DIODE ZD 22 Search Results

VM312

Abstract: DIODE H5y VM312-8PMJ VM3128
Contextual Info: V T C In c. V a lu e th e C u s to m e r VM312 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 TWO-TERMINAL READ/WRITE PR E A M PS FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nVA/Hz maximum

DIODE H5X

Abstract: diode zd 33 DIODE H5y diode zd 12
Contextual Info: E v ie n e Y I2 J 2 E : - V M 3 1 2 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • The VM312 is a1high-perform ance, low-power, bipolar mono­ lithic read / write pream plifier designed for use with twoterminal thin-film recording heads. It provides write current

diode zd 33

Abstract: yy12
Contextual Info: #| v v tc .„ c Value the Customer V M 333 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 1.1 nV/VHz maximum - Input capacitance = 20pF maximum

37400

Abstract: 627 DIODE ZD 222 D-68623 HTZ180D22K HTZ180D26K HTZ180D30K HTZ180D35K
Contextual Info: HTZ180D Series LARONTROL High Voltage Diode Rectifier Module IF AV = 1.3 A VRRM = 35000 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ180D35K HTZ180D30K HTZ180D26K HTZ180D22K 35000 30000 26000 22000 37400 33000 28600 24200 CIRCUIT DIAGRAM

ZS90

Abstract: DIODE zs90 ZS140 zs150 BZX72B BZX72 BZX72A BZX72C ZS100 Scans-00109896
Contextual Info: SILICON DIODES Voltage Reference Typ e No. Nom inal V oltage a t 5m A volts B Z X 72 B Z X 72A B Z X 72B B Z X 72C 9 9 9 9 % M ax. Dissipation mWt at 2 5 °C M ax. Slope Res. at 5 mA ohm s 5 5 5 5 5 6 -7 5 6 -7 5 6 -7 5 6 -7 50 50 50 50 Tolerance Tem perature C oefficient

Contextual Info: vC^VTCInc YJEc— » VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER _ July, 1993 FE A T U R E S TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • High Performance:

Transient Peak Power Effect on Diodes

Abstract: diode zd 22 diode zener ZD 36 CMR1U-10M CMZ5349B px tvs diode zener ZD 150
Contextual Info: www.ecnmag.com • ECN • August 2002 43 Discrete Semiconductors Edited by Aimee Kalnoskas, Editor-in-Chief Transient Peak Power Effect on Diodes by Sze Chin, Central Semiconductor Corp. enerally, it is common knowledge that when excessive power is dissipated within a diode junction, its

UAA2001

Abstract: UAA2022 MC1310 motorola stereo decoder Circuit UAA2022 MC1310 8 channel remote control transmitter circuit remote control transmitter and receiver circuit MC1310 fm multiplex stereo decoder diode zd 22 TDA3190P
Contextual Info: CONSUMER AND AUTOMOTIVE APPLICATIONS continued T.V., Monitor, Hifi & Radio (continued) Function IF Amplifier Features Case Type 626 MC1350 Case Type Includes sync, Separator, horizontal PLL’s vertical countdown and vertical ramp generator and driver (625 lines).

Contextual Info: SK60MH60 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET Z<BB Z¥BB T< T<@ O- L EF N$J 407,- %*8,23.-, -', .6.,+ O- L EF ;MG> N$^ Q>JE> *' _ Q &-^ O- L ;MG> N$^ Q> OP Inverse diode SEMITOP 4 MOSFET Module TD L X T< TD@ L X T<@ O- L EF ;MG> N$^

Germanium Diode OA90

Contextual Info: , Una. c-''j.a.ii.s.u*y ^^mi-donauctoi TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 OA90 Gold Bonded Germanium Diode FEATURES Low forward voltage drop—lowpowerconsumption Thirty years of proven reliability—one million hours mean time between failures (MTBF)

Contextual Info: ^£.mi-L.onauatoi iJ-^toaucti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1N38A GOLD BONDED GERMANIUM DIODE FEATURES Low forward voltage drop—low power consumption Thirty years of proven reliability—one million hours mean time between failures (MTBF)

74HC40103

Contextual Info: SGS-THOMSON M54/74HC40102 M54/74HC40103 8 STAGE PRESETTABLE SYNCHRONOUS DOWN COUNTERS • HIGHSPEED fMAX = 40 MHz TYP. at Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 |iA (MAX.) at Ta = 25 °C ■ HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY

Contextual Info: Amplifier built-in Ultra-slim Photoelectric Sensor Thru-beam • Narrow-beam type EX-10S□ Conforming to EMC Directive Recognition About half the light diffusion of previous models Three advantages of narrow-beam sensors Advantage 1 Advantage 2 Alleviates interference without slits,

ultrasonic receiver MOTOROLA

Abstract: ir transmitter and receiver pair MC14458 infrared tv remote receiver transmitter-receiver MC3373 remote control with 4 channels Ultrasonic transmitter receiver diode zd 22 vhf tv transmitter
Contextual Info: Remote Control MC14457 Transmitter MC14458 Receiver Constructed in CMOS technology, this Transmitter-Receiver pair is designed for ultrasonic or infrared remote control of TV receivers, converters, communications receivers and games. Channel selection up to 16 channels can be done single entry;

Contextual Info: S G S -T tiO M S O N L6234 Riil D [^@[1 [L [l© ¥ [^ © R a D © © THREE PHASE MOTOR DRIVER SUPPLY VOLTAGE FROM 7 TO 52V 5A PEAK CURRENT R ds on 0.3£2 TYP. VALUE AT 25°C CROSS CONDUCTION PROTECTION TTL COMPATIBLE DRIVER OPERATING FREQUENCY TO 50KHz THERMAL SHUTDOWN

J508 Vishay

Abstract: J500 033 regulator Vishay Siliconix J510 J503 J501 J502 J504 J505 current regulator diode j500
Contextual Info: J500 Series Vishay Siliconix Current Regulator Diodes J500 J503 J506 J509 J501 J504 J507 J510 J502 J505 J508 J511 PRODUCT SUMMARY TO-226AA TO-92 Modified Part Number Typ IF (mA) POV (V) Part Number Typ IF (mA) POV (V) J500 0.24 50 J506 1.40 50 J501 0.33

Contextual Info: T O SH IB A TC74HC40102,40103AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC40102AP, TC74HC40102AF TC74HC40103AP, TC74HC40103AF TC74HC40102AP/AF DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC40103AP/AF 8 - BIT BINARY PROGRAMMABLE DOWN COUNTER

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

TC74HC40103A

Contextual Info: TOSHIBA TC74HC40102AP/AF TC74HC40103AP/AF TC 74H C 40102 Dual BCD Program m able Down Counter TC74HC40103 8-B it Binary Program mable Down Counter The TC74HC40102A and TC74HC40103A are high speed CMOS PROGRAMMABLE DOWN COUNTERS fabricated with silicon gate C2MOS technology.

Contextual Info: • R A dvanced W .\A p o w e r Te c h n o lo g y “ APT6025BVR 600v 25a 0.250Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: ^ V T C . n c Value the Customer V M 3 1 3 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • High Performance: - Read mode gain = 150 V/V - Low input noise = 0.8nV/VHz maximum - Input capacitance = 25 pF maximum

Contextual Info: ^ LOW POWER HEX TTL-tO-ECL TRANSLATOR SYNERGY SY100S324 SEMICONDUCTOR DESCRIPTION FEATURES The SY100S324 is a hex translator designed to convert TTL logic levels to 100K ECL levels. The inputs are TTL compatible with differential outputs that can either be used

diode zd 12

Abstract: diode zd 33 zd 125
Contextual Info: v T C INC bME D C lv T c .n o V g fe * Y Z S J Q & - • V M 0DD3R75 S33 « V T C /V M 7 2 3 0 7 2 3 0 2 , 4, 6 OR 8-CHANNEL, 5-VOLT, N THIN-FILM HEAD, READ/WRITE PREAMPLIFIER J u ly , 1 9 9 3 TWO/THREE TERMINAL 8 SERVO PREAMPLIFIERS FEA TU R ES • High Performance

diode marking w8

Abstract: diode a7 Diode Marking z3 SOT-23 DIODE marking W4 38 Diode BAW 62 marking A7 diode baw 92 BAW 62 SOT23 diode marking e8 diode marking a4
Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast