DL 360 POWER Search Results
DL 360 POWER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
DL 360 POWER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
127000-1351
Abstract: 127000-2205 ITT Cannon cct 127000-2206 DLM1-156RW6 AWG28-32 DLM5-260RC CCT-DL DLM1-156RC DLM5-260
|
OCR Scan |
360-way 127000-1351 127000-2205 ITT Cannon cct 127000-2206 DLM1-156RW6 AWG28-32 DLM5-260RC CCT-DL DLM1-156RC DLM5-260 | |
APT20M45BNFRContextual Info: A d v a n c e d Pow er T e c h n o lo g y APT20M45BNFR APT20M60BNFR 200V 58A 0.045U 200V 50A 0.060Q FAST RECOVERY MOSFET FAMILY POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. |
OCR Scan |
APT20M45BNFR APT20M60BNFR APT20M60BNFR 00A/HS, 773nH, O-247AD | |
rft katalog
Abstract: transistor vergleichsliste dl 8205 VEB mikroelektronik mikroelektronik RFT "halbleiterwerk frankfurt" DL074D katalog rft TRANSISTOR KATALOG rft mikroelektronik
|
OCR Scan |
||
Contextual Info: euoec F BSM 200 GA 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE Package BSM 200 GA 120 DL 1200V 360A h Ordering Code SINGLE SWITCH |
OCR Scan |
12hing 0ct-30-1997 | |
IS-31Contextual Info: A d v a n c ed P o w er Tec h n o lo g y 9 APT30M85BNFR APT301OBNFR 300V 40A 0.085Q 300V 35A 0.100Q FAST RECOVERY MOSFET FAMILY POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS M AXIM UM RATING S Parameter APT30M85BNFR DSS Drain-Source Voltage |
OCR Scan |
APT30M85BNFR APT301OBNFR APT3010BNFR APT3010BNFR O-247AD IS-31 | |
avs08cb
Abstract: 220v ac to 9v dc switching 1A triac 139 AVS08-CB1 AVS1BC T4-0560 triac ac 220V Automatic Voltage Regulator AVS08
|
OCR Scan |
AVS08 50/60HZ AVS08CB AVS08CBI AVS08 110/220V O220AB avs08cb 220v ac to 9v dc switching 1A triac 139 AVS08-CB1 AVS1BC T4-0560 triac ac 220V Automatic Voltage Regulator | |
402PContextual Info: DIONICS INC. 6 5 R U S H M O R E S T ., W E S T B U R Y , N Y 11590 5 1 6 » 9 9 7 *7 4 7 4 HIGH VOLTAGE SILICON PNP TRANSISTOR ARRAYS Dl 402P fÿl The Dionics Dl 402P, Dl 602P and Dl 802P Series of High Voltage PNP Transistor arrays are specifically designed for plasma |
OCR Scan |
100MHZ 402P | |
Contextual Info: A dvanced P ow er Tec h n o lo g y APT10M25BNFR APT10M30BNFR 2 * WER MOS n i 100V 75A 100V 75A 0.025Q 0.030Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS «D Ail Ratings: Tc = 25°C unless otherwise specified. |
OCR Scan |
APT10M25BNFR APT10M30BNFR APT10M25/10M30BNFR O-247AD | |
BGA PACKAGE thermal resistance
Abstract: PPC604 Nippon capacitors 304X MPC604 C4 Package PPC604 instruction set
|
Original |
MPR604HSU-02 MPC604EC/D 604TM BGA PACKAGE thermal resistance PPC604 Nippon capacitors 304X MPC604 C4 Package PPC604 instruction set | |
BGA PACKAGE thermal resistance
Abstract: cmos 4008 304X MPC604 604 semiconductor Nippon capacitors
|
Original |
MPR604HSU-02 MPC604EC/D 604TM BGA PACKAGE thermal resistance cmos 4008 304X MPC604 604 semiconductor Nippon capacitors | |
igbt BSM 300 GA 160
Abstract: C400A
|
Original |
Oct-30-1997 igbt BSM 300 GA 160 C400A | |
BGA PACKAGE thermal resistance
Abstract: PPC604 instruction set Nippon capacitors 304X MPC604 MPR604HSU-02 PPC604
|
Original |
MPR604HSU-02 MPC604EC/D 604TM BGA PACKAGE thermal resistance PPC604 instruction set Nippon capacitors 304X MPC604 MPR604HSU-02 PPC604 | |
Contextual Info: BSM 50 GB 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 50 GB 120 DL 1200V 90A IC Package Ordering Code HALF BRIDGE 1 Maximum Ratings |
Original |
Oct-30-1997 | |
Contextual Info: BSM 50 GD 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 50 GD 120 DL 1200V 80A IC Package Ordering Code |
Original |
Oct-30-1997 | |
|
|||
igbt module bsm 200 gb 120 dl
Abstract: igbt module bsm 100 gb 60 dl
|
Original |
Q67050-A1002-A70 Oct-27-1997 igbt module bsm 200 gb 120 dl igbt module bsm 100 gb 60 dl | |
APT4016SNContextual Info: D D3PAK G APT4016SN S 400V 31.0A 0.16Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT4016SN UNIT 400 Volts 31 Continuous Drain Current @ TC = 25°C |
Original |
APT4016SN APT4016SN | |
Contextual Info: D D3PAK G APT5020SN S 500V 28.0A 0.20Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT5020SN UNIT 500 Volts 28 Continuous Drain Current @ TC = 25°C |
Original |
APT5020SN APT5020SN | |
D 304X transistor
Abstract: BGA PACKAGE thermal resistance Nippon capacitors BGA PACKAGE thermal profile powerpc motorola 304X MPC604 SE42 ppc604 PPC604 instruction set RC 221 ABB
|
Original |
MPR604HSU-02 MPC604EC/D 604TM D 304X transistor BGA PACKAGE thermal resistance Nippon capacitors BGA PACKAGE thermal profile powerpc motorola 304X MPC604 SE42 ppc604 PPC604 instruction set RC 221 ABB | |
APT20M13PVRContextual Info: APT20M13PVR 200V 120A 0.013Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
Original |
APT20M13PVR APT20M13PVR | |
5020BNF
Abstract: 5020bn CR diode transient APT5022BNF 5022BNF APT5020BNF 0257E 5022B
|
OCR Scan |
APT5020BNF APT5022BNF 5020BNF 5022BNF O-247AD 5020bn CR diode transient 0257E 5022B | |
dm 465
Abstract: C3-P1.2RA 1R0 c3p1 MITSUMI transformers
|
Original |
||
APT6030SNContextual Info: D D3PAK G APT6030SN S 600V 23.0A 0.30Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT6030SN UNIT 600 Volts 23 Continuous Drain Current @ TC = 25°C |
Original |
APT6030SN APT6030SN | |
Contextual Info: MITSUMI Power Inductors CP Series Coils, Transformers OUTLINE Compacts, low-height, and high current power inductor used in digital devices and mobile phones. Several dimensions are available. C3-P Series C4-P Series FEATURES 1. Low DCR by magnetically shielded structure with magnetic resin. |
Original |
||
Contextual Info: MITSUMI Power Inductors CP Series Coils, Transformers OUTLINE Compacts, low-height, and high current power inductor used in digital devices and mobile phones. Several dimensions are available. C3-P Series C4-P Series FEATURES 1. Low DCR by magnetically shielded structure with magnetic resin. |
Original |