DIODE ZD 12 Search Results

marking code diode 04

Abstract: Low Forward Voltage Diode marking code MS SOT Reverse voltage diode Schottky diode low voltage schottky marking code PD sot-23 marking code 1SS392
Contextual Info: 1SS392 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZD" SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol

diode sy 715

Contextual Info: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F

DAF96

Contextual Info: M A ZD A b elvu Q ^p diode pentode Détecteur - Amplificateur A.P. C A R A C T E R IS T IQ U E S G E N E R A L E S Chauffage direct Alimentation du filament en série ou en parallèle Vf If Ampoule .

VM716N8

Contextual Info: ^ ^ V T C In c. Value the CustomerTU FEATURES • High Performance - Read Gain = 200 - 300 V/V Typical - Input Noise = 0.65nV/VHz max - Head Inductance Range = 0 .2 -5 pH 0.5 pH typical - Write Current Range 5 - 35 mA - Low Input Capacitance = 12 pF typical

Contextual Info: WESTERN DIGITAL C O R P O R A T I O N WD1943 8136 Dual Baud Rate Clock XTAL/EXT 1 d + 5V ^ 18 17 16 ZD X TAL/EXT ZD TT ZD T a fR 3 r A 4 15 = 3 Tb r B 5 14 RC 6 13 r d CU 7 12 STR 8 NC 9 11 10 ZD TC ZD TO ZD STT ZD G ND ZD F/4 • OPERATES WITH CRYSTAL OSCILLATOR OR EX­

J555

Abstract: J554 J553 J556 diode j555 DIODE DATABOOK J557 nj16 current regulator diode j555 diode
Contextual Info: Databook.fxp 1/19/99 12:10 PM Page C-6 C-6 01/99 J553, J554, J555, J556, J557 Current Regulator Diode Absolute maximum ratings at TA = 25¡C. ¥ Current Regulation ¥ Current Limiting ¥ Biasing Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation

UZD225

Abstract: for triangulation sensor zener diode 531 1969inch capacitive level sensor circuit drawing M1021 UZD821 UZD822 UZD823 UZD824
Contextual Info: UZD22,225 series 0.6.10 12:08 Page 1 DIE-CAST HOUSING TRIGONOMETRIC AREA REFLECTIVE PHOTOELECTRIC SENSORS UZD22 UZD225 HIGH IMMUNITY TO TARGET COLOR CHANGES WITH DIE-CAST BODY Not Affected Background Object The sensor does not detect background objects. It employs a triangulation

Contextual Info: A • R W .\A A P T 12 0 1 R 5 B V R dvanced pow er Te c h n o l o g y “ 1200V io a 1.500Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

sm25 diode

Contextual Info: WESTCODE An Date:- 12 Jul, 2004 Data Sheet Issue:- 1 IXYS Company Fast Recovery Diode Type M2698Z#250 to M2698Z#350 Old Type No.: SM25-36CXC964 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 2500-3500

Contextual Info: A • R W .\A A P T 12 0 1 R 6 B V R dvanced pow er Te c h n o l o g y “ 8a 1200V 1.600Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

equivalent transistor LM317T

Abstract: schematic diagram lm317t 6v BATTERY CHARGING CIRCUIT lm317 IC LM317T lm317 equivalent data sheet ic lm317t cost of LM317t LM317T battery charger Regulated Power Supply Schematic Diagram lm317 LM317T
Contextual Info: ICS1735EB ICS1735 Evaluation Board General Description Table 1 Cells 3 6 12 Galaxy Power, Inc.'s ICS1735 Evaluation Board helps provide a practical way of evaluating the ICS1735 conditioning/charge method on lead acid batteries. The evaluation board provides

QM75DY-24

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM7 5 DY-2 4 • Ic • V c ex • hFE Collector current. 75A Collector-emitter voltage. 1200V DC current gain. 75

1H5050

Abstract: IH5048 IH5048CPE IH5040 IH5048A IH5048ACPE IH5048CJE IH5048MJE ncz02 IH5049CPE
Contextual Info: /l/l/JX I/l/l 19-0215;Rev. 1; 12/92 CMOS Analog S w itch es _ F e a tu re s Maxim's IH5048-IH5051 analog switches are designed for applications requiring low leakage. They feature ex­ tremely low on resistance 3 0 ii typical as well as quies­

WT 7520

Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
Contextual Info: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature

VM312

Abstract: DIODE H5y VM312-8PMJ VM3128
Contextual Info: V T C In c. V a lu e th e C u s to m e r VM312 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 TWO-TERMINAL READ/WRITE PR E A M PS FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nVA/Hz maximum

zd2500

Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Contextual Info: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS

DIODE H5X

Abstract: diode zd 33 DIODE H5y diode zd 12
Contextual Info: E v ie n e Y I2 J 2 E : - V M 3 1 2 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • The VM312 is a1high-perform ance, low-power, bipolar mono­ lithic read / write pream plifier designed for use with twoterminal thin-film recording heads. It provides write current

JEC 400

Abstract: RBV800 RBV810 diode zd 18 diode zd 12
Contextual Info: r svnSEMi ^ •w — m in c 5YMSEMI 5EMICOMDUCTOR RBV800 - RBV810 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts lo : 8.0 Amperes FEATURES: * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop

Contextual Info: T ì M Ì mm:II m* Ä Q 91 SEMICONDUCTOR DS5001FP 128K Soft Microprocessor Chip FEATURES PIN ASSIGNMENT • 8051-compatible microprocessor adapts to its task - Accesses up to 128 kbytes of nonvolatile SRAM - In-system programming via on-chip serial port - Can modify its own program or data

diode zd 33

Abstract: yy12
Contextual Info: #| v v tc .„ c Value the Customer V M 333 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 1.1 nV/VHz maximum - Input capacitance = 20pF maximum

Contextual Info: WÉÊ VTC Inc. Value the Customer VM7100 2, 4 O R 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/W RITE PR EA M PLIFIE R PRELIMINARY FEATURES D ESCRIPTIO N The VM7100 is a high-performance, very low-power read/ write preamplifier designed for use with external 2-terminal,

TC74HC40102

Abstract: 74HC40103
Contextual Info: TC74HC40102P TC74HC40103P TC74HC40102P DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC401Q3P 8-BIT BINARY PROGRAMMABLE DOWN COUNTER_ The TC74HC40102 and TC74HC40103 are high speed CMOS PROGRAMMABLE DOWN COUNTER fabricated with silicon gate C2MOS technology.

M53242P

Abstract: M53242 M53290P m53290 zenor diode m5324 M58479P M58482P RC oscillator in inverter circuit diagram M5329
Contextual Info: MITSUBISHI LSIs M58479P, M58482P CMOS COUNTER/TIMERS GENERAL DESCRIPTION The M58479P and M58482P are electronic tim er ICs PIN CONFIGURATION TOP VIEW developed by aluminum-gate CMOS technology. Use of these ICs makes possible tim er devices w ithout mechanical

Contextual Info: VBUS054B-HSF Vishay Semiconductors 4-Line BUS-port ESD-Protection FEATURES 6 5 4 • Ultra compact LLP75-6L package • Low package height < 0.6 mm • 4-line USB ESD-protection • Low leakage current 20397 1 2 3 • Low load capacitance CD = 0.8 pF 20453