DIODE VU Search Results

ixys vub 70 -16no1

Abstract: sensor marking code 145A VUB145-16NOXT
Contextual Info: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A

VUB145-16NOXT

Abstract: fast recovery Diode 1200V 200A
Contextual Info: VUB 145-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A

VUB116-16NOXT

Abstract: E72873
Contextual Info: VUB 116-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V = 84 A

VUB120-16NO2

Abstract: marking ntc 80
Contextual Info: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V

E72873

Abstract: VUB116-16NOXT
Contextual Info: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

SEMTECH YEAR DATE CODE

Abstract: SLP2020P6 0504N
Contextual Info: RClamp0504N RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive

0504N

Abstract: semtech ics
Contextual Info: RClamp0504N RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive

1SS398

Contextual Info: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance

VUB145-16NOXT

Contextual Info: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC

TC1068

Abstract: TC1068MQR TCM1617EV TCN75 tc1068.1
Contextual Info: SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT EVALUATION KIT AVAILABLE TC1068 TC1068 SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1068 is a serially programmable temperature sensor optimized for monitoring modern high performance

Contextual Info: NIS6111 Better Efficiency Rectifier System Ultra Efficient, High Speed Diode The NIS6111 ORing diode is a high speed, high efficiency, hybrid rectifier, designed for low voltage, high current systems, such as those required for today’s digital circuits. It couples a high speed

lc03-3.3

Contextual Info: SRV05-4 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has been specifically designed to protect sensitive components which are connected to data and transmission

Contextual Info: MIC2289 White LED Driver Internal Schottky Diode and OVP General Description Features The MIC2289 is a PWM pulse width modulated , boostswitching regulator that is optimized for constant-current white LED driver applications. The MIC2289 features an internal Schottky diode and three levels of output

Contextual Info: SRV05-4 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has been specifically designed to protect sensitive components which are connected to data and transmission

NIS6111QPT1G

Abstract: NIS6111 NIS6111QPT1 NTD110N02R ORing diode FOR 24 VDC REDUNDANT POWER SUPPLY
Contextual Info: NIS6111 BERStIC Better Efficiency Rectifier System Ultra Efficient, High Speed Diode The NIS6111 ORing diode is a high speed, high efficiency, hybrid rectifier, designed for low voltage, high current systems, such as those required for today’s digital circuits. It couples a high speed

SR2.8

Contextual Info: SR2.8 RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features ‹ ESD protection to RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SR series has been specifically designed to protect sensitive components which are connected to data and transmission

PIN Photodiode side look

Abstract: TOLD9442M
Contextual Info: T O SH IB A TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

capacitor 10uf 16v 1206

Abstract: capacitor 10uf 16v
Contextual Info: MIC2290 Micrel MIC2290 2mm x 2mm PWM Boost Regulator with Internal Schotty Diode General Description Features The MIC2290 is a 1.2MHz , PWM, boost-switching regulator housed in the small size 2mm × 2mm MLF -8 package. The MIC2290 features an internal Schottky diode that reduces

Contextual Info: T O SH IB A TOLD9231M TOSHIBA LASER DAIODE InGaAlP TOLD9231M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10—60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE

Contextual Info: SKiiP 232 GDL 120 - 410 CTV E/A Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM

DAiode

Abstract: PIN Photodiode side look
Contextual Info: TO SHIBA TOLD9231M TO SHIBA LASER DAIODE InGaAlP TOLD9231M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~60°C Pin Connection VsVT 1O 9 3 LD (3ï) PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE

Contextual Info: TOLD9221M TO SHIBA TO SHIBA LASER DAIODE InGaAlP TOLD9221M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~60°C Pin Connection VsVT 1O 9 3 LD (3ï) PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE

LTC4416

Contextual Info: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES n n n n n n n n n n DESCRIPTION Low Loss Replacement for Power Diode Controls N-Channel MOSFET 0V to 18V Supply ORing or Holdup 0.5 s Turn-On and Turn-Off Time Undervoltage and Overvoltage Protection