DIODE ZL 22 Search Results

VPS05605

Abstract: BF 212 transistor TS1440
Contextual Info: SIEGET
25 BFP 405 NPN Silicon RF Transistor 3
For low current applications 4
For oscillators up to 12 GHz
Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

420 NPN Silicon RF Transistor

Abstract: VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86
Contextual Info: SIEGET
25 BFP 420 NPN Silicon RF Transistor 3
For high gain low noise amplifiers 4
For oscillators up to 10 GHz
Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2
Transition frequency f T = 25 GHz
Gold metallization for high reliability

siemens rs 1003

Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
Contextual Info: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability

BF 914 transistor

Abstract: transistor R 405 transistor bf 405 transistor 1546 405 marking transistor s parameters noise transistor BF 914
Contextual Info: SIEMENS SIEGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability

428l2

Abstract: SIEMENS TD-400 Q67060-S7403-A2 BTS428L2 GPT09161 Diodes smd e4 BTS428-L2
Contextual Info: PROFET BTS428L2 Smart High-Side Power Switch One Channel: 60mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation Package RON Vbb on IL(NOM) IL(SCr) 60mΩ 4.75.41V 7.0A 17A TO 252-5-1 (D-Pak less than half the size of a TO-220 SMD)

428l2

Abstract: SIEMENS TD-400 BTS436L2 BTS436L2G siemens functional description profet BTS436L2 S siemens functional profet
Contextual Info: PROFET BTS436L2 Smart High-Side Power Switch One Channel: 38mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation Package RON Vbb on IL(NOM) IL(SCr) 38mΩ 4.75.41V 9.8A 40A TO 220-5-11 TO-263-5-2

velocity of propagation of FR4

Abstract: transmission line theory AN22 AP-524 SIGNAL PATH DESIGNER
Contextual Info: Application Note 22

RUBYCON YK CAPACITOR

Abstract: YAGEO resistor sharp optocoupler UEI 10SP050L GLF2012T capacitor electrolytic BC 2432.0015C Rubycon yk SMD diode za GLF2012T100M
Contextual Info: STEVAL-ISA012V1 BOM Reference Value Description CON1, CON2 Hartmann/ptr, 2 poles, type PK 7402, 380VAC 16A COW3 Hartmann/ptr, 3 poles, type PK 3503, 380VAC 16A C1 2.2nF/2kV Cera-Mite Corporation 44LD22 Y1 Ceramic Capacitor 20% C 27C3 220ilF 630V TDK C5750X7R2J224M SMD Ceramic Capacitor 20%

HD74LVCZ240A

Abstract: DSA003634
Contextual Info: HD74LVCZ240A Octal Buffers / Line Drivers with 3–state Outputs ADE-205-229A Z 2nd. Edition February 1999 Description The HD74LVCZ240A has eight inverter drivers with three state outputs in a 20 pin package. This device is a inverting buffer and has two active low enables (1G and 2G). Each enable independently controls four

Hitachi DSA002744

Contextual Info: HD74LVCZ245A Octal Bidirectional Transceivers with 3–state Outputs ADE-205-228A Z 2nd. Edition February 1999 Description The HD74LVCZ245A has eight buffers with three state outputs in a 20 pin package. When (T / R) is high, data flows from the A inputs to the B outputs, and when (T / R) is low, data flows from the B inputs to the

724G

Abstract: P-DSO-20 BTS724G
Contextual Info: BTS 724G Smart High-Side Power Switch Four Channels: 4 x 90mΩ Ω Status Feedback Product Summary Vbb Active channels On-state Resistance RON Nominal load current IL NOM Current limitation IL(SCr) Package Operating Voltage 5.5.40V four parallel 22.5mΩ

equivalent of SL 100 NPN Transistor

Abstract: TRANSISTOR cq 817 TRansistor 648 SL 100 NPN Transistor BDT239 05API philips ferrite material specifications BY239 LLE18040X 5344 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040X NPN microwave power transistor Product specification Supersedes data of September 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor LLE18040X FEATURES QUICK REFERENCE DATA

max8705

Abstract: 72125
Contextual Info: Product Specification OS8740230 Si Optical Receiver, 40 – 870MHz, 225mA max. @ 24VDC FEATURES • • • • • • • Excellent linearity Superior return loss performance Extremely low distortion Optimal reliability Low noise Standard CATV outline Excellent flatness

diode zl 100

Contextual Info: f j j P E R I C O M PI74VCX16244 . 16-Bit Buffer/Driver with 3-State Outputs Product Features

Contextual Info: □IXYS MMO 74 AC Controller Modules V RSM V RRM V DSM V DRM V V 1200 1600 1200 1600 74 A V RRM 1 2 0 0 -1600 V mini BLOC, SOT-227 B K1/A2 Type ^RMS G1 K2/A1 MMO 74-12io6 MMO 74-16io6 K2/A1 K1/A2 Symbol Maximum Ratings Test Conditions 74 53 34 A A A 10 ms 50 Hz , sine

HD74ALVCHS162830

Abstract: DSA003634
Contextual Info: HD74ALVCHS162830 1-bit to 2-bit Address Driver with 3-state Outputs ADE-205-221 Z Preliminary 1st. Edition July 1998 Description This 1-bit to 2-bit address driver is designed for 2.3 V to 3.6 V V CC operation. To ensure the high impedance state during power up or power down, OE should be tied to V CC through a pullup resistor; the

1797f

Abstract: diode zl 100
Contextual Info: ADVANCE INFORMATION Product Features: Product Description: • • • • • • • PI74ALPTX family is designed for low voltage operation, Supports Live Insertion V d d = 1.8V to 3.6V 3.6V Tolerant Inputs and Outputs Bus Hold High Drive, -32/64mA Typical V olp Output Ground Bounce < 0.4V

heat sink to220

Abstract: tea1795 TEA1795T FK 244 13 D2 PAK UM10431 Redpoint Rubycon 2200 LLC resonant converter transformer Fischer LLC resonant transformer
Contextual Info: UM10431 GreenChip TEA1795T synchronous rectifier controller demo board Rev. 1 — 26 October 2010 User manual Document information Info Content Keywords TEA1795T, LLC converter, resonant converter, dual Synchronous Rectifier SR driver, power supply, demo board.

mk case

Abstract: FSLB2520-330K MAX3863 MAX3863EGJ
Contextual Info: 19-2281; Rev 1; 10/02 2.7Gbps Laser Driver with Modulation Compensation The MAX3863 accepts differential CML clock and data input signals with on-chip 50Ω termination resistors. If a clock signal is available, an input data-retiming latch can be used to reject input pattern-dependent jitter.

Contextual Info: 19-2281; Rev 0; 1/02 2.7Gbps Laser Driver with Modulation Compensation The MAX3863 accepts differential CML clock and data input signals with on-chip 50Ω termination resistors. If a clock signal is available, an input data-retiming latch can be used to reject input pattern-dependent jitter.

diode ZL 22

Contextual Info: fÙ P E R IC O M 16-Bit Buffer/Driver with 3-State Outputs Product Features Product Description • PI74ALVTC family is designed for low voltage operation, V d d = 1.8V to 3.6V Pericom Semiconductor’s PI74ALVTC series of logic circuits are produced in the Company’s advanced 0.35 micron CMOS tech­

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFM240 POWER MOSFET THRU-HOLE (TO-254AA) Product Summary RDS(on) Part Number 0.18 Q IRFM240 200V. N-CHANNEL ID 18A Features: Simple Drive Requirements

BTS441R

Abstract: Q67060-S6118 Q67060-S6119
Contextual Info: BTS 441 R Smart Highside Power Switch One Channel: 20mΩ Status Feedback Product Summary On-state Resistance Operating Voltage Nominal load current Current limitation Package RON Vbb on IL(ISO) IL(lim) 20mΩ 4.75 . 41V 21A 65A TO-263-5-2 SMD TO-220-5-12

TRANSISTOR MARKING YB

Abstract: BFP420F MARKING 1G TRANSISTOR
Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability