DOUBLE SLUG TUNER Search Results

SF-11N

Abstract: SF-31N FXR SF-31N BNC T connectors INSERTION LOSS Microlab FXR QQ-S-365 SF-10B SF-10F SF-10N SF-10T
Contextual Info: MICROLAB/FXR Double Slug Tuners SF series ♦ ♦ ♦ ♦ ♦ ♦ Dual Impedance Transformer 300 to 5,000 MHz Ideal for Amplifier Stability Testing Adjustment Locking Long Life Beryllium Copper Contacts 500 Watt Average Power Rating N Connectors Standard Noise Free Operation

ACU50751

Abstract: dth set up box circuit
Contextual Info: A ARA05050S12 CATV Reverse Amplifier w/ Step Attenuator Advanced product information Rev. 5 FEATURES • Integrated monolithic GaAs amplifier and step attenuator. • Compatible with all digital and analog modulation types. • Frequency range: 5 - 100 MHz. • Gain: 0 - 30 dB, variable in 2 dB steps.

ACU50751

Abstract: settop box block diagram double slug tuner amp rj45 2N3904 2N3906 ACD0900 ARA05050 ARA05050S12 S12C
Contextual Info: A ARA05050S12 CATV Reverse Amplifier w/ Step Attenuator Advanced product information Rev. 6 FEATURES • Integrated monolithic GaAs amplifier and step attenuator. • Compatible with all digital and analog modulation types. • Frequency range: 5 - 100 MHz. • Gain: 0 - 30 dB, variable in 2 dB steps.

ACU50751

Abstract: 3 pins Variable resistor 5K ohm CATV MODULATOR 2N3904 2N3906 ACD0900 ARA05050 ARA05050S12 S12C Variable resistor 5K ohm
Contextual Info: A ARA05050S12 CATV Reverse Amplifier w/ Step Attenuator Advanced product information Rev. 6 FEATURES • Integrated monolithic GaAs amplifier and step attenuator. • Compatible with all digital and analog modulation types. • Frequency range: 5 - 100 MHz.

Contextual Info: E n WIGIŒ' ARA05050 CATV REVERSE AMPLIFIER WITH STEP ATTENUATOR Advanced Product Information Rev 2 D e s c r ip t io n F eatures The ARA05050 is a GaAs 1C designed to perform the reverse path amplification and output level control functions in a CATV Set-Top Box or Cable

application for bt 151

Abstract: LTE42005S LTE42008R R3305
Contextual Info: Jl N AMER PHILIPS/DISCRET E ObE D • bL53131 O D m ^ b ? b I LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich

Contextual Info: M i N AMER PHILIPS/DISCRETE ObE D • bbS3T31 _ J v □D150T1 T ■ PTB23001X PTB23003X PTB23005X T - 1 3 -o s '' T -IZ -O J MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bb 5 3 T 31 Q O m ^ b ? b ■ J V LTE42005S LTE42008R MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4,2 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold sandwich

Contextual Info: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

copper permittivity

Abstract: MLC092
Contextual Info: Philips Semiconductors Product specification PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN 1 • Interdigitated structure provides high emitter efficiency

copper permittivity

Abstract: PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 permittivity marking J6 transistors
Contextual Info: Philips Semiconductors Product specification PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors PINNING - SOT44QA FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency

75307

Abstract: PTB23001X PTB23003X PTB23005X T-33-O
Contextual Info: M ObE D N AMER P H I L I P S / D I S C R E T E DG15Cm ^ 5 3 ^ 3 1 T • PTB23001X PTB23003X PTB23005X T ­ 3 3 T - -0 *7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

IC BL 176A

Contextual Info: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.

409 Marking Code

Abstract: Data Handbook sc15
Contextual Info: Philips Semiconductors Product specification LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors FEATURES DESCRIPTION • Diffused emitter ballasting resistors The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal

CATV RF AGC Amplifier

Abstract: X6959M video mixer circuit diagram cable tv amplifier RF AGC Amplifier rf mixer 200-250 mhz RF Mixer for 200-250 MHz ISG510065 TSSOP-20 land pattern for TSSOP-20
Contextual Info: PRELIMINARY DATA SHEET ISG510065 CATV OUT-OF-BAND TUNER FEATURES FUNCTIONAL DIAGRAM EPCOS X6959M SAW FILTER • 3.3 V SINGLE SUPPLY OPERATION • LOW POWER CONSUMPTION 400 mW VDD • LOW DISTORTION 28,18 27,17 26,19 25, X 24,15 23,14 22,13 • 82 dB TOTAL CONVERSION GAIN

dth set up box circuit

Abstract: ARA1400 ARA1400S12
Contextual Info: A ARA1400S12 CATV Reverse Amplifier with Step Attenuator Advanced Product Information Rev. 2 FEATURES • · · · · · Low cost integrated monolithic GaAs amplifier and step attenuator with output disconnect switch. Meets DOCSIS distortion requirements at

Contextual Info: A ARA1400IS12 CATV Reverse Amplifier with Step Attenuator Advanced Product Information Rev. 0 FEATURES • · · · · · Low cost integrated monolithic GaAs amplifier and step attenuator with output disconnect switch. Meets DOCSIS distortion requirements at

r3305

Abstract: PTB32005X PTB32001X PTB32003X
Contextual Info: J N AMER PH I L I P S / D I S C R E T E ObE LbSBTBl D OD1S1DS 1 • PTB32001X PTB32003X PTB32005X MICROW AVE POW ER T RA N SISTO R S N-P-N silicon transistors for use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide

bel 187 transistor

Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn
Contextual Info: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.

616PT

Abstract: TTN 46 16
Contextual Info: A ARA2000S12 CATV Reverse Amplifier with Step Attenuator Advanced Product Information Rev. 0 FEATURES • · · · · · Low cost integrated monolithic GaAs amplifier with step attenuator. Attenuation Range: 0 – 56 dB, variable in 1 dB steps via serial input.

Contextual Info: N AMER PHILIPS/DISCRETE DbE D • bbS3T31 0015115 4 ■ PTB42003X T - 33 - 0 7 MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.

PTB42003X

Contextual Info: l'P-33'Ol PTB42003X \_ PHILIPS INTERNATIONAL St.E D • 7110fl2b DD4b44fl Mb? ■ P H I N MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.

Zn33

Abstract: MARKING 41B IEC134 PTB42003X dust cap LC f041b 2A marking code marking code 41b marking TI33
Contextual Info: « N AMER P H I L I P S / D I S C R E T E bbS3T31 OkE D 00 15115 A M I PTB42003X T - 33 -¿> *7 MICROW AVE POW ER TRA N SISTO R N-P-N silicon power transistor for use in a common-base, class-C amplifier up to a frequency of 4,2 GHz in c.w. conditions in military and professional applications.

TRANSISTOR K 314

Abstract: MARKING 41B marking A1 TRANSISTOR PTB42003X 7Z94083
Contextual Info: V-3 3 '0 7 PTB42003X / \ _ PHILIPS INTERNATIONAL 5L.E D • 711D05b 004b44fl Mb? ■ PHIN MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C am plifier up to a frequency o f 4.2 GHz in CW conditions in m ilita ry and professional applications.