DIP4 MS Search Results

211EH

Abstract: AQY216 AQY214EH AQY21 AQY211EH AQY211EHA AQY212EHAX AQY212EHA AQY216EHA AQY216EHAX
Contextual Info: GU-E 1 Form A AQY21PEH TESTING High cost-performance DIP4-pin type with reinforced insulation 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 GU-E 1 Form A (AQY21PEH) FEATURES TYPICAL APPLICATIONS 1. Reinforced insulation of 5,000 V

11-5B2

Abstract: E67349 TLP224G TLP224G-2
Contextual Info: TLP224G,TLP224G-2 TOSHIBA Photocoupler Photorelay TLP224G,TLP224G-2 Modems PBX Telecommunications Unit: mm TLP224G The TOSHIBA TLP224G series consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a 4 pin DIP DIP4 , which is suitable for equipment for high tech communications, including

210HL

Abstract: AQY210HL AQY210HLA AQY210HLAX AQY210HLAZ
Contextual Info: GU 1 Form A Current Limiting AQY210HL TESTING DIP4-pin type with current limiting and reinforced insulation GU 1 Form A Current Limiting (AQY210HL) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 1. Current Limiting Function

AQY272

Abstract: AQY272AX AQY274 AQY274A AQY275 AQY275A AQY277 AQY277A AQY272A
Contextual Info: PD 1 Form A AQY27P VDE Flat Power-DIP4-pin type with high capacity up to 2A load current PD 1 Form A (AQY27P) AQY27P 8.8 .346 9.3 .366 3.9 .154 8.8 .346 9.3 .366 3.7 .146 mm inch 1 4 2 3 FEATURES TYPICAL APPLICATIONS 1. Flat-Packaged type (W) 8.8 x (D) 9.3 × (H) 3.9 mm

210HL

Contextual Info: GU 1 Form A Current Limiting AQY210HL TESTING DIP4-pin type with current limiting and reinforced insulation GU 1 Form A Current Limiting (AQY210HL) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 4. Controls low-level analog signals

Contextual Info: TLP224G,TLP224G-2 TOSHIBA Photocoupler Photorelay TLP224G,TLP224G-2 Modems PBX Telecommunications Unit: mm TLP224G The TOSHIBA TLP224G series consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a 4 pin DIP DIP4 , which is suitable for equipment for high tech communications, including

412EH

Abstract: AQY412EHAX 414EH AQY410EH AQY410EHA AQY412EH AQY414EH AQY414EHA
Contextual Info: GU-E 1 Form B AQY41PEH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41PEH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 1. High cost-performance type of PhotoMOS relay 1 Form B output

DIP-4P

Contextual Info: GU-E 1 Form A AQY21❍EH TESTING High cost-performance DIP4-pin type with reinforced insulation 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 RoHS compliant GU-E 1 Form A (AQY21❍EH) FEATURES TYPICAL APPLICATIONS 1. Reinforced insulation of 5,000 V

412EH

Abstract: AQY412EHA AQY412EHAX aqy410 AQY414EH
Contextual Info: GU-E 1 Form B AQY41PEH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41PEH) AQY41PEH FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 CAD Data mm inch 1 4 2 3

AQY275

Abstract: AQY275AX AQY27 AQY272 AQY272A AQY272AX AQY274 AQY274A AQY275A AQY277
Contextual Info: PD 1 Form A AQY27❍ VDE Flat Power-DIP4-pin type with high capacity up to 2A load current 8.8 .346 9.3 .366 3.9 .154 8.8 .346 9.3 .366 3.7 .146 mm inch 1 4 2 3 PD 1 Form A (AQY27❍) FEATURES TYPICAL APPLICATIONS 1. Flat-Packaged type (W) 8.8 x (D) 9.3 × (H) 3.9 mm

Contextual Info: GU-E 1 Form A AQY21EH High cost-performance DIP4-pin type with reinforced insulation GU-E 1 Form A (AQY21EH) AQY21EH 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 CAD Data CAD Data mm inch 1 4 2 3 FEATURES TYPICAL APPLICATIONS 1. Reinforced insulation of 5,000 V

412EH

Abstract: AQY412EHAZ gu-e 414EH 80-85 applications AQY412EH AQY410EH AQY410EHA AQY414EH AQY414EHA
Contextual Info: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✤✦✪ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU-E 1 Form B AQY41❍EH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation

AQY216

Abstract: AQY216EHAX aqy210 211eh
Contextual Info: GU-E 1 Form A AQY21PEH TESTING High cost-performance DIP4-pin type with reinforced insulation GU-E 1 Form A (AQY21PEH) AQY21PEH 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 CAD Data mm inch 1 4 2 3 FEATURES TYPICAL APPLICATIONS 1. Reinforced insulation of 5,000 V

AQY272AX

Abstract: AQY27P
Contextual Info: PD 1 Form A AQY27P VDE Flat Power-DIP4-pin type with high capacity up to 2A load current PD 1 Form A (AQY27P) AQY27P 8.8 .346 9.3 .366 3.9 .154 8.8 .346 9.3 .366 3.7 .146 FEATURES TYPICAL APPLICATIONS 1. Flat-Packaged type (W) 8.8 x (D) 9.3 × (H) 3.9 mm

Contextual Info: GU-E 1 Form B AQY41❍EH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41❍EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 4. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of

211EH

Abstract: AQY212EH AQY216EHA AQY216EHAX AQY211EH AQY212EHA AQY211EHA AQY216EH AQY212ehax AQY216EHAZ
Contextual Info: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✤✥★ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU-E 1 Form A AQY21❍EH TESTING High cost-performance DIP4-pin type with reinforced insulation 4.78 .188 6.4 .252 3.2 .126 4.78 .188

Contextual Info: PD 1 Form A AQY27❍ VDE Flat Power-DIP4-pin type with high capacity up to 2A load current 8.8 .346 9.3 .366 3.9 .154 8.8 .346 9.3 .366 3.7 .146 mm inch 1 4 2 3 PD 1 Form A (AQY27❍) FEATURES TYPICAL APPLICATIONS 1. Flat-Packaged type (W) 8.8 x (D) 9.3 × (H) 3.9 mm

Contextual Info: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✥✧✧ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M PD 1 Form A AQY27❍ Flat Power-DIP4-pin type with high capacity up to 2A load current 8.8 .346 9.3 .366 3.9 .154 8.8 .346 9.3 .366

ARM1136J-S

Abstract: mosfet 2000v MP6622 TLP363J TLP666J MP66 tlp363
Contextual Info: C O N T E N T S INFORMATION 東芝半導体情報誌アイ 2005年1月号 1 高性能マイクロプロセッサ・コア 「ARM1136J-S」のライセンス契約を締結 .4 VOLUME 150 今月の新製品情報 DIP4ピン型ZCフォトトライアックカプラ.2

TCET1100G

Abstract: tcet1109 TCET1102
Contextual Info: VISHAY TCET1100/ TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature Features • • • • • Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection Low temperature coefficient of CTR CTR offered in 9 groups

smd optocoupler marking 1

Abstract: smd optocoupler marking smd optocoupler marking device 1 vo615a-9 VO615A-6 VO615A-1X006 smd optocoupler smd optocoupler marking 600 vo615a-4 dip4
Contextual Info: VO615A Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated C FEATURES E • CTR offered in 9 groups • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110/resp. 60664 • Climatic classification 55/110/21 (IEC 60068 part 1)

OPTO-coupler 816

Abstract: optocoupler pc 817 817 Optocoupler datasheet 817 optocoupler 817 opto-coupler ic circuit diagram optocoupler 817 optocoupler C 817 optocoupler 817 circuit optocoupler C 814 ec 817
Contextual Info: TCET1100/TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperarure FEATURES • Extra low coupling capacity - typical 0.2 pF • High common mode rejection • Low temperature coefficient of CTR C E 4 3 • CTR offered in 9 groups

Contextual Info: SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS Features • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS • High Collector-emitter Voltage, VCEO =

Contextual Info: TCET1100/ TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature Features • • • • • Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection Low temperature coefficient of CTR CTR offered in 9 groups