DIODES HIGH FREQUENCY Search Results

Contextual Info: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.

Contextual Info: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.

Contextual Info: MM17 thru MM110 Surface Mount Schottky Diodes SMALL SIGNAL SCHOTTKY DIODES 1.0 AMPERES 20-100 VOLTS Features: * High current capability * High surge current capability * Low forward voltage drop * For use in low voltage, high frequency inverters free wheeling ,and polarity protection applications

GC4430

Abstract: digital phase shifters GC4410 GC4412 GC4432-30 gc4495 GC4400 GC4411 GC4413 GC4200
Contextual Info: GC4410 – GC4495 TM CONTROL DEVICES – HIGH VOLTAGE PIN DIODES RoHS Compliant DESCRIPTION KEY FEATURES The GC4400 series are high voltage, high power cathode base PIN diodes. These high resistivity silicon devices are glass passivated for high stability and reliability

TR8025

Abstract: RB751V-40 TE-17 1SR35-400A T-82 1SR159-200TE25 1SS376 te-17 ROHM udz te-17 RB063L-30TE25 1SS133 T-77 RB751S-40TE61 RB441Q-40
Contextual Info: Table of characteristics Diodes Table of characteristics Small signal diodes !Switching diodes ROHM has an overwhelming production capability of high reliable switching diodes in the industry. The superior antisurge characteristics of the UMD2 package in spite of the small size is noteworthy. A wide variety of diode arrays

MA40135

Abstract: MA40133 ma40131
Contextual Info: Silicon Beam Lead Schottky Barrier Diodes MA40130 Series V3.00 Features ● ● ● ● Case Style 965 Planar Construction Surface Oriented Diode Strong Beam Construction Low Noise Figure (Mixer Diodes) Low, Medium and High Barrier Diodes Available Description

TEKELEC* diode

Abstract: Tekelec diode
Contextual Info: 2SE££>-< M 'M SS': ¿Si HIGH-VOLTAGE PIN AND NIP DIODES Silicon PIN Switching and Phase Shifting Multithrow Switch M odules. 10

MA4E2037

Abstract: MA4E2039 M541 MA4E2040
Contextual Info: GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040 MA4E2037, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Barrier Diodes Features • • • • • Package Outlines Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation

GC4510

Abstract: ku band HIGH POWER ANTENNA SWITCH PIN DIODE GC4500 GC4511-00 GC4511 GC4512 GC4513 GC4530 GC4533 digital phase shifters
Contextual Info: GC4510 – GC4533 CONTROL DEVICES High Voltage NIP Diodes TM RoHS Compliant KEY FEATURES The GC4500 series are high voltage, high power anode base NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device

bh 26 00

Abstract: DH80102 BH-2003 BH301 80204 89129 R/BH-202
Contextual Info: SILICON PIN AND NIP DIODES FOR SWITCHING AND PHASE SHIFTING APPLICATIONS MEDIUM AND HIGH POWER This series of high power, high voltage PIN and NIP diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, In terms of breakdown voltages, junction

melf diode marking code

Abstract: TMBYV10-40
Contextual Info: TMBYV 10-40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

byv 65

Contextual Info: BYV 10- 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

MV2205

Abstract: MV2209 equivalent MV2209 MV2201 MV2203 MERIT
Contextual Info: MV2201, MV2203 SILICON MV2205, MV2209 vvc-WhAFC SILICON EPICAP DIODES VOLTAGE-VARIABLE CAPACITANCE DIODES . . . designed specifically for the high volume AFC applications of FM Radio and T V , utilizing the economical PLASTIC PACKAGE. • Very High Q with Guaranteed Minimum Values

MGRB1018

Abstract: MGRB2018CT
Contextual Info: MOTOROLA Order this document by MGRB1018/D SEMICONDUCTOR TECHNICAL DATA Advance Information Power Manager MGRB1018 Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features:

89051

Abstract: DH80102 89189 DH80052 89186
Contextual Info: HIGH-VOLTAGE PIN AND NIP DIODES e - This series of high power, high voltage PIN and NIP diodes Incorporates passivated mesa technology. A broad range Is available, in terms of breakdown voltages, junction capacitances, and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.

mv30007

Abstract: gaas varactor diodes mv31026 MV30016 MV34004 MV34010 MV31011 MV31021 MV3000 "Varactor Diodes"
Contextual Info: GaAs Varactor Diodes Hyperabrupt TM MV30011 – MV34010 Features ● High Q Values for Higher Frequency Performance ● Large Tuning Ratios ● Low Reverse Current ● Gamma Values to 1.5 ● Available as Bondable Chips and as Packaged Diodes ● Available in Chip-on-Board Packaging

Contextual Info: 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications 1 Introduction SiC JBS diodes offer exceptional features that include but are not limited to high temperature operation, high blocking voltages and fast switching capabilities [1]. This document

Contextual Info: MOTOROLA Order this document by MGR2025CT/D SEMICONDUCTOR TECHNICAL DATA Advance Information MGR2025CT Pow er Manager Gallium Arsenide Power R ectifier . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features:

Contextual Info: M OTOROLA Order this document by MGRB2025CT/D SEMICONDUCTOR TECHNICAL DATA Advance Information MGRB2025CT Pow er Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features:

Contextual Info: P H t i GEC P L E S S E Y DC1302/04 & DC1330 GaAs SCHOTTKY X-BAND WAVEGUIDE MIXER DIODES These diodes are used in mixer applications requiring a better noise figure than can be acheived with silicon diodes and as sensitive broadband detectors at high microwave

MSD700

Abstract: MSD703 MSD710 MSD706 MSD702 MSD701 MSD720 MSD731 MSD732 MSD705
Contextual Info: Multiplier Devices: MSD 700 Series Multiplier Devices Step Recovery Diodes Description The MicroMetrics MSD 700 series Step Recovery diodes are epitaxial silicon varactors which provide high output power and efficiencies in harmonic generator applications.

BYQ30ED

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, ultra-fast recovery

Contextual Info: bSM'iñS'i O D l ñ l T M MITSUBISHI LASER DIODES 33^ ML6XX20 SERIES AIGaAs LASER DIODES ML60120R, ML61120 DESCRIPTION M L6XX20 FEATURES series are high power AIGaAs 9 O utpu t 45m W CW sem iconductor laser diodes w hich provides a stable, # Short astig m atic distance

gunn diodes

Abstract: DC1279F-T Gunn Diode gunn diode datasheet 10 GHz gunn diode DC1200-T gunn diode marconi Marconi gunn DC1278F-T DC1279D
Contextual Info: Millimetre Wave Graded Gap Gunn Diodes The DC1200-T series extends the range of high power, graded gap, GaAs CW Gunn diodes further into the millimetre wave frequency band. They offer superior stability where low df/dt, low df/dv and cold start turn-on are at a premium.