRA160T3G

Abstract: SMA CASE 403D-02 footprint
Contextual Info: MBRA160T3G, NRVBA160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

SML05SC12D3

Abstract: LE17 MIL-PRF19500 QR217 schottky rectifier diode
Contextual Info: SILICON CARBIDE SCHOTTKY RECTIFIER DIODE SML05SC12D3 • • • • • • Hermetic Ceramic Surface Mount Package “D-5B” / “E-MELF” Compatible Footprint 1200V, 5A, Schottky Rectifier Zero Forward and Reverse Recovery High Frequency Operation Fast Temperature Independent Switching

20100CT

Abstract: 2060CT 2080CT MBR20100CT MBR2060CT MBR2080CT MBR2090CT
Contextual Info: MBR2060CT, MBR2080CT, MBR2090CT, MBR20100CT MBR2060CT and MBR20100CT are Preferred Devices SWITCHMODE Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following

f20up20dn

Abstract: power Diode 200V 10A f20up20dn
Contextual Info: FFPF20UP20DN Ultrafast Recovery Power Rectifier FFPF20UP20DN Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 45ns • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers

F10UP20S

Abstract: F10UP20 F10UP
Contextual Info: FFB10UP20S Ultrafast Recovery Power Rectifier FFB10UP20S Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Recovery : < 45ns • High Reverse Voltage : VRRM = 200V • Avalanche Energy Rated • Planar Construction Applications • Output Rectifiers

B20H100G

Contextual Info: MBRJ20H100CTG SWITCHMODE Power Rectifier 100 V, 20 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.64 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg

Contextual Info: FYPF0545S FYPF0545S Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes TO-220F 1 2 1. Cathode 2. Anode SCHOTTKY BARRIER RECTIFIER

B540A

Abstract: NRVBS540 MBRS540T3G B540 diode B540-G MBRS540T3G marking code
Contextual Info: MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: FFAF10U20DN FFAF10U20DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F TO-3PF 1 2 3 1. Anode 2.Cathode 3. Anode

Contextual Info: FFPF10U20DN FFPF10U20DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER

Contextual Info: FFAF10U40DN FFAF10U40DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-3PF 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER

B2045G

Abstract: B2045G AKA
Contextual Info: MBRJ2045CTG Product Preview SWITCHMODE Power Rectifier Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg