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    DM2G300SH6N Search Results

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    Dawin Electronics Co Ltd

    Dawin Electronics Co Ltd DM2G300SH6N

    High Power Rugged Type IGBT Module Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel
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    DM2G300SH6N

    Abstract: DM2G300SH dm2g
    Contextual Info: DM2G300SH6N Aug. 2009 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN’S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives


    Original     		DM2G300SH6N Fig12. DM2G300SH6N DM2G300SH dm2g PDF

    dawin

    Abstract: DM2G300SH6NE DM2G300SH DM2G300SH6N
    Contextual Info: D W DAWIN Electronics TM DM2G300SH6NE Aug. 2009 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN’S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems.


    Original     		DM2G300SH6NE dawin DM2G300SH6NE DM2G300SH DM2G300SH6N PDF