DIODES B Search Results

Contextual Info: SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: • packaged diodes • chip They are optimized for wide band applications, in the frequency range from 1 to 18 GHz.

DH324

Abstract: DH312 DH314 DH313 DH315 DH301 DH303
Contextual Info: SILICON SCHOTTKY DIODES Silicon Schottky barrier mixer diodes SILICON SCHOTTKY BARRIER MIXER DIODES Description Silicon Schottky barrier mixer diodes are available in the following configurations: • packaged • chip Low barrier diodes are required for applications where the Local Oscillator LO drive level is between

Contextual Info: SILICON SCHOTTKY DIODES Selection guide SILICON SCHOTTKY DIODES Selection Guide PAGE SCHOTTKY BARRIER DETECTOR DIODES 12-29 SCHOTTKY BARRIER MIXER DIODES 12-30 12-28 Vol. 1 SALES OFFICES: VISIT OUR WEB SITE AT http://www.temex.com

M208

Contextual Info: TEKELEC COMPONENTS bflE '10G37Ô7 000G232 3fl2 D PIN DIODES SILICON LIMITER PIN DIODES These passivated mesa PIN diodes have a thin I layer, This series of diodes is available as chips and in hermetic ceram ic packages. They operate as power dependent variable resistances and provide

schottky marking S4

Abstract: SD103CWS SD103AWS SD103BWS
Contextual Info: SD103AWS/SD103BWS SD103CWS Surface Mount Schottky Barrier Diodes Features: *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package SMALL SIGNAL SCHOTTKY DIODES 350 mAMPERES 20-40 VOLTS Mechanical Data:

Silicon Point Contact Mixer Diodes

Abstract: Mixer Silicon Detector
Contextual Info: Section 4 Receiving Diodes GaAs Schottky Barrier Mixer D io d e s . 4-2 GaAs Beamless Mixer Diodes .

ML7XX11

Abstract: ML720J11S ML725B11F
Contextual Info: MITSUBISHI LASER DIODES ML7XX11 SERIES InGaAsP DFB-LASER DIODES TYPE NAME ML725B11/ML720J11S/ML725J11F DESCRIPTION APPLICATION ML7XX11 series are DFB Distributed Feedback laser diodes emitting light beam around 1310nm. They are well suited for light source in long -distance

Contextual Info: B5817W/B5819W Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free Features: *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-123 Package Description: SMALL SIGNAL SCHOTTKY DIODES 1.0 AMPERES 20-40 VOLTS

Contextual Info: B0530W/B0540W Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free Features: *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-123 Package Description: SMALL SIGNAL SCHOTTKY DIODES 500m AMPERES 30-40 VOLTS

Contextual Info: B5817WS/B5819WS Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free Features: SMALL SIGNAL SCHOTTKY DIODES 1.0 AMPERES 20-40 VOLTS *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package Description:

SOD-923 marking Y

Abstract: sod923 SOD-923
Contextual Info: BAT54HD Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 30 VOLTS P b Lead Pb -Free Feature: * Slicon Epitaxial Planer * Low Forward Voltage and Low Reverse Current * High Reliability * Schottky Barrier Diodes Encapsulated in a SOD-923 Package

LL4148

Abstract: LL4148 FAST MELF LL4448 small signal diodes case ja
Contextual Info: LL4148/LL4448 Surface Mount Switching Diodes P b Lead Pb -Free SMALL SIGNAL SWITCHING DIODES 150 m AMPERES 75 VOLTS Features: *Silicon Epitaxial Planner Diode *Fast Switching Diodes *500 mW Power Dissipation Mechanical Data: *Case : MINI-MELF Glass Case (SOD-80)

Contextual Info: BAS70W/BAS70W-04 BAS70W-05/BAS70W-06 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 70m AMPERES 70 VOLTS Features: *Extremely Fast Switching Speed *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOT-323 Package

WSD520S

Abstract: SOD523 MARKING 4 SOD523
Contextual Info: WSD520S-40 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 40 VOLTS P b Lead Pb -Free Feature: *Extrmely High Switching Speed. *Low Forward Voltage and Low Reverse Current. *High Reliability. *Schottky Barrier Diodes Encapsulated in a SOD-523 Package

GaAs Gunn Diode

Abstract: impatt APX378 GaAs
Contextual Info: DIODES INDEX ♦ DIODES SELEC TIO N GUIDE .13 ♦ DIODES SCREENING P R O C E D U R E S . 15

Contextual Info: MICROWAVE SILICON COMPONENTS Introduction INTRODUCTION This part of the Microwave section presents TEMEX product lines including: • receiving diodes • control diodes • tuning varactors • multiplier varactors • step recovery diodes • high voltage PIN diodes

DH80102

Abstract: DH80106 DH80050 DH80052
Contextual Info: SILICON PIN DIODES Square ceramic surface mountable PIN diodes MICROWAVE SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES Description These PIN diodes are manufactured in a square package SMD for surface mount applications. These packages utilize ceramic package technology with low inductance and axial terminations. This design

Contextual Info: BAT54CTT1G, SBAT54CTT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

transistor mark code H1

Abstract: transistor mark code H7 Variable Capacitance Diode HVR100 mark CA MARK CODE N1 rf transistor mark code H1 HVB14S HVC131 HVC132
Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC200A HVC202A HVC202B HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B HVC357 HVC358B HVC359 HVC362 HVC363A HVC365 HVC369B HVC372B HVC374B HVC131 HVC132 HVC133 HVC134 HVM121WK HVM131S HVM131SR

CMLD4448

Abstract: diode c48
Contextual Info: CMLD4448 SURFACE MOUNT PICOmini DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD4448 type contains two 2 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar

BAV19W

Abstract: BAV20W BAV21W
Contextual Info: BAV19W/BAV20W BAV21W Surface Mount Switching Diodes SMALL SIGNAL SWITCHING DIODES 200 AMPERES 120-250 VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *For General Purpose Switching Applications Description:

MMBD717LT1

Abstract: MMBD717LT1G
Contextual Info: MMBD717LT1 Preferred Device Common Anode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

mitsubishi laser diode

Abstract: ML720K19S 1310nm ML728C19S ML7XX19 ML720J19S ML725B19F ML725C19F
Contextual Info: MITSUBISHI LASER DIODES ML7xx19 SERIES Notice: Some parametric limits are subject to change. TYPE NAME 1310nm InGaAsP FP LASER DIODES ML720J19S, ML720K19S, ML728C19S ML725B19F, ML725C19F DESCRIPTION FEATURES ML7XX19 series are InGaAsP laser diodes which provide

BAS40

Abstract: BAS40-04 BAS40-05 BAS40-06 BAS40-07 marking code 47p
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 M3D071 BAS40 series Schottky barrier double diodes Product specification Supersedes data of 1997 Oct 24 1999 Apr 28 Philips Semiconductors Product specification Schottky barrier (double) diodes FEATURES BAS40 series