DIRECTI Search Results

SM16D14

Abstract: TOSHIBA THYRISTOR
Contextual Info: SM16 D,G 14 BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC P OWER C O N T R O L A P P LICATIONS. Unit in mm 3 á hr (ZiatxOMAX. FEATURES: . R e p e t i t i v e P e a k O f f - S t a t e V o l t a g e : V[)RM= 2 0 0 — 400V . R .M.S O n - S t a t e C u r rent

Contextual Info: DIRECTIONAL COUPLER .19 MAX IRAK MICROWAVE DIRECTIONAL COUPLER CPL / 1 0 B E - 0 8 SPECIFICATIONS: FREQUENCY LOSS COUPLING VSWR DIRECTIVITY POWER IN O- -O OUT TR4K MICROWAVE MATERIAL □ STANDARD □ SPECIAL • » o • BASE COVER MARKING FINISH FR— 4 VECTRA

thyristor

Abstract: reverse-conducting thyristor Gate Turn-off Thyristor Thyristor triac
Contextual Info: 7. GRAPHICAL SYMBOL Type P Gate Thyristor SCR Bi Directional Triode Thyristor (Triac) Reverse-Conducting Thyristor Gate Turn-off Thyristor Graphical Symbol - ^ T,- 1 - - N-Gate Thyristor (PUT) 84 V T'

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC REV ISIONS D I ST 00 CM RESERVED. LTR DE S C R I P T I O N EC 0 G3 B P OS T TO W I T H S T A N D IN BOTH DIRECTIONS TOLERANCES MEASURED

GE C20C

Abstract: SM16G1 SM16G16 ge737
Contextual Info: BI-DIRECTIONAL TRIODE THYRISTOR SM16 D,G 16 SILICON PLANAR TYPE Unit AC POWER CONTROL APPLICATIONS. in mm p 1 & 8 M AX , FE ATU R E S : . Repetitive Peak Off-State Voltage : Vqrji=200 — 400V . R.M.S O n - S t a t e C u r r e n t : It (RMS)= 16A . Su i t a b l e

SM8GZ46

Abstract: SM8DZ46 SM8JZ46 Bi-Directional Triode Thyristor SM8DZ
Contextual Info: BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8 D, G,J Z46 AC POWER C O N T R O L A P PL IC A T I O N S . Unit in mm FEATURES : . Repetitive Peak Off-State Voltage v . R.M.S On-State Current JT(RMS)= 8A D R M = 200~- 600V . 4 Trigger Mode Guarantee

M12JZ47

Abstract: M12GZ47 M12j 2G74 M12JZ4 SM12G M12GZ SM12JZ47 SM12JZ47A
Contextual Info: SM12 G,J Z47 SM12(G,J)Z47A BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit . Repetitive Peak Off-State Voltage :V d RM=400, 600V . R.M.S On-State Current :I-p(r m s )= 1 2A in mm . High Commutating (dv/dt) . Isolation Voltage

TOSHIBA THYRISTOR

Abstract: SM6J44
Contextual Info: BI-DIRECTIONAL TRIODE THYRISTOR SM6 G,J 44 SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit in mm . Repetitive Peak Off-State Voltage: V d RM=400,600V . R.M.S On-State Current : It (R M S ) = 6A . Dual in Line Type MAXIMUM RATINGS SYMBOL CHARACTERISTIC

Contextual Info: TEXAS INSTR A S I C / M E M O R Y b4E D • 8^1725 ODflEbCH 3 3b M J I SN74ABT7816 64 X 36 X 2 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCBS129-JULY1992 Free-Running CLKA and CLKB May Be Asynchronous or Coincident Two Independent 64 x 36 Clocked FIFOs Buffering Data in Opposite Directions

SM8G41

Abstract: SM8D41 SM8G4 SM8J41
Contextual Info: S M 8 D , G , BI-DIRECTIONAL TRIODE THYRISTOR 4 1 J SILICON PLANAR TYPE AC POWER CONTR O L A P P L I C A T I O N S . Unit in m m FEATURES: 1 0 .3 M AX . . Repetitive Peak Off-State Voltage : V q r h = 2 0 0 ~ 600V . R.M.S O n - S t a t e C u r r e n t : It (r m s )= 8A

diagram of ic ta7736p

Abstract: floppy motor driver TA77 TC9142P 0-12V motor 12v TA7736P TA7736P/F
Contextual Info: TA7736P/F DC MOTOR DRIVER IC. The TA7736P is a 3-phase Bi-directional motor driver IC. It designed for use VCR, tape deck, floppy disk and record player motor drivers. It contains output power drivers, position sensing circuits, control amplifier and CW/CCW control

Contextual Info: S6903G,S6903J TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE S6903G, S6903J AC POWER CONTROL APPLICATIONS Unit: mm z High Rush Current Capability Optimal for controlling actuators where high rush current may flow : ITRM = 120A n = 100k cycle, Tc = 45°C

Contextual Info: TQM679002A Data Sheet 802.11b/g/n WLAN/BT Front-End Module Features Block Diagram BTSW RXSW TXSW • Rxp Rxn PABC Balun ANT   PAEN Tx in Pdetect    PA  Directional Detector BTH Fully Integrated, 802.11b/g/n + BT front-end module Internally matched input/output

Contextual Info: TESDQ5V0 Bi-directional ESD Protection Diode Small Signal Diode DFN1006 0402 Features —Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —100W Peak Pulse Power per Line (tp=8/20 s) —Protects one birectional I/O line

SMD 0402

Contextual Info: 2381 553 2.6/MLV0402E3.3T Vishay BCcomponents SMD 0402 Multilayer Varistor FEATURES • Surface mount multilayer surge suppressor  Inherent directional clamping  Excellent energy/volume ratio  Suitable for reflow soldering  Compliant to RoHS directive 2002/95/EC

RC32 VISHAY

Abstract: crc50
Contextual Info: RCMM Vishay Sfernice Molded Metal Film Resistors FEATURES • 0.25 W to 1 W at 70 °C • NF C 83-230 RC21U-31U-41U-32 • CECC 40 100 • High insulation > 107 MΩ • Great mechanical strength • Termination = Pure matte tin • Compliant to RoHS directive 2002/95/EC

Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive

Contextual Info: SRAF520 thru SRAF5150 Taiwan Semiconductor CREAT BY ART Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: QFN Package INA210, INA211 INA212, INA213 INA214 SC70 Package www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 Voltage Output, High or Low Side Measurement, Bi-Directional Zerø-Drift Series Current-Shunt Monitor Check for Samples: INA210, INA211, INA212, INA213, INA214

SUP90P06-09L

Contextual Info: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS

DA3X107K

Abstract: DA2J10
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DA3X107K Silicon epitaxial planar type For high speed switching circuits DA2J107 in Mini3 type package • Features  Package  High reverse voltage VR  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: SR202 thru SR220 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Vishay DaTE CODE tsop-6

Abstract: si3410
Contextual Info: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SA5.0 thru SA170CA Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :