DOUBLE INT-A-PAK PACKAGE Search Results

IGBT DRIVE 50V 300A

Abstract: LTA 902 GA600GD25S AK 1262 igbt "internal thermistor" int-a-pak
Contextual Info: PD -50071B GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

GA400TD25S

Contextual Info: PD -50051C GA400TD25S "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

Contextual Info: International IQ R Rectifier preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK PD'5051 G A 400TD 25S Standard Speed IGBT Features • Generation 4 IGBT technology V ces = 250V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz

1515G

Abstract: GA250TD120U
Contextual Info: PD - 50054A GA250TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

200a 300v mosfet

Contextual Info: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated

lm 8446

Abstract: CN400
Contextual Info: International IQ R Rectifier h«umina«y "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK P0‘5057' G A 300TD 60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

GA400TD60U

Contextual Info: PD - 5.059B PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-FastTM Speed IGBT Feature Featuress VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

hexfred

Contextual Info: International Rectifier I«R PD -5.051 B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD25S Standard Speed IGBT Features • Generation 4 IGBT technology V ces = 250V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz

Contextual Info: International TOR Rectifier PD -5.048 PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces - 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

shct

Abstract: WE VQE 24 E IRGTDN150M12 IR 501
Contextual Info: International ^R ectifier PD9206 IRGTDN150M12 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT V Œ = 1200V lc = 1 5 0 A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail'1 losses •Short circuit rated Vce O N < 2 .5 V

irf p 1806

Contextual Info: International Rectifier IÖR PD - 5.059B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD60U Ultra-Fast Speed IGBT Featu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: International IOR Rectifie f PD - 5.054 GA250TD120U PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Fe at ur es — • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

ir 249A

Abstract: GA200TD120U W80S
Contextual Info: PD - 50061C GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

LM 1709

Abstract: GA150TD120U DT12-6
Contextual Info: PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200 V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses

C1017

Contextual Info: Provisional Data Sheet PD-9.1200 International [^Rectifier IRGTDN150K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 150A • Rugged Design •S im ple gate-drive •S w itching-Loss Rating includes all "tail" losses •S h ort circuit rated

Contextual Info: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z

GA300TD60U

Contextual Info: PD -5.057C PRELIMINARY "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA300TD60U Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: International I R Recti fi Gf PD - 5.048B P R E LIM IN A R Y "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA500TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V • UltraFast: Optimized for high operating frequencies 8 -4 0 kHz in hard switching, >200

Contextual Info: International I R Recti fi Gf PD - 5.061 B P R E LIM IN A R Y GA200TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: PD -5.057C International lO R R e c tifi GT P R E LIM IN A R Y "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK GA300TD60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200

GA200TD120U

Contextual Info: International IOR Rectifie f PD - 5.061 B P RE LI MI NAR Y GA200TD120U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V ces = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: International I R Recti fi Gf PD - 5.054 PR ELIM IN A R Y G A250T D 120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V c e s = 12 0 0 V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz

GZ75

Contextual Info: International I«R Rectifier PD -5.061 A PR E LIM IN A R Y G A 200T D 1 2 0 U "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V q e s — 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: International l R Rectifier preliminary SINGLE SWITCH IGBT DOUBLE INT-A-PAK PD-50071A G A600G D25S Standard Speed IGBT Features • S tan dard speed, op tim ized fo r ba tte ry pow ered application • V e ry low con du ction losses • H E X F R E D ™ an tipa ralle l diode s w ith ultra-soft