DIODES 10-25 L9 Search Results

BYW51-200

Abstract: BYW51F-200 BYW51FP-200 BYW51G-200
Contextual Info: BYW51/F/G/FP-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 K FEATURES AND BENEFITS n n n n n A2 SUITED FOR SMPS

BYW51-200

Abstract: BYW51F-200 BYW51G-200
Contextual Info: BYW51/F/G-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 K A2 A1 FEATURES AND BENEFITS D2PAK SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES

ISOWATT-220

Contextual Info: BYW51/F/G-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 K A2 A1 FEATURES AND BENEFITS D2PAK SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES

BYW51-200

Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Contextual Info: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES

BYW51-200

Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200 TO220-FPAB diode 57
Contextual Info: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES

BYW51-200

Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Contextual Info: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES

byw51fp200

Abstract: BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Contextual Info: BYW51/F/G/FP/R-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES

BYW51-200

Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Contextual Info: BYW51/F/G/FP/R-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V A1 K trr (max) A2 A2 K A1 25 ns TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES

zener diode marking E7

Abstract: diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Typ e Device Typ e Device m arking Device m arking BA L99 E2 B Z X 84-C 4 3 X6 B A R 99 E3 B Z X 84-C 47 X7 B A S 16 A3 FM M D 914 5D B A V 70 A4 FM M D 6050 5A B A V 74

Contextual Info: MITSUBISHI LASER DIODES ML9XX10 SERIES InGaAsP MOW HIGH POWER LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9XX10 series are InGaAsP high power which provides a stable, single transverse laser diodes mode oscillation with emission wavelength of 1550nm and pulse light output

ml976h6f

Contextual Info: MITSUBISHI LASER DIODES ML9XX6 SERIES InGaAsP— MQW— FP LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X6 series are InG aA sP laser diodes w hich provides a s ta b le , s in g le w avele ngth of tra n s v e rs e 1550nm m ode o s c illa tio n and standard

Contextual Info: MITSUBISHI LASER DIODES ML9XX6 SERIES InGaAsP — MQW— FP LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X6 series are InG aA sP laser diodes w hich provides a s ta b le , s in g le tra n s v e rs e w avele ngth of 1550nm m ode o s c illa tio n and standard

Contextual Info: M ITSU BISH I LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES InGaAsP DEB LASER DIODES TYPE NAME DESCRIPTION APPLICATION M L9XX11,M L9XX 16 and M L9XX22 series are DFB Distributed Feedback laser diodes emitting light beam with • . . emission wave length o f 1470 ~ 161 Onm.

Contextual Info: MITSUBISHI LASER DIODES ML9XX6 SERIES In G aA sP — M QW — F P L A S E R DIODES TYPE N AM E DESCRIPTION FEATURES M L9XX 6 series are InG aAsP laser diodes which provides a stable, sin gle transverse mode o scilla tio n with e m ission wavelength of 1550nm and standard continuous light Output

Contextual Info: MITSUBISHI LASER DIODES ML9XX10 SERIES InGaAsP— MQW HIGH POWER LASER DIODES TYPE NAME DESCRIPTION M L9XX10 w hich w ith s e rie s provides FEATURES are In G a A sP a stable, single high power tra nsverse em ission w avelength o f 1550nm la s e r m ode and pulse

ML961B8S

Abstract: S-25 1480 nm diode laser H Beam photodiode 1490 nm
Contextual Info: MITSUBISHI LASER DIODES ML9XX8 SERIES InG aA sP-M Q W HIGH POWER LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X8 serie s are InG aA sP high po w e r laser dio d e s w hich p ro vid e s a sta b le , single em is s io n w a v e le n g th of tra n s v e rs e

ITT TCA 700 Y

Abstract: TCA 700 Y
Contextual Info: TCA1561 B TCA1560 B Stepper M otor Drivers Preliminary Data Bipolar IC Type Ordering Code Package TCA 1 5 6 1 B TCA 1 5 6 0 B Q 67000-A 8209 Q 67000-A 8208 P-SIP-9 P-DIP-18-L9 The TCA 1561 B is a bipolar m onolithic IC designed to control the m otor current in one

L9836

Abstract: L9839 L9827 L9B47 L9813 L98200 L9B15 L9H5.4 L9B10 L9 Zener
Contextual Info: L9 Series 1.5 KW Voltage Limiting Diodes A range of medium power zener and avalanche surge suppressor diodes available in a hermetically sealed D01 package in both unipolar and bipolar configurations. - 5KW; 1mS ^ surge- - - —

LD chip

Abstract: LLD1013E01
Contextual Info: CW LASER DIODES L9418 100 Relative Radiant Output Power % Radiant Output Power Φe (W) ( Top(c) = 25 °C ) ( Top(c) = 25 °C ) 1.5 1.0 0.5 0.5 Peak Emission Wavelength 980nm, Radiant Output Power 1W (CW) 60 FEATURES 40 Radiant output power (CW) : 1W Peak Emission Wavelength : 980 nm ± 3 nm

L9390

Abstract: valve & pump control D1062 JESD97 TQFP100
Contextual Info: L9390 Twelve channel valve driver Data Brief Features • Four low side switched output drivers with 0.1Ω Rds,ON at 25°C Possibly configurable as PWM controlled adding external freewheeling diodes ■ Two low side PWM controlled output drivers with 0.1Ω Rds,ON at 25°C and integrated active

L9922

Contextual Info: blE D • DDmb7T T7fl I M IT S MITSUBISHI LASER DIODES ML9XX2 SERIES MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES M L9 X X 2 is a DFB (D is trib u te d Feedback) laser diode • L o w th re sh o ld c u rre n t ty p ic a l 2 0 m A

Contextual Info: L9390 Twelve channel valve driver Data Brief Features • Four low side switched output drivers with 0.1Ω Rds,ON at 25°C Possibly configurable as PWM controlled adding external freewheeling diodes ■ Two low side PWM controlled output drivers with 0.1Ω Rds,ON at 25°C and integrated active

600 um laser fiber medical

Abstract: L929 Peltier element L9399 836 DIODE LLD1012E01 836 DIODE current "Peltier element" AL7 1BW CW Laser
Contextual Info: FIBER-OUTPUT CW LASER DIODES L9399 Figure 1: Radiant Output Power vs. Forward Current Typ. 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 ( Top(c) = 20 °C ) 100 Relative Radiant Output Power (%) Radiant Output Power Φe (W) Figure 2: Emission Spectrum (Typ.)

Contextual Info: L9390 Twelve channel valve driver Data Brief Features • Four low side switched output drivers with 0.1 Rds,ON at 25°C Possibly configurable as PWM controlled adding external freewheeling diodes ■ Two low side PWM controlled output drivers with 0.1 Rds,ON at 25°C and integrated active