DO214BA GENERAL SEMICONDUCTOR Search Results

DO214BA

Abstract: DO-214BA DO-214B do214ba general semiconductor
Contextual Info: EGF1T New Product Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 1300 V IFSM 20 A trr 75 ns EAS 15 mJ Tj max. 150 °C d* e t n Pate * Glass-plastic encapsulation technique is covered by patent

DO-214BA

Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat

DO-214BA

Abstract: DO214BA JESD22-B102D J-STD-002B
Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency

Contextual Info: EGF1T www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ideal for automated placement

Contextual Info: EGF1T New Product Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency

marking code gb

Abstract: DO-214BA JESD22-B102D J-STD-002B GF1J-E3
Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop

diode ed 5ca

Contextual Info: EGF1A, EGF1B, EGF1C, EGF1D www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ideal for automated placement

mini-melf with red band

Abstract: GENERAL SEMICONDUCTOR diodes marking code rb
Contextual Info: 1/2 MEDIUM POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,600V AND 1A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 1A • SURGE OVERLOAD RATING EITHER 10A OR 30A • RECTIFIER DIODES ARE PART OF GENERAL SEMICONDUCTOR’S UNIQUE ‘SUPERECTIFIER’ RANGE:

code 67a

Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency

GF1G

Abstract: DO-214BA JESD22-B102D J-STD-002B
Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent

GF1G

Abstract: gf1m DO-214BA DO-214BA GENERAL SEMICONDUCTOR MARKING gm 76 JESD22-B102D J-STD-002B DO214BA DO214BAGF1 gf1b
Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop

GF1M

Abstract: GF1J vishay
Contextual Info: GF1A thru GF1M Vishay Semiconductors Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent

DO-214BA

Abstract: JESD22-B102D J-STD-002B VISHAY MARKING RJ
Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat

GF1G

Abstract: gf1m DO-214BA GF1B Gk 151 DO-214BA JESD22-B102 J-STD-002 marking code gb GF1J vishay VISHAY MARKING GM
Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop

88579

Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 50 ns VF 1.0 V Tj max. 175 °C d* e t n Pate * Glass-plastic encapsulation technique is covered by patent

DO-214BA

Abstract: JESD22-B102D J-STD-002B GENERAL SEMICONDUCTOR MARKING RJ 06 DO214BA
Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement

GF1G

Contextual Info: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent

DO-214BA

Abstract: JESD22-B102 J-STD-002 code 67a DO214BA
Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement

marking code 67A

Abstract: code 67a
Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time

DO-214BA

Abstract: EGF1T EGF1THE3/67A JESD22-B102D J-STD-002B DO214BA DO214BAGF1
Contextual Info: New Product EGF1T Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency

DO214BA

Abstract: DO-214BA RGF1K JESD22-B102D J-STD-002B DO214BAGF1 RGF1M rgf1a
Contextual Info: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement

code 67a

Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency

EGF1DHE3

Abstract: DO214BA VISHAY MARKING ED VISHAY diode MARKING ED DO-214BA JESD22-B102 J-STD-002
Contextual Info: EGF1A thru EGF1D Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency

DO214BA

Abstract: EGF1T-E3 DO-214BA JESD22-B102 J-STD-002
Contextual Info: New Product EGF1T Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency