Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DO214BA GENERAL SEMICONDUCTOR Search Results

    DO214BA GENERAL SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM9513ADIB
    		Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    CA3140AT/B
    		Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS PDF Buy
    CA3130AT/B
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3140T
    		Rochester Electronics LLC CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS, MBCY8 PDF Buy

    DO214BA GENERAL SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DO214BA

    Abstract: DO-214BA DO-214B do214ba general semiconductor
    Contextual Info: EGF1T New Product Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 1300 V IFSM 20 A trr 75 ns EAS 15 mJ Tj max. 150 °C d* e t n Pate * Glass-plastic encapsulation technique is covered by patent


    Original     		DO-214BA MIL-S-19500 J-STD-020C DO-214B0 12-Aug-05 DO214BA DO-214BA DO-214B do214ba general semiconductor PDF

    DO-214BA

    Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat


    Original     		DO-214BA MIL-S-19500 10-Aug-05 DO-214BA PDF

    DO-214BA

    Abstract: DO214BA JESD22-B102D J-STD-002B
    Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		MIL-S-19500 J-STD-020C, DO-214BA 2002/95/EC 2002/96/EC 26-Jun-06 DO-214BA DO214BA JESD22-B102D J-STD-002B PDF

    Contextual Info: EGF1T www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ideal for automated placement


    Original     		MIL-S-19500 J-STD-020, DO-214BA AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: EGF1T New Product Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		MIL-S-19500 J-STD-020C, 2002/95/EC 2002/96/EC DO-214BA 08-Apr-05 PDF

    marking code gb

    Abstract: DO-214BA JESD22-B102D J-STD-002B GF1J-E3
    Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


    Original     		MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 marking code gb DO-214BA JESD22-B102D J-STD-002B GF1J-E3 PDF

    diode ed 5ca

    Contextual Info: EGF1A, EGF1B, EGF1C, EGF1D www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ideal for automated placement


    Original     		J-STD-020, DO-214BA AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 diode ed 5ca PDF

    mini-melf with red band

    Abstract: GENERAL SEMICONDUCTOR diodes marking code rb
    Contextual Info: 1/2 MEDIUM POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,600V AND 1A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 1A • SURGE OVERLOAD RATING EITHER 10A OR 30A • RECTIFIER DIODES ARE PART OF GENERAL SEMICONDUCTOR’S UNIQUE ‘SUPERECTIFIER’ RANGE:


    Original     		EGL41F EGL41G mini-melf with red band GENERAL SEMICONDUCTOR diodes marking code rb PDF

    code 67a

    Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 code 67a PDF

    GF1G

    Abstract: DO-214BA JESD22-B102D J-STD-002B
    Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


    Original     		DO-214BA MIL-S-19ed 08-Apr-05 GF1G DO-214BA JESD22-B102D J-STD-002B PDF

    GF1G

    Abstract: gf1m DO-214BA DO-214BA GENERAL SEMICONDUCTOR MARKING gm 76 JESD22-B102D J-STD-002B DO214BA DO214BAGF1 gf1b
    Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


    Original     		MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 GF1G gf1m DO-214BA DO-214BA GENERAL SEMICONDUCTOR MARKING gm 76 JESD22-B102D J-STD-002B DO214BA DO214BAGF1 gf1b PDF

    GF1M

    Abstract: GF1J vishay
    Contextual Info: GF1A thru GF1M Vishay Semiconductors Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


    Original     		DO-214BA MIL-S-19500 J-STD-020C 04-Jul-05 GF1M GF1J vishay PDF

    DO-214BA

    Abstract: JESD22-B102D J-STD-002B VISHAY MARKING RJ
    Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat


    Original     		DO-214BA 08-Apr-05 DO-214BA JESD22-B102D J-STD-002B VISHAY MARKING RJ PDF

    GF1G

    Abstract: gf1m DO-214BA GF1B Gk 151 DO-214BA JESD22-B102 J-STD-002 marking code gb GF1J vishay VISHAY MARKING GM
    Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop


    Original     		MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-214BA 18-Jul-08 GF1G gf1m DO-214BA GF1B Gk 151 DO-214BA JESD22-B102 J-STD-002 marking code gb GF1J vishay VISHAY MARKING GM PDF

    88579

    Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 50 ns VF 1.0 V Tj max. 175 °C d* e t n Pate * Glass-plastic encapsulation technique is covered by patent


    Original     		DO-214BA MIL-S-19500 J-STD-020C DO-214 15-Aug-05 88579 PDF

    DO-214BA

    Abstract: JESD22-B102D J-STD-002B GENERAL SEMICONDUCTOR MARKING RJ 06 DO214BA
    Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement


    Original     		MIL-S-19500 J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 DO-214BA JESD22-B102D J-STD-002B GENERAL SEMICONDUCTOR MARKING RJ 06 DO214BA PDF

    GF1G

    Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent


    Original     		DO-214BA MIL-S-19500 J-STD-020C 10-Aug-05 GF1G PDF

    DO-214BA

    Abstract: JESD22-B102 J-STD-002 code 67a DO214BA
    Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement


    Original     		MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC 18-Jul-08 DO-214BA JESD22-B102 J-STD-002 code 67a DO214BA PDF

    marking code 67A

    Abstract: code 67a
    Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time


    Original     		MIL-S-19500 J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214BA 18-Jul-08 marking code 67A code 67a PDF

    DO-214BA

    Abstract: EGF1T EGF1THE3/67A JESD22-B102D J-STD-002B DO214BA DO214BAGF1
    Contextual Info: New Product EGF1T Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		MIL-S-19500 DO-214BA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 DO-214BA EGF1T EGF1THE3/67A JESD22-B102D J-STD-002B DO214BA DO214BAGF1 PDF

    DO214BA

    Abstract: DO-214BA RGF1K JESD22-B102D J-STD-002B DO214BAGF1 RGF1M rgf1a
    Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement


    Original     		MIL-S-19500 J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 DO214BA DO-214BA RGF1K JESD22-B102D J-STD-002B DO214BAGF1 RGF1M rgf1a PDF

    code 67a

    Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		MIL-S-19500 J-STD-020, 2002/95/EC 2002/96/EC DO-214BA, 08-Apr-05 code 67a PDF

    EGF1DHE3

    Abstract: DO214BA VISHAY MARKING ED VISHAY diode MARKING ED DO-214BA JESD22-B102 J-STD-002
    Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		MIL-S-19500 J-STD-020, DO-214BA 2002/95/EC 2002/96/EC 18-Jul-08 EGF1DHE3 DO214BA VISHAY MARKING ED VISHAY diode MARKING ED DO-214BA JESD22-B102 J-STD-002 PDF

    DO214BA

    Abstract: EGF1T-E3 DO-214BA JESD22-B102 J-STD-002
    Contextual Info: New Product EGF1T Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


    Original     		MIL-S-19500 DO-214BA J-STD-020, 2002/95/EC 2002/96/EC 18-Jul-08 DO214BA EGF1T-E3 DO-214BA JESD22-B102 J-STD-002 PDF