DO-27 FOOTPRINT Search Results

Contextual Info: REVISION P DO NOT SCALE FROM THIS PRINT NOTES: TFM-1XX-XX-X-S-XX 1 . REPRESENTS A CRITICAL DIMENSION. fcA 2. MINIMUM PUSHOUT FORCE TO BE12 0 Z RETENTION FOR CONTACTS AND WELD TABS. 3. COPLANARITY: ,004[.10] = POS 02THRU26 .006[.15] = POS 27 THRU 50 4. MANUFACTURING IN PROCESS DIMENSION DESIGNED TO ACHIEVE FINAL ASSEMBLY.

Contextual Info: TPCC8007 MOSFETs Silicon N-channel MOS U-MOS TPCC8007 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) (3)

Contextual Info: TPCC8076 MOSFETs Silicon N-Channel MOS U-MOS TPCC8076 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V)

TPCC8073

Contextual Info: TPCC8073 MOSFETs Silicon N-Channel MOS U-MOS TPCC8073 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V)

Contextual Info: TPCC8007 MOSFETs Silicon N-channel MOS U-MOS TPCC8007 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) (3)

Contextual Info: TPCC8007 MOSFETs Silicon N-Channel MOS U-MOS TPCC8007 1. Applications • Notebook PCs • Mobile Handsets 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 4.5 V) (3)

Contextual Info: TPCC8073 MOSFETs Silicon N-Channel MOS U-MOS TPCC8073 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V)

Contextual Info: TPCC8073 MOSFETs Silicon N-Channel MOS U-MOS TPCC8073 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 3.6 mΩ (typ.) (VGS = 10 V)

XTAL 25MHz

Abstract: osc xtal 25MHZ SMD3528 1J630 HDR1X2 SMD7343 HDR 1X2 SMD1808-A1 SMD-7343 X-TAL 25MHz
Contextual Info: DP83848 AspenPHY MAU ENDURO 870012627-100 Revision: D1 Bill Of Materials Revised: Wednesday, Aug 22, 2005 Item 1 2 3 4 Part 33uF 33pF 10uF 0.1uF PCB Footprint SMD7343 SMD0805-A1 SMD7343 SMD0603-A1 68uF 33uF 10uF TANT 1500pF LTM673 LED LTM673_1 CON-MII-MALE

DIODE SMD footprint

Abstract: C3240 RJ45 connector 1x2 SMD smd led 3528 SMD DIODE 3126 CON-RJ45-GIG P516CT-ND C82 diode smd 3528 SMD1808-A1
Contextual Info: 10/100/1000 Mb/s Ethernet GigPHYTER DP83865 Demo Board Cetus Revised: Sep 4, 2001 980011617-100 X3 Revision 2.2 National Semiconductor - PC & Networking Group Bill of Materials Sep 4, 2001 Item Quantity Reference Part Footprint Part Description Part Number

SP00-D311

Abstract: 908MHz schematic diagram vga to rf schematic diagram tv to vga uhf linear amplifier module schematic diagram vga to tv
Contextual Info: SKY65142 - Preliminary Data Sheet 100 – 1000 MHz; Ultra Wideband Variable Gain Amplifier Description Features Skyworks SKY65142 is an ultra-wideband Variable Gain Amplifier VGA in a small footprint module. The module contains a Variable Voltage Attenuator with Gain control range of over 20 dB. The

Contextual Info: TPCC8076 MOSFETs Silicon N-Channel MOS U-MOS TPCC8076 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V)

telefunken ta 250

Abstract: X104K
Contextual Info: B ZM 55C Vishay Telefunken ▼ Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical BZT55C. / TZMC. • Very sharp reverse characteristic • Low reverse current level

Contextual Info: BZM55B. Vishay Telefunken ▼ Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical BZT55B. / TZMB. • Very sharp reverse characteristic • Low reverse current level

Contextual Info: vS ü y ▼ BZM55B. Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical BZT55B. / TZMB. • Very sharp reverse characteristic

KSZ8873

Abstract: KSZ8873MLL KSZ8873 MAC mode
Contextual Info: KSZ8873MLL/FLL/RLL Integrated 3-Port 10/100 Managed Switch with PHYs Rev. 1.4 General Description The KSZ8873MLL/FLL/RLL are highly integrated 3-port switch on a chip ICs in the industry’s smallest footprint. They are designed to enable a new generation of low

ksz8873mll

Abstract: ksz8873rll KSZ8873RLLI KSZ8873 i2c/KSZ8873
Contextual Info: KSZ8873MLL/FLL/RLL Integrated 3-Port 10/100 Managed Switch with PHYs Rev. 1.5 General Description The KSZ8873MLL/FLL/RLL are highly integrated 3-port switch on a chip ICs in the industry’s smallest footprint. They are designed to enable a new generation of low

Contextual Info: BZM55B. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Saving space D D D D D D Very sharp reverse characteristic Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55B. / TZMB.

Contextual Info: BZM55C. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Saving space D D D D D Very sharp reverse characteristic Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55C. / TZMC.

Contextual Info: BZM55C. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Saving space D D D D D Very sharp reverse characteristic Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55C. / TZMC.

Contextual Info: BZM55B. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Saving space D D D D D D Very sharp reverse characteristic Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55B. / TZMB.

Contextual Info: BZM55C. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Saving space D D D D D Very sharp reverse characteristic Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55C. / TZMC.

BZM55B

Abstract: BZM55B2V4 BZT55B
Contextual Info: BZM55B. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Saving space D D D D D D Very sharp reverse characteristic Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55B. / TZMB.

BZM55C

Abstract: BZM55C2V4 BZT55C
Contextual Info: BZM55C. Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Saving space D D D D D Very sharp reverse characteristic Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55C. / TZMC.