DMG5802LFX Search Results
DMG5802LFX Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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DMG5802LFX |
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DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | Original | 154.44KB | 6 | ||
DMG5802LFX-7 |
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FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 24V 6.5A 6DFN | Original | 6 |
DMG5802LFX Price and Stock
Diodes Incorporated DMG5802LFX-7MOSFET 2N-CH 24V 6.5A 6DFN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMG5802LFX-7 | Cut Tape | 2,779 | 1 |
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DMG5802LFX-7 | Reel | 12 Weeks | 3,000 |
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DMG5802LFX-7 | 1,616 |
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DMG5802LFX-7 | 2,470 | 8 |
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DMG5802LFX-7 | 1,976 |
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DMG5802LFX-7 | 3,000 | 14 Weeks | 3,000 |
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DMG5802LFX-7 | 15,000 | 1 |
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DMG5802LFX Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 15mΩ @ VGS = 4.5V 6.5A 20mΩ @ VGS = 2.5V 5.6A V(BR)DSS • • • • • • • • 24V Low On-Resistance Low Input Capacitance Fast Switching Speed |
Original |
DMG5802LFX AEC-Q101 DS35009 | |
Contextual Info: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 15mΩ @ VGS = 4.5V 6.5A 20mΩ @ VGS = 2.5V 5.6A V(BR)DSS • • • • • • • • 24V Low On-Resistance Low Input Capacitance Fast Switching Speed |
Original |
DMG5802LFX AEC-Q101 DS35009 | |
Contextual Info: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 15mΩ @ VGS = 4.5V 6.5A 20mΩ @ VGS = 2.5V 5.6A V(BR)DSS • • • • • • • • 24V Low On-Resistance Low Input Capacitance Fast Switching Speed |
Original |
DMG5802LFX AEC-Q101 DFN50nd DS35009 | |
Contextual Info: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 15mΩ @ VGS = 4.5V 6.5A 20mΩ @ VGS = 2.5V 5.6A V(BR)DSS • • • • • • • • 24V Low On-Resistance Low Input Capacitance Fast Switching Speed |
Original |
DMG5802LFX AEC-Q101 DS35009 | |
Contextual Info: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C 15mΩ @ VGS = 4.5V 6.5A 20mΩ @ VGS = 2.5V 5.6A V(BR)DSS 24V Features • Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
DMG5802LFX DS35009 | |
Contextual Info: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 24V 15mΩ @ VGS = 4.5V 20mΩ @ VGS = 2.5V ID TA = 25°C 6.5A 5.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
DMG5802LFX AEC-Q101 -DFN5020-6 DS35009 | |
complementary MOSFET TO252
Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
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D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4 | |
Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being |
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ZXMN2B14FHÂ ZXMN2F30FHÂ ZXMN2F34FHÂ ZXMN3A01FÂ ZXMN3A02N8Â ZXMN3A04DN8Â ZXMN3A06DN8Â ZXMN3A14FÂ ZXMN3B01FÂ ZXMN3B04N8Â | |
AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
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Original |
2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 |