DOC ID 17486 REV 4 Search Results

DOC ID 17486 REV 4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Doc ID 17486 Rev 7 Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	STRH100N10 O-254AA STRH100N10HY1 STRH100N1 Doc ID 17486 Rev 7	PDF
STRH100N10 Abstract: STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01 Contextual Info: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened	Original	STRH100N10 O-254AA STRH100y STRH100N10 STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01	PDF
Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	STRH100N10 O-254AA STRH100N10HY1 STRH100N10HY01	PDF
MIL-STD-750E Abstract: STRH100N10 STRH100N10FSY1 Contextual Info: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened	Original	STRH100N10 O-254AA MIL-STD-750E STRH100N10 STRH100N10FSY1	PDF
Contextual Info: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened	Original	STRH100N10 O-254AA O-254AA	PDF
STRH100N10H Abstract: vd 5205 Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	STRH100N10 O-254AA STRH100N10HY1 STRH100N1 STRH100N10H vd 5205	PDF