DIODE ZL 82 Search Results

r100y

Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fl*120GTb 0006520 □ ■ AL£6 v R P \A / S f i Zl •¡mtUllHyJWIK electronic C lH M IM w alc^ | , _ " * *>f J * • < j 3 t Silicon Photo PIN Diode N-Type) ‘ Applications:. Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.

AN-829

Abstract: C1996 AN829
Contextual Info: National Semiconductor Application Note 829 Joel Martinez Application Engineer June 1992 INTRODUCTION IEEE 1194 1 Standard for Electrical Characteristics of Backplane Transceiver Logic Interface Circuits validates BTL as the enabling technology for high speed busses Driving

diode zl 100

Abstract: auirf AN-994
Contextual Info: PD - 96380 AUTOMOTIVE GRADE AUIRF2903ZS AUIRF2903ZL HEXFET Power MOSFET Features l l l l l l l D Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

Contextual Info: PD - 96380 AUTOMOTIVE GRADE AUIRF2903ZS AUIRF2903ZL HEXFET Power MOSFET Features l l l l l l l V BR DSS D Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

BTS 824 E

Abstract: BTS 824 a diode zener ZL 27 siemens functional profet siemens functional description profet 824 mosfet 824 10 pins siemens Requirements for Power MOSFET connected in parallel diode 824
Contextual Info: Target Datasheet BTS 824 Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating Voltage Vbb on Active channels On-state Resistance RON Nominal load current IL(ISO) Current limitation IL(SCr) Package P-DSO-20-10 (Power SO 20)

P-DSO-20-12

Abstract: 824R
Contextual Info: BTS 824R Smart High-Side Power Switch Four Channels: 4 x 90mΩ Ω Status Feedback Product Summary Vbb Active channels On-state Resistance RON Nominal load current IL NOM Current limitation IL(SCr) Package Operating Voltage Power SO 20 5.5.40V four parallel

824R

Abstract: P-DSO-20-12 Q67060-S7027 SCR IC CHIP
Contextual Info: BTS 824R Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Vbb Active channels On-state Resistance RON Nominal load current IL NOM Current limitation IL(SCr) Package Operating Voltage one 90mΩ 4.7A 12A 5.5.40V four parallel

a06 transistor

Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
Contextual Info: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line

420 NPN Silicon RF Transistor

Abstract: transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor
Contextual Info: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 • For high gain low noise amplifiers 4 • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability

Contextual Info: MF388 820 nm - 250 MHz High Performance LED Data Sheet September 2004 Ordering Information MF388 MF388 ST TO-46 Package ST Housing -40 °C to +85 °C Note:Rated Fiber coupled power apply only on the TO-46 package, for housing options fiber coupled power is

transistor b 1238

Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
Contextual Info: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1

DATA SHEET TRANSMISSION LINE

Abstract: Bi-Directional P-Channel FCT162344 Signal Path Designer
Contextual Info: EFFECTIVE USE OF LINE TERMINATION IN HIGH SPEED LOGIC CONFERENCE PAPER CP-23 EFFECTIVE USE OF LINE TERMINATION IN HIGH SPEED LOGIC CONFERENCE PAPER CP-23 Integrated Device Technology, Inc. By Stanley Hronik INTRODUCTION turn on rate to achieve the fast throughput as shown in Figure

AN6711

Abstract: IEEE896 AN-671 C1995 SUMITOMO
Contextual Info: The IEEE 896 Futurebus a is a general-purpose bus standard for high-performance microcomputer systems With a strong emphasis on speed and reliability IEEE 896 offers a number of innovative features that are not found in other backplane buses A major contribution to its performance comes from its electrical specifications Futurebus a solves for the first time

3766

Abstract: pbl 3766 r2 capacitor, 2200 microfarad 25v TP3054 1N4004 1N4454 ericsson slic node b ericsson hardware
Contextual Info: September 1997 PBL 3766, PBL 3766/6 Subscriber Line Interface Circuit Description Key Features The PBL 3766 Subscriber Line Interface Circuit SLIC is a monolithic integrated circuit, manufactured in 75 V bipolar technology. The PBL 3766 SLIC facilitates the

Contextual Info: September 1997 PBL 3766, PBL 3766/6 Subscriber Line Interface Circuit Description Key Features The PBL 3766 Subscriber Line Interface Circuit SLIC is a monolithic integrated circuit, manufactured in 75 V bipolar technology. The PBL 3766 SLIC facilitates the

b 8842

Abstract: C1995 DS3662 DS3896 DS3897
Contextual Info: The IEEE 896 Futurebus is a proposed general-purpose bus standard for high-performance microcomputer systems With a strong emphasis on speed and reliability P896 offers a number of innovative features that are not found in other backplane buses A major contribution to its performance comes from its electrical specifications The Futurebus solves for the first time

6NTP2A

Abstract: IEC-63 BCM3352 UL-1950 ericsson slic ericsson 800 filter Ericsson Microelectronics
Contextual Info: PBL 387 82 Preliminary Subscriber Line Interface Circuit SLIC Key Features • Designed to interface with Broadcom BCM3352, FlexiVoice , cable modem circuit VCC VTBAT AGND VBAT PRT BGND C1 • Differential Codec interface • On-chip ringing generation

Contextual Info: MIC2981/2982 High-Voltage High-Current Source Driver Array Preliminary Information General Features The MIC2981/82 is an 8-channel, high-voltage, high-current source driver array ideal for switching high-power loads from logic-level TTL, CMOS, or PMOS control signals.

Contextual Info: RFCM3080 40-1003MHZ GAAS/GAN PUSH PULL MODULE Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm RFCM3080 Features • Excellent Linearity  Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Low Noise  Unconditionally Stable Under all

3762a

Abstract: PBL3762
Contextual Info: October 1998 PBL 3762A/2, PBL 3762A/4 Subscriber Line Interface Circuit Description Key Features The PBL 3762A/2 Subscriber Line Interface Circuit SLIC is a bipolar integrated circuit in 90 V technology which replaces the conventional transformer based analog

pbl3762a

Contextual Info: September 1997 PBL 3762A, PBL 3762A/4 Subscriber Line Interface Circuit Description Key Features The PBL 3762A Subscriber Line Interface Circuit SLIC is a bipolar integrated circuit in 90 V technology which replaces the conventional transformer based analog line

3762a

Abstract: PBL 3762/2 R1 Ericsson PBL 455 khz if transformer ericsson slic RL 782 relay
Contextual Info: March 1999 PBL 3762A/2, PBL 3762A/4 Subscriber Line Interface Circuit Description Key Features The PBL 3762A/2 Subscriber Line Interface Circuit SLIC is a bipolar integrated circuit in 90 V technology which replaces the conventional transformer based analog

PBL3798

Abstract: capacitor, 2200 microfarad 25v ERICSSON BML
Contextual Info: April 1997 PBL 3798/6 Subscriber Line Interface Circuit Description Key Features PBL 3798/6 is an analog Subscriber Line Interface Circuit SLIC , which is fabricated in a 75 V bipolar, monolithic process. PBL 3798/6 has a programmable, constant current feed. A stand-by state reduces

TEA 1091

Abstract: DIODE bfp 86 siemens rs 1091
Contextual Info: SIEMENS SI EGET 25 BFP 420 NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability