DK51 NPN Search Results

DK51 NPN Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TPCP8513		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet
TTC5810		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini	Datasheet
TTC019		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini	Datasheet

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DK51

Abstract: DK-51 dk51 npn npn 600v to92
Contextual Info: DK51 硅 NPN 大功率开关晶体管 •用途主要用于节能灯日光灯电子镇流器电路及其它开关、振荡电路。 BC E BCE TO-92 TO-126 ■极限参数项目符号极限值单位集电极-发射极电压 VCEO 400 V 集电极-基极电压

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O-126 O-920 O-1261 DK51 DK-51 dk51 npn npn 600v to92