DIODES IR 5 Search Results
DIODES IR 5 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 |
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Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
DIODES IR 5 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RB520S-30Contextual Info: RB520S-30 SCHOTTKY BARRIER DIODES PRODUCT SUMMARY SOD-523 Plastic-Encapsulate Diodes SOD-523 + FEATURES Small surface mounting type Low IR. IR = 0.1 uA High reliability - Pb-free; RoHS-compliant MARKING: B MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o |
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RB520S-30 OD-523 OD-523 200mA RB520S-30 | |
1N914BContextual Info: 1N914B Signal Diode. Max Breakdown Voltage BV = 75V IR = 5.0uA - BV = 100V(IR. Page 1 of 1 Enter Your Part # Home Part Number: 1N914B Online Store 1N914B Diodes Signal Diode. Max Breakdown Voltage BV = 75V(IR = Transistors 5.0uA) - BV = 100V(IR = 100uA). |
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1N914B 1N914B 100uA) DO-35 com/1n914b | |
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Contextual Info: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins) |
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MA111 MA176WK AMA2S111 MA177/A MA112Ã MA180 MA113 pins0/178 DO-35/34 D31/27 | |
Jiangsu Changjiang Electronics Technology
Abstract: rb520s30 RB520S-30 Ir 523 A
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OD-523 RB520S-30 OD-523 200mA Jiangsu Changjiang Electronics Technology rb520s30 RB520S-30 Ir 523 A | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes RB520S-30 SOD-523 Schottky barrier Diodes + FEATURES z Small surface mounting type z Low IR. IR = 0.1 uA z High reliability - MARKING: B Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ |
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OD-523 RB520S-30 OD-523 200mA | |
infrared burglar alarm
Abstract: 1R333 infrared burglar alarm of remote control IR333 IR204 GALLIUM ARSENIDE ir detector IR204/IR333
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IR204/IR333 IR204 IR333 IR204 IR333 150mW 100mA infrared burglar alarm 1R333 infrared burglar alarm of remote control GALLIUM ARSENIDE ir detector IR204/IR333 | |
PHOTO GAP DETECTOR
Abstract: BL-L4802PD infrared 5mm 940nm GaAs blue light PHOTO detector
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BL-L4802PD 880nm 940nm 430nm/Blue 470nm/Blue 505nm/Ultra 525nm/Ultra PHOTO GAP DETECTOR BL-L4802PD infrared 5mm 940nm GaAs blue light PHOTO detector | |
FMPG2F
Abstract: G2GS ru4d
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Contextual Info: ROITHNER LASERTECHNIK PRESENTS NEW MID-IR LASER DIODES 2.0 um and 2.3 um MID-IR laser diodes, 5.6 mm with monitor photodiode, room temperature operation ! RLTCM-2010D, 2.0 um, 10 mW cw, 5.6 mm with monitor photodiode, datasheet on request RLTCM-2025D, 2.0 um, 25 mW cw, 5.6 mm with monitor photodiode, datasheet |
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RLTCM-2010D, RLTCM-2025D, RLTCM-2307D, RLTCM-2310D, RLTCM-2325D, | |
IR Blue Light infrared
Abstract: BG39
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1N43
Abstract: Zener 1N757A Diode zener Diode But 1N4370A 1N4371A 1N4372A 1N746A 1N747A 1N748A 1N749A
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200mA 200mA. 1N4372A 1N746A 1N747A 1N748A 1N749A 1N750A 1N751A 1N43 Zener 1N757A Diode zener Diode But 1N4370A 1N4371A 1N4372A 1N746A 1N747A 1N748A 1N749A | |
diode cross reference
Abstract: MA4P789-287 SMPP biasing circuit pin diode cross reference MA4P282-287 MA4P277CK-287 MA4P282 MA4P274 MA4P274-287 MA4P275
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OT-23 OT-143 OT-323 OD-323 MA4P275 MA4P789 diode cross reference MA4P789-287 SMPP biasing circuit pin diode cross reference MA4P282-287 MA4P277CK-287 MA4P282 MA4P274 MA4P274-287 | |
UC-255
Abstract: transistor marking lv3 WSD420
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WSD420 OT-23 OT-23 UC-255 transistor marking lv3 WSD420 | |
MMBV2107
Abstract: MMBD701LT1 MMBV609LT1 SMD BR 32 IFM450 BAV170LT c30 diode BAS116LT1 BAS21LT1 BAV170LT1
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OT-23 OT-23) BAL99LT1 BAS16LT1 BAS21LT1 BAS116LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAV170LT1 MMBV2107 MMBD701LT1 MMBV609LT1 SMD BR 32 IFM450 BAV170LT c30 diode BAS116LT1 BAS21LT1 BAV170LT1 | |
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BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06
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BAS40 OT-23 600mA 200mA 200nA 120K/Ctn; BAS70 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06 | |
SD101AWS
Abstract: SD101BWS SD101CWS
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SD101BWS OD-323 200nA 120K/Ctn; SD101AWS SD101CWS SD101AWS SD101BWS SD101CWS | |
SD101AW
Abstract: SD101BW SD101CW
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SD101BW OD-123 200nA 120K/Ctn; SD101AW SD101CW SD101AW SD101CW SD101BW | |
high voltage avalanche diodeContextual Info: Diodes Diodes for High Switching Frequencies Diodes for General Pur pose Applications Fast Recovery Epitaxial Diodes HiPerFRED; FRED Rectifier Diodes Power sw itches (IGBT, M O SFET, BJT, GTO) for applications in electronics are only as good as th e ir associated fre e |
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BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06
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BAS70 OT-23 600mA 200mA 200nA 120K/Ctn; BAS40 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06 | |
RB160L
Abstract: RB160L-40
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RB160L-40 RB160L OD-106 RB160L-40 | |
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Contextual Info: RB160L-40 Diodes Schottky barrier diode RB160L–40 zExternal dimensions Units : mm zApplications High frequency rectification For switching power supply. 3 4.5±0.2 zFeatures 1) Compact power mold type (PMDS) 2) Low IR. (IR=5mA Typ.) 3) High reliability |
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RB160L-40 RB160Lâ OD-106 | |
BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06
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BAS70-06 OT-23 600mA 200mA 200nA 120K/Ctn; BAS40 BAS70 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06 | |
s6 schottky
Abstract: SD103AW SD103BW SD103CW
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SD103BW OD-123 350mA 120K/Ctn; SD103AW SD103CW s6 schottky SD103AW SD103BW SD103CW | |
BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06 schottky barrier diode 40v 40mA
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BAS40-06 OT-23 600mA 200mA 200nA 120K/Ctn; BAS40 BAS70 OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 BAS70 BAS70-04 BAS70-05 BAS70-06 schottky barrier diode 40v 40mA | |