DNA MARKING CODE Search Results

DNA 30 E 2200 PA

Abstract: marking 55 485 DNA30E2200 DNA30E2200PA
Contextual Info: DNA 30 E 2200 PA advanced VRRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.28 V Part number DNA 30 E 2200 PA 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

DNA 30 E 2200 PA

Abstract: DNA30E2200FE DNA30E2200PC 090 DNA DNA30E2200 marking code 2hv
Contextual Info: DNA 30 E 2200 PA advanced VRRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number DNA 30 E 2200 PA 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

DNA30EM2200PC

Abstract: DNA30E2200PC DNA30E2200FE DNA30E2200PA
Contextual Info: DNA 30 EM 2200 PC V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number DNA 30 EM 2200 PC 1 2 3 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

DNA MARKING CODE

Abstract: DNA30E2200PA DNA30E2200PC DNA30EM2200PC
Contextual Info: DNA 30 E 2200 PA V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number DNA 30 E 2200 PA 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

DNA30EM2200PC

Abstract: DNA30E2200FE DNA30E2200PC
Contextual Info: DNA 30 E 2200 PA V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number 3 1 Backside: anode Features / Advantages: Package: Applications: Housing: TO-220 Diode for main rectification For single and three phase bridge configurations

DNA30E2200PC

Abstract: DNA30EM2200PC
Contextual Info: DNA 30 E 2200 PC V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number DNA 30 E 2200 PC 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

DNA30E2200

Abstract: DNA30E2200FE DNA 30 C685 DNA30E2200PA DNA30E2200PC
Contextual Info: DNA 30 E 2200 FE tentative VRRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.24 V Part number DNA 30 E 2200 FE 5 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

DNA30E2200FE

Abstract: DNA30E2200PA DNA30EM2200PC
Contextual Info: DNA 30 E 2200 FE V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number DNA 30 E 2200 FE 5 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

Contextual Info: Diode Terminator Electrical Characteristics Supply Voltage VDD . . . . . . . . . . . . . -.3V to +7V Channel Clamp Current . . . . . . . . . . . . . ±50mA Package Power Rating @ 70°C . . . . . . . 1W Operating Temperature . . . . . . . . . . 0°C to +70°C

DNA30E2200PA

Abstract: DNA30EM2200PC
Contextual Info: DNA 30 E 2200 PC V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number 3 1 Backside: anode Features / Advantages: Package: Applications: Housing: TO-263 D2Pak Diode for main rectification For single and three phase

DNA MARKING CODE

Contextual Info: Diode Terminator Electrical Characteristics Supply Voltage VDD . . . . . . . . . . . . . -.3V to +7V Channel Clamp Current . . . . . . . . . . . . . ±50mA Package Power Rating @ 70°C . . . . . . . 1W Operating Temperature . . . . . . . . . . 0°C to +70°C

marking 406 diode -rectifier

Abstract: DNA30E2200FE 090 DNA DNA30E2200 DNA30E2200PA DNA30E2200PC
Contextual Info: DNA 30 E 2200 PC tentative VRRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number DNA 30 E 2200 PC 3 1 Backside: anode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current

DNA30E2200PC

Abstract: DNA30EM2200PC
Contextual Info: DNA 30 EM 2200 PC V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.26 V Part number 1 2 3 Backside: anode Features / Advantages: Package: Applications: Housing: TO-263 D2Pak Diode for main rectification For single and three phase

DNA30E2200FE

Abstract: DNA30E2200PA DNA30E2200PC DNA30EM2200PC
Contextual Info: DNA 30 E 2200 FE V RRM = I FAV = VF = High Voltage Standard Rectifier Single Diode 2200 V 30 A 1.25 V Part number 5 1 Backside: anode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current Very low forward voltage drop

74F00

Contextual Info: Product specification Philips Semiconductors-Signetics FAST Products Quad 2-input NAND gate FEATURE 74F00 TYPE TYPICAL PROPAGA­ TION DELAY TYPICAL SUPPLY CURRENT TOTAL 74F00 3.4ns 4.4mA • Industrial temperature range available (-40°C to +85°C) ORDERING INFORMATION

74LS245N

Abstract: Philips FA 145 74F32 I74F32D I74F32N N74F32D N74F32N 103 resistor pack DNA MARKING CODE
Contextual Info: Philips Semiconductors-Signetlcs FAST Products Product specification Quad 2-input OR gate 74F32 FEATURE • Industrial temperature range available —40°C to +85°C TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT( TOTAL) 4.1ns 8.2mA 74F32 ORDERING INFORMATION

Contextual Info: A Product Line of Diodes Incorporated ZXMN2AMC 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS= 4.5V 3.7A 300mΩ @ VGS= 2.5V

marking CODE D2B

Abstract: MARKING CODE D3B EP105 MC10EP105 MC10EP105FA MC10EP105FAR2 D3A transistor D3A marking code
Contextual Info: MC10EP105 Product Preview Quad 2-Input Differential AND/NAND The MC10EP105 is a 2–input differential AND/NAND gate. Each gate is functionally equivalent to a EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device, the EP105 is ideal for applications requiring the fastest AC performance available.

DFN3020B-8

Abstract: DNA MARKING CODE
Contextual Info: A Product Line of Diodes Incorporated ZXMN2AMC 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max RDS on max V(BR)DSS TA = 25°C (Notes 4 & 7) 120mΩ @ VGS= 4.5V 3.7A 300mΩ @ VGS= 2.5V

Contextual Info: Philip* Semiconductors-Signetics FAST Product* Product specification Quad 2-input NAND buffer open collector 74F38 FEATURE TYPE • Industrial temperature range available (-40°C to +85°C) TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT( TOTAL) 7.0ns 13mA

Contextual Info: ESH3B, ESH3C, ESH3D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • Low forward voltage, low power loss

EP105

Abstract: MC100EP105 MC10EP105
Contextual Info: MC10EP105, MC100EP105 3.3V / 5V ECL Quad 2−Input Differential AND/NAND Description The MC10/100EP105 is a quad 2−input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,

tqfp 64 thermal resistance

Abstract: marking CODE D2B
Contextual Info: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,

EP105

Abstract: MC100EP105 MC100EP105FA MC100EP105FAR2 MC10EP105 MC10EP105FA MC10EP105FAR2
Contextual Info: MC10EP105, MC100EP105 3.3V / 5VĄECL Quad 2-Input Differential AND/NAND The MC10/100EP105 is a quad 2–input differential AND/NAND gate. Each gate is functionally equivalent to the EP05 and LVEL05 devices. With AC performance much faster than the LVEL05 device,