DO-27 FOOTPRINT Search Results
DO-27 FOOTPRINT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| U91D122100A31 | Amphenol Communications Solutions | CXP, High Speed Input Output Connector, ENHANCED FOOTPRINT | |||
| U91D121100A31 | Amphenol Communications Solutions | CXP, High Speed Input Output Connector, ENHANCED FOOTPRINT | |||
| U91D111100131 | Amphenol Communications Solutions | CXP, High Speed Input Output Connector, ENHANCED FOOTPRINT | |||
| U91D1A01D0A31 | Amphenol Communications Solutions | CXP, High Speed Input Output Connector, ENHANCED FOOTPRINT | |||
| U91D101100130 | Amphenol Communications Solutions | CXP, High Speed Input Output Connector, ENHANCED FOOTPRINT |
DO-27 FOOTPRINT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: REVISION P DO NOT SCALE FROM THIS PRINT NOTES: TFM-1XX-XX-X-S-XX 1 . REPRESENTS A CRITICAL DIMENSION. fcA 2. MINIMUM PUSHOUT FORCE TO BE12 0 Z RETENTION FOR CONTACTS AND WELD TABS. 3. COPLANARITY: ,004[.10] = POS 02THRU26 .006[.15] = POS 27 THRU 50 4. MANUFACTURING IN PROCESS DIMENSION DESIGNED TO ACHIEVE FINAL ASSEMBLY. |
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02thru26usetfm-xx-s-01-alc-05-tmppp-15+1 | |
micrel KSz8863Contextual Info: KSZ8863MLL/FLL/RLL Integrated 3-Port 10/100 Managed Switch with PHYs Revision 1.5 General Description The KSZ8863MLL/FLL/RLL are highly-integrated 3-port switch on a chip ICs in industry’s smallest footprint. They are designed to enable a new generation of low port |
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ksz8863mll/fll/rll10/100mbpsksz8863micrel ksz8863 | |
TPCC8062-HContextual Info: TPCC8062-H MOSFETs Silicon N-Channel MOS U-MOS-H TPCC8062-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate change: QSW = 7.4 nC (typ.) |
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tpcc8062-h | |
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Contextual Info: TPCC8007 MOSFETs Silicon N-channel MOS U-MOS TPCC8007 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) (3) |
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tpcc8007 | |
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Contextual Info: TPCC8076 MOSFETs Silicon N-Channel MOS U-MOS TPCC8076 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) |
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tpcc8076 | |
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Contextual Info: TPCC8076 MOSFETs Silicon N-Channel MOS U-MOS TPCC8076 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) |
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tpcc8076 | |
TPCC8073Contextual Info: TPCC8073 MOSFETs Silicon N-Channel MOS U-MOS TPCC8073 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V) |
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tpcc8073 | |
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Contextual Info: TPCC8007 MOSFETs Silicon N-channel MOS U-MOS TPCC8007 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) (3) |
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tpcc8007 | |
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Contextual Info: TPCC8007 MOSFETs Silicon N-Channel MOS U-MOS TPCC8007 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) (3) |
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tpcc8007 | |
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Contextual Info: TPCC8073 MOSFETs Silicon N-Channel MOS U-MOS TPCC8073 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V) |
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tpcc8073 | |
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Contextual Info: TPCC8073 MOSFETs Silicon N-Channel MOS U-MOS TPCC8073 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V) |
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tpcc8073 | |
XTAL 25MHz
Abstract: osc xtal 25MHZ SMD3528 1J630 HDR1X2 SMD7343 HDR 1X2 SMD1808-A1 SMD-7343 X-TAL 25MHz
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dp83848smd7343smd0805-a1smd0603-a1+13 | |
DIODE SMD footprint
Abstract: C3240 RJ45 connector 1x2 SMD smd led 3528 SMD DIODE 3126 CON-RJ45-GIG P516CT-ND C82 diode smd 3528 SMD1808-A1
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dp83865smd0603-a1c1040c000j0603cer050vsmd3528-b1+14 | |
SP00-D311
Abstract: 908MHz schematic diagram vga to rf schematic diagram tv to vga uhf linear amplifier module schematic diagram vga to tv
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sky65142sp00-d311908mhzschematic diagram vga to rf+3 | |
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Contextual Info: TPCC8073 MOSFETs Silicon N-Channel MOS U-MOS TPCC8073 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V) |
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tpcc8073 | |
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Contextual Info: TPCC8076 MOSFETs Silicon N-Channel MOS U-MOS TPCC8076 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) |
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tpcc8076 | |
MSM8128SLMB45Contextual Info: Issue 1.0 : August 1989 MSM8128S/K/V/W/J-45/55/70 MSM8128S/K/V/W/J 128K*8MonolilhlcCM0SSRAM ADVANCE PRODUCT INFORMATION 131,072 x 8 CMOS High Speed Static RAM Pin Definition Package Type: 'S','K','V' Features Fast Access Times of 45,55,70 nS JEDEC Standard 32 pin DIL Footprint |
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msm8128s/k/v/w/j-45/55/70msm8128s/k/v/w/j150mwmil-std-883b+2 | |
telefunken ta 250
Abstract: X104K
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bzt55c300k/wd-7402530-sep-98+2 | |
89HPES12NT12G2
Abstract: PCIe Switches 89HPES32NT24AG2 "PCIe Switches" gen2 89HPES24NT6AG2 1156-BALL 324-BALL 89HPES32NT8AG2 pcie Gen2 payload
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2-10/mg/bwd/dc/pdf/r4v2pcie-21089hpes12nt12g2pcie switches+7 | |
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Contextual Info: BZM55B. Vishay Telefunken ▼ Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical BZT55B. / TZMB. • Very sharp reverse characteristic • Low reverse current level |
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bzm55bbzt55b300k/wd-74025+1 | |
jlcc 32 RContextual Info: MEM832V/J-90/12/15 Issue 1.0: September 1989 32K x 8 M o n o l i t h i c C M O S E E PR Of MEM832V/J ADVANCE PRODUCT INFORMATION 32,768 x 8 CMOS High Speed EEPROM Features Fast Access Times of 90/120/150 nS Standard JEDEC 28 pin DIL Footprint/ 32 pin JLCC Footprint |
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mem832v/j-90/12/15mem832v/j400mw64bytes+4 | |
KSZ8873
Abstract: KSZ8873MLL KSZ8873RLL IPTV basics KSZ8873 MAC mode LF-H41S 100BASE-FX ups052 KSZ8873MLLAM M9999-092309-1
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ksz8873mll/fll/rll10/100mbpsksz8873m9999-092309-1+8 | |
AgSn02
Abstract: AZ988 12 vdc motor
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az98824vdciso9001j2544+3 | |
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Contextual Info: vS ü y ▼ BZM55B. Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical BZT55B. / TZMB. • Very sharp reverse characteristic |
OCR Scan |
bzm55bbzt55b300k/wd-74025+1 | |