DIODES 8895 Search Results
DIODES 8895 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy | 
|---|---|---|---|---|---|
| CEZ6V2 |   | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |   | Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ24V |   | Zener Diode, 24 V, USC | Datasheet | ||
| CUZ20V |   | Zener Diode, 20 V, USC | Datasheet | ||
| CEZ5V6 |   | Zener Diode, 5.6 V, ESC | Datasheet | 
DIODES 8895 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| uhf8jt
Abstract: JESD22-B102D J-STD-002B 
 | Original | O-220AC ITO-220AC 2002/95/EC 2002/96/EC 08-Apr-05 uhf8jt JESD22-B102D J-STD-002B | |
| DS17
Abstract: DSA0068090 HLCS-KA88 HLCS-KA99 HLCS-KB88 HLCS-KB99 HLCS-KG88 HLCS-KG99 HLCS-KP88 HLCS-KP99 
 | Original | ||
| diodes 8895
Abstract: 1n4771 
 | OCR Scan | DO-35 O-213AA diodes 8895 1n4771 | |
| COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050   D 168 s104 diode 87a 
 | Original | vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a | |
| Schottky Diode 039 B34
Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D 
 | Original | vse-db0001-0809 Schottky Diode 039 B34 S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D | |
| FE150B lucent DC-DC POWER MODULEContextual Info: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE050B, FE100B, FE150B Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 12 Vdc Output; 50 W to 150 W Features • High efficiency: 86% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in. | OCR Scan | FE050B, FE100B, FE150B FE050B9 FE100B9 FE150B9 FE050B FE150B lucent DC-DC POWER MODULE | |
| JESD22-B102D
Abstract: J-STD-002B M2035S M2045S 
 | Original | M2035S M2045S O-220AB 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B M2035S M2045S | |
| Contextual Info: M2035S & M2045S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TO-220AB Major Ratings and Characteristics IF AV 20 A VRRM 35 V, 45 V IFSM 200 A VF at IF = 20 A 0.55 V TJ max. 150 °C 3 2 1 1 2 3 CASE Features Mechanical Data | Original | M2035S M2045S O-220AB 2002/95/EC 2002/96/EC O-220AB J-STD-002B JESD22-B102D 08-Apr-05 | |
| M2035S
Abstract: JESD22-B102D J-STD-002B M2045S 
 | Original | M2035S M2045S O-220AB 2002/95/EC 2002/96/EC 08-Apr-05 M2035S JESD22-B102D J-STD-002B M2045S | |
| M3045SContextual Info: M3035S & M3045S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder Dip 260 °C, 40 seconds | Original | M3035S M3045S 2002/95/EC 2002/96/EC O-220AB O-220AB 08-Apr-05 M3045S | |
| bys12
Abstract: BYS12-90 JESD22-B102D J-STD-002B BYS12-90HE3 
 | Original | BYS12-90 DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 bys12 BYS12-90 JESD22-B102D J-STD-002B BYS12-90HE3 | |
| Contextual Info: BYS12-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability | Original | BYS12-90 DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 | |
| Contextual Info: M2035S & M2045S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability | Original | M2035S M2045S O-220AB 2002/95/EC 2002/96/EC O-220AB 08-Apr-05 | |
| FE050B9
Abstract: FE150b FE050B FE100B FE150B9 UL-1950 ta 8719 
 | Original | FE050B, FE100B, FE150B protection99, DS97-532EPS DS92-060EPS) FE050B9 FE050B FE100B FE150B9 UL-1950 ta 8719 | |
|  | |||
| Contextual Info: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE050B, FE100B, FE150B Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 12 Vdc Output; 50 W to 150 W Features • High efficiency: 86% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in. | OCR Scan | FE050B, FE100B, FE150B FE050B9 FE100B9 FE150B9 FE050B | |
| Contextual Info: BYS12-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability | Original | BYS12-90 DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 | |
| M2035S
Abstract: M2045S JESD22-B102 J-STD-002 
 | Original | M2035S M2045S O-220AB 2002/95/EC 2002/96/EC 18-Jul-08 M2035S M2045S JESD22-B102 J-STD-002 | |
| JESD22-B102D
Abstract: J-STD-002B 
 | Original | 2002/95/EC 2002/96/EC O-220AC 08-Apr-05 JESD22-B102D J-STD-002B | |
| Contextual Info: BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time | Original | BYG20D BYG20J DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 | |
| BYD20G
Abstract: byd20 
 | Original | BYG20D BYG20J J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 BYD20G byd20 | |
| Contextual Info: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability | Original | BYG10D BYG10Y J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 | |
| vishay MARKING UM SMA
Abstract: smd code marking e3 BYG10D BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B 
 | Original | BYG10D BYG10Y DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 vishay MARKING UM SMA smd code marking e3 BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B | |
| BYG20J
Abstract: BYD20G vishay smd diode code marking BYG20D BYD20 marking code E3 SMD diode smd code marking e3 JESD22-B102D J-STD-002B 
 | Original | BYG20D BYG20J DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYG20J BYD20G vishay smd diode code marking BYD20 marking code E3 SMD diode smd code marking e3 JESD22-B102D J-STD-002B | |
| M3045
Abstract: JESD22-B102D J-STD-002B M3045S 
 | Original | M3035S, M3045S, MI3035S MI3045S O-220AB O-262AA M30xxS 2002/95/EC 2002/96/EC MI30xxS M3045 JESD22-B102D J-STD-002B M3045S | |