DIODES IR 5 Search Results

RB520S-30

Contextual Info: RB520S-30 SCHOTTKY BARRIER DIODES PRODUCT SUMMARY SOD-523 Plastic-Encapsulate Diodes SOD-523 + FEATURES Small surface mounting type Low IR. IR = 0.1 uA High reliability - Pb-free; RoHS-compliant MARKING: B MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o

1N914B

Contextual Info: 1N914B Signal Diode. Max Breakdown Voltage BV = 75V IR = 5.0uA - BV = 100V(IR. Page 1 of 1 Enter Your Part # Home Part Number: 1N914B Online Store 1N914B Diodes Signal Diode. Max Breakdown Voltage BV = 75V(IR = Transistors 5.0uA) - BV = 100V(IR = 100uA).

Contextual Info: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)

Jiangsu Changjiang Electronics Technology

Abstract: rb520s30 RB520S-30 Ir 523 A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB520S-30 SOD-523 Schottky barrier Diodes + FEATURES z Small surface mounting type z Low IR. IR = 0.1 uA z High reliability - MARKING: B Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB520S-30 SOD-523 Schottky barrier Diodes + FEATURES z Small surface mounting type z Low IR. IR = 0.1 uA z High reliability - MARKING: B Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

infrared burglar alarm

Abstract: 1R333 infrared burglar alarm of remote control IR333 IR204 GALLIUM ARSENIDE ir detector IR204/IR333
Contextual Info: EVERLIGHT ELECT RONICS EH ì> 3 M1 5 7 D 3 DODOQOb □ H E V E C m INFRARED EMiniNG DIODES INFRARED EMTTING DIODES MODEL: IR 20 4/IR 3 33 GENERAL DESCRIPTION The IR204 and IR333 are high power solution grown Epitaxial Gallium Arsenide In­ frared Emitting Diodes encapsulated in blue transparent plastic T-t or T-13/<

BL-L512PD

Abstract: GaN photo diode PHOTO GAP DETECTOR BL-L512
Contextual Info: SILICON PHOTO DIODES BL-L512PD Features: 5.1*3.0*7.4mm SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity. Small junction capacitance. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR

FMP G2FS

Abstract: G2GS FMQ-G1FS 10F60
Contextual Info: 4-6 Damper Diodes Damper Diodes ●For TV VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A) IR IR(H)

PHOTO GAP DETECTOR

Abstract: BL-L4802PD infrared 5mm 940nm GaAs blue light PHOTO detector
Contextual Info: SILICON PHOTO DIODES BL-L4802PD Features: 5*3.8*6.5mm SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity. Small junction capacitance. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitter.

FMPG2F

Abstract: G2GS ru4d
Contextual Info: 4-6 Damper Diodes Damper Diodes ●For TV VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A) IR IR(H)

Contextual Info: ROITHNER LASERTECHNIK PRESENTS NEW MID-IR LASER DIODES 2.0 um and 2.3 um MID-IR laser diodes, 5.6 mm with monitor photodiode, room temperature operation ! RLTCM-2010D, 2.0 um, 10 mW cw, 5.6 mm with monitor photodiode, datasheet on request RLTCM-2025D, 2.0 um, 25 mW cw, 5.6 mm with monitor photodiode, datasheet

IR Blue Light infrared

Abstract: BG39
Contextual Info: IR-B2 SIEMENS Infrared Indicator Card APPLICATIONS • Check output of IR LEDs and IR laser diodes • In test Set-ups, remote control devices, tone transmitters, light reflection switches, light pens, optical fiber systems, etc. • Evaluate IR radiant Intensity and radiation

1N43

Abstract: Zener 1N757A Diode zener Diode But 1N4370A 1N4371A 1N4372A 1N746A 1N747A 1N748A 1N749A
Contextual Info: LESHAN RADIO COMPANY, LTD. 1N43 1N7 SERIES ZENER DIODES 1N43 1N7 1N43 1N7 SERIES ZENER DIODES Max Reverse Leakage Current T A = 25°C T A = 150°C IR @VR=1V IR @VR=1V µA µA 1N4370A 2.4 30 150 100 200 1N4371A 2.7 30 135 75 150 1N4372A 3.0 29 120 50 100 1N746A

3gu diode

Abstract: fmp2fu FMQ2FU crt 1700 FMV-3HU FMP-3FU FMQ2FUR diode FMP3FU diode TO-3PF diode FMP
Contextual Info: 4-6 Damper Diodes 4-6-2 DM Damper Diodes Part No. Application For TV For CRT Display trrq : IR=IF 90% Recovery Point trrw : IR=2xIF 75% Recovery Point VRM IF trrq trrw V (A) (µS) (µS) Package FMV-3FU 1500/600 5.0 4.0/0.4 1.3/0.18 TO-3PF FMV-3GU 1700/600

UC-255

Abstract: transistor marking lv3 WSD420
Contextual Info: WEITRON WSD420 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 100m AMPERES 40 VOLTS Features: *Low Power Rectification *Small Surface Mounting Type *Low I R IR =50nA Typ *High Reliability 3 Description: These schottky barrier diodes are designed for high speed

RB050M-30

Abstract: RSX201VA-30 RB080L-30 RSBC6.8CS RSAC6.8CS RB055L-30 RB050M RSAC16CS EDZ TE61 27B ROHM tfz diodes
Contextual Info: 2010 Product Catalog Discrete Semiconductors Schottky Barrier Diodes Zener Diodes Schottky Barrier Diodes Original fine process technology and a unique device structure have enabled ROHM to develop Schottky barrier diodes that feature simultaneously low VF and IR - an unprecedented accomplishment

MMBV2107

Abstract: MMBD701LT1 MMBV609LT1 SMD BR 32 IFM450 BAV170LT c30 diode BAS116LT1 BAS21LT1 BAV170LT1
Contextual Info: MX-MICROELECTRONICS SOT-23 PACKAGE • • • • • • • 片式开关二极管 SMD SWITHING DIODES • 片式开关二极管 SMD SWITHING DIODES SOT-23 SMD VARACTOR DIODES 型号 TYPE V(BR) Vdc Min Vdc IR A top VF Vdc IF MA Min IR trr ns PIN 123 Max

RSX101M-30

Contextual Info: Low VF / Low IR / High ESD Protection Next-generation Schottky Barrier Diodes RSX* series 35% size reduction VR-I VF 50% Improvement in IR 1000 RSX101M-30 RB491D 100 (ROHM’s existing part) IR(µA) IF(mA) 100 VF (ROHM’ RSX101M-30 10 10 1 0.0 1 0.1 0.2

BAS40

Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06
Contextual Info: Product Catalog > Diodes > Small Signal Schottky Diodes > Part Number BAS40 product family SMALL SIGNAL SCHOTTKY DIODES package type SOT-23 VRM PRV 40V Ifsm 600mA IF(AV) 200mA @Vf 1V @If 40mA Trr 5nS IR 200nA @VR 30V Package Qty Tape : 3K/Reel, 120K/Ctn;

SD101AWS

Abstract: SD101BWS SD101CWS
Contextual Info: Product Catalog > Diodes > Small Signal Schottky Diodes > Part Number SD101BWS product family SMALL SIGNAL SCHOTTKY DIODES package type SOD-323 VRM PRV 50V Ifsm 2.0A IF(AV) @Vf 0.40V @If 1mA Trr 1.0nS IR 200nA @VR 50V Package Qty Tape : 3K/Reel , 120K/Ctn;

SD101AW

Abstract: SD101BW SD101CW
Contextual Info: Product Catalog > Diodes > Small Signal Schottky Diodes > Part Number SD101BW product family SMALL SIGNAL SCHOTTKY DIODES package type SOD-123 VRM PRV 50V Ifsm 2.0A IF(AV) @Vf 0.40V @If 1mA Trr 1.0nS IR 200nA @VR 50V Package Qty Tape : 3K/Reel , 120K/Ctn;

high voltage avalanche diode

Contextual Info: Diodes Diodes for High Switching Frequencies Diodes for General Pur­ pose Applications Fast Recovery Epitaxial Diodes HiPerFRED; FRED Rectifier Diodes Power sw itches (IGBT, M O SFET, BJT, GTO) for applications in electronics are only as good as th e ir associated fre e ­

BAS40

Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06
Contextual Info: Product Catalog > Diodes > Small Signal Schottky Diodes > Part Number BAS70 product family SMALL SIGNAL SCHOTTKY DIODES package type SOT-23 VRM PRV 70V Ifsm 600mA IF(AV) 200mA @Vf 1V @If 15mA Trr 5nS IR 200nA @VR 50V Package Qty Tape : 3K/Reel, 120K/Ctn;

RB160L

Abstract: RB160L-40
Contextual Info: RB160L-40 Diodes Schottky barrier diode RB160L–40 zExternal dimensions Units : mm zApplications High frequency rectification For switching power supply. 3 4.5±0.2 zFeatures 1) Compact power mold type (PMDS) 2) Low IR. (IR=5mA Typ.) 3) High reliability