DMG1026UV Search Results

Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 60V 1.8Ω @ VGS = 10V 2.1Ω @ VGS = 4.5V • • • • • • • ID TA = 25°C 440mA 410mA Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C • Low On-Resistance • Low Input Capacitance 1.8Ω @ VGS = 10V 440mA • Fast Switching Speed 2.1Ω @ VGS = 4.5V 410mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features RDS ON ID TA = +25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMG1026UV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 440mA 2.1Ω @ VGS = 4.5V 410mA V(BR)DSS • • • • • • • 60V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

IPw60R125CP

Abstract: cmc tp16 IDH05S60C
Contextual Info: Application Note 1885 Author: Alan Yu ISL6731AEVAL2Z and ISL6731BEVAL2Z: High Performance Boost CCM PFC Front End for Server Power Applications Introduction Design Specifications This application note describes the design and implementation of a 390V, 750W, Continuous Conduction

Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)