DIODE VN SMD Search Results

smd D3e

Abstract: MARKING D3E D3E SMD
Contextual Info: RB411D Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Dimensions Units : mm 2 9+0 2 1,9±0 2 Features 0 95 0 9I • available in SMD3 (SMD, SC-59) package (similar to SOT-23)

S4 DIODE

Abstract: DIODE S4 marking code s4 diode diode MARKING CODE S4 MAM172 DIODE marking S4 DIODE s4 marking code smd diode S4 28
Contextual Info: Short-form product specification Philips Semiconductors BBY62 Double variable capacitance diode QUICK REFERENCE DATA APPLICATIONS • Electronic tuners using SMD technology. SYMBOL CONDITIONS PARAMETER MIN. TYP. MAX. UNIT - - 28 V Per diode DESCRIPTION Double variable capacitance diode in

Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA8S03G RoHS Device Voltage: 10Volts Current: 50 mA Package (SOT-23) Feature Marking “ CDA8 “ Schematic This diode network is designed to provide an integrated solution for the active termination of

Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA2Q20-G RoHS Device C 0212 CDA2Q20 Voltage: 10Volts Current: 25 mA Package (QSOP-20) Feature This diode network is designedto provide seventeenchannels for active termination of high-speed data signals to eliminate

Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designed to provide six channels for active termination of high-speed data signals to eliminate signal undershoot and

Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA2Q20G RoHS Device C 0212 CDA2Q20 Voltage: 10Volts Current: 25 mA Package (QSOP-20) Feature This diode network is designed to provide seventeen channels for active termination of high-speed data signals to eliminate

diode BAND

Abstract: DAN235K
Contextual Info: Diodes Band Switching Diode Array DAN235K •Applications •External dimensions Units: mm High frequency diodes High frequency switching •Features 1) Designed for mounting on small surface areas (SMD3) 2)High reliability •Construction Band switching diodes

Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA7Q24-G RoHS Device Package (QSOP-24) Feature Schematic This diode network is designed to provide eighteen channels for active termination of high-speed data signals to 0212 CDA7Q24 C Voltage: 13 Volts

Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA7Q24G RoHS Device C Voltage: 13 Volts Current: 50 mA Package (QSOP-24) Feature Schematic This diode network is designed to provide eighteen channels for active termination of high-speed data

Contextual Info: COMCHIP Diode Network / ESD Suppressor SMD DIODE SPECIALIST CDA6N08-G RoHS Device Voltage: 13 Volts Current: 50 mA Package (NSOIC-8) Feature Marking “ CDA6 “ This diode network is designedto provide six channels for active termination of high-speed data signals to eliminate signal undershootand

29 DIODE SMD CODE MARKING

Abstract: diode smd marking "147"
Contextual Info: SIEMENS BB 659 Silicon Tuning Diode • For VHF-TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Extremely small plastic SMD package • Excellent uniformity and matching due to "in-line" matching assembly procedure

Contextual Info: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed B A S 16W QUICK REFERENCE DATA SYMBOL MAX. UNIT continuous reverse voltage 75 V V RRM repetitive peak reverse

DIODE SMD 10A

Abstract: BAA SMD CODE MARKING smd marking code KN BAS55 smd code marking LF sot23
Contextual Info: Philips Semiconductors Product specification High-speed diode BAS55 FEATURES DESCRIPTION • Small plastic SMD package The BAS55 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23 package.

Contextual Info: MINI-MELF-SMD Silicon Diode 1N4148UR-1 Applications Switching Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. LL-34/35 MINI MELF Features Surface Mo un t P ac kag e D O- 2 13 AA

1PS193

Abstract: ML834 SC59 marking f3t 14E marking code SMD
Contextual Info: N AUER P H I L I P S / D I S C R E T E bTE » m ^53=131 0027101 Philips Semiconductors D?T H i A P X Preliminary specification 1 P S 193 High sp eed dio de FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application.

Contextual Info: LL4454 or 1N4454UR-1 M INI-M ELF-SMD Applications ID Silicon Switching Diode Used in general purpose applications, where performance, space and switching speed are important. 1N4454UR-1 / LL4454 LL-34/35 MINI-MELF SMD Package DO-213AA (nominal dimensions)

Diode marking 27C

Abstract: Ss 24 DIODE SMD SMD Marking jx diode smd marking jx MARKING CL4 smd marking YF smd diode 27c diode smd marking VD mark g1f
Contextual Info: Schottky Barrier Diode Single Diode m tm m DG1S4 o u tlin e Package :G 1 F Unu:mm Weight O.Ollii Typ 4 0 V 1A 35 <2) Feature •Î8/J\5!JSMD • • Ultra-small SMD • Ultra-thin PKG=0.8mm • Low VF-0.55V 0.8mm • ô V f =0.55V i |L71 C a th o d e m a rk

usb002

Contextual Info: 05244 USB002 Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE STEERING DIODE ARRAY DESCRIPTION The USB002 is an ultra low capacitance 0.6pF steering diode array. This device provides circuit protection for interfaces and wireless bus applications and portable electronics. The USB002 is ideally suited to protect USB data

smd diode schottky code marking 2F

Abstract: smd diode schottky code marking nu T13c marking smd NU smd code marking 4A diode smd k9 MARKING JM smd diode marking 325 smd marking code nu
Contextual Info: Schottky Barrier Diode Single Diode m tm m o u tlin e Package : 2F D3FP3 Unit-mm Weight 0.16g Typ ij y -K -7 -9 30V 3A / Cathode mark Feature • Small SMD • Ultra-Low Vf=0.4V • K y T 'J H f f iS K it • Reverse connect protection for DC power source

DIODE vn SMD

Contextual Info: bbS3^31 005b3fl7 7SS MARX Philips Semiconductors Preliminary specification BB131 VHF variable capacitance diode N AHLR PHILIPS/DISCRETE DESCRIPTION bTE D — • QUICK REFERENCE DATA The BB131 is a silicon variable capacitance diode in planar technology, intended for use as a

Contextual Info: MINI-MELF-SMD o Applications Silicon Diode L L 4 1 5 0 1 N r 5 0 U 4 1 R Switching - 1 I D Used in general purpose applications, where a low current controlled forward characteristic and fast switching speed are important. BKC can produce generic equivalents to JAN/ TXZTXV and S level per

a17 smd diode

Abstract: marking smd NU JT MARKING smd marking MY SM3 DIODE
Contextual Info: Schottky Barrier Diode Single Diode m tm m o u tlin e Package :G1F DG1M3A Unu:mm W eight O .O llii Typ in 30V 1.5A Feature • g /J 'fflS M D • Ultra-small SMD • |g n i^ = 0 .8 m m • Ultla-thin PKG=0.8mm • < 5V f = 0 .4 6 V • Low V f-0 .46V • 1KIr = 0.05mA

Contextual Info: 05244 USB002 Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE STEERING DIODE ARRAY DESCRIPTION T USB F IO T ESD T EFT USB IEC ESD SOT SOT USB USB EFT A T USB PACKAGE APPLICATIONS FEATURES • • • • • • • • • IEC T C IEC C IEC ESD P

IMN11

Abstract: UMN1N FMN1
Contextual Info: Ultra High-Speed Switching Diode Array FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N •Features 1 Three or four diodes contained in sam e area as SMD3 and UMD3. 2)Can be mounted using automatic mounters. 3)AII diodes have the same characteristics.