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    DMN30H4D0L Search Results

    DMN30H4D0L Datasheets (6)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    DMN30H4D0L-13
    		Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V .25A SOT23 Original PDF 6
    DMN30H4D0L-13-52
    		Diodes MOSFET BVDSS: 251V~500V SOT23 T& Original PDF 386.65KB 6
    DMN30H4D0L-7
    		Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V .25A SOT-23 Original PDF 6
    DMN30H4D0L-7-52
    		Diodes MOSFET BVDSS: 251V~500V SOT23 T& Original PDF 386.65KB 6
    DMN30H4D0LFDE-13
    		Diodes Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 300V 0.55A 6UDFN Original PDF 384.64KB
    DMN30H4D0LFDE-7
    		Diodes Incorporated Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 300V .55A 6UDFN Original PDF 384.64KB
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    DMN30H4D0L Price and Stock

    Diodes Incorporated

    Diodes Incorporated DMN30H4D0LFDE-7

    MOSFET N-CH 300V 550MA 6UDFN
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    DigiKey () DMN30H4D0LFDE-7 Digi-Reel 7,085 1
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    DMN30H4D0LFDE-7 Cut Tape 7,085 1
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    DMN30H4D0LFDE-7 Reel 6,000 3,000
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    Avnet Americas DMN30H4D0LFDE-7 Reel 12 Weeks 3,000
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    Mouser Electronics DMN30H4D0LFDE-7 3,709
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    Newark () DMN30H4D0LFDE-7 Cut Tape 199 5
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    DMN30H4D0LFDE-7 Reel 3,000
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    TME DMN30H4D0LFDE-7 1
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    Avnet Silica DMN30H4D0LFDE-7 14 Weeks 3,000
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    Diodes Incorporated DMN30H4D0L-7

    MOSFET N-CH 300V 250MA SOT23
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    DigiKey () DMN30H4D0L-7 Digi-Reel 6,840 1
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    DMN30H4D0L-7 Cut Tape 6,840 1
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    DMN30H4D0L-7 Reel 6,000 3,000
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    Avnet Americas DMN30H4D0L-7 Reel 12 Weeks 3,000
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    Mouser Electronics DMN30H4D0L-7 22,920
    • 1 $0.83
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    Newark DMN30H4D0L-7 Cut Tape 1,815 5
    • 1 $0.74
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    TME DMN30H4D0L-7 1
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    Avnet Asia DMN30H4D0L-7 16 Weeks 3,000
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    Avnet Silica DMN30H4D0L-7 3,000 18 Weeks 3,000
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    Diodes Incorporated DMN30H4D0L-13

    MOSFET N-CH 300V 250MA SOT23
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    DigiKey () DMN30H4D0L-13 Digi-Reel 6,190 1
    • 1 $0.64
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    DMN30H4D0L-13 Cut Tape 6,190 1
    • 1 $0.64
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    DMN30H4D0L-13 Reel 10,000
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    Avnet Americas DMN30H4D0L-13 Reel 12 Weeks 10,000
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    Mouser Electronics DMN30H4D0L-13 27,503
    • 1 $0.63
    • 10 $0.47
    • 100 $0.32
    • 1000 $0.20
    • 10000 $0.17
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    Avnet Silica DMN30H4D0L-13 10,000 42 Weeks 10,000
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    New Advantage Corporation DMN30H4D0L-13 40,000 1
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    Diodes Incorporated DMN30H4D0LFDE-13

    MOSFET N-CH 300V 550MA 6UDFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () DMN30H4D0LFDE-13 Digi-Reel 1
    • 1 $0.61
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    DMN30H4D0LFDE-13 Cut Tape 1
    • 1 $0.61
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    DMN30H4D0LFDE-13 Reel 10,000
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    Avnet Americas DMN30H4D0LFDE-13 Reel 12 Weeks 10,000
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    Mouser Electronics DMN30H4D0LFDE-13
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    Diodes Incorporated DMN30H4D0L-13-52

    - Tape and Reel (Alt: DMN30H4D0L-13-52)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas DMN30H4D0L-13-52 Reel 10,000
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    DMN30H4D0L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Features ID TA = +25°C • 0.6mm profile – ideal for low profile applications • PCB footprint of 4mm 4Ω @ VGS = 10V 0.55A • Low Gate Threshold Voltage 4Ω @ VGS = 4.5V 0.55A • Low Input Capacitance


    Original     		DMN30H4D0LFDE AEC-Q101 DS36380 PDF

    Contextual Info: DMN30H4D0L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C • Low Gate Threshold Voltage  Low Input Capacitance 4Ω @ VGS = 10V 0.25A  Fast Switching Speed 0.25A  Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)


    Original     		DMN30H4D0L AEC-Q101 DS36313 PDF

    Contextual Info: NOT RECOMMENDED FOR NEW DESIGN USE DMN30H4D0L SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4424Z ISSUE 1 - NOVEMBER 1998 FEATURES * 240 Volt BVDS * Extremely low RDS on =4.3Ω * Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches


    Original     		DMN30H4D0L ZVN4424Z ZVP4424Z 400mA PDF

    Contextual Info: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 300V 4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V ID TA = +25°C 0.55A 0.55A 0.44A This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		DMN30H4D0LFDE AEC-Q101 DS36380 PDF

    Contextual Info: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 300V 4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V ID TA = +25°C 0.55A 0.55A 0.44A This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original     		DMN30H4D0LFDE AEC-Q101 DS36380 PDF

    FSV064

    Abstract: DSR8A600 DMN3025LSS
    Contextual Info: DATE: 20th February, 2014 PCN #: 2126 PCN Title: End of Life EOL for Select Discrete Devices Dear Customer: This is an announcement of change(s) to products that are currently being


    Original     		230B-T 1N5252B-T ZMM5264B-7 1N4728A-T 1N4748A-T 1N5231B-T 1N5253B-T ZMM5265B-7 1N4729A-T 1N4749A-T FSV064 DSR8A600 DMN3025LSS PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 PDF