DIODE V6 ON Search Results

MA4E2054E-1068T

Abstract: LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T MA4E2054 equivalent of v6 surface mount diode DIODE 1581
Contextual Info: Also Offering RoHS Compliant Equivalent Parts MA4E2054 Series V6 Surface Mount Low Barrier Schottky Diode Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS

Contextual Info: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

marking code V6 diode

Abstract: V6 marking code diode SMD Diode V6 marking code V67D marking code V6 rectifier DIODE D1F60 diode marking v6 V6 7D marking code V6 7d marking v6 diode
Contextual Info: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE D1F60 Unit : mm Weight : 0.058g （typ.） Package：1F 600V 1A 特長 ① • 耐湿性に優れ高信頼性 Feature V6 7D カソードマーク

MASW-000553-13220G

Abstract: macom rf switch MASW-000553 macom pin diode application
Contextual Info: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz ♦ Functional Bandwidth : 50 MHz to 70 GHz ♦ 0.8 dB Insertion Loss, ♦ 31 dB Isolation at 50 GHz ♦ Low Current consumption. • -10mA for low loss state

Contextual Info: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch V6 FEATURES •     Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption

Contextual Info: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance

Contextual Info: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance

diode V6

Abstract: v6 diode diode v6 98
Contextual Info: Part Number: TNI12W T-1 3/4 5mm INFRARED EMITTING DIODE www.SunLED.com Features Package Schematics ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● Available on tape and reel ● RoHS Compliant Notes: 1. All dimensions are in millimeters (inches).

diode v6 90

Abstract: diode V6 V6 diode
Contextual Info: Part Number: XTNI30W T-1 3mm INFRARED EMITTING DIODE Features Package Schematics ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● Available on tape and reel ● RoHS Compliant Notes: 1. All dimensions are in millimeters (inches).

diode V6

Abstract: diode v6 90 v6 diode diode V6 on
Contextual Info: Part Number: XTNI30BF T-1 3mm INFRARED EMITTING DIODE Features Package Schematics ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● Available on tape and reel ● RoHS Compliant Notes: 1. All dimensions are in millimeters (inches).

charging lithium ic

Abstract: MM1332 MM1333
Contextual Info: MITSUMI Control for Lithium Ion Battery Charging one cell MM1333 Control for Lithium Ion Battery Charging (one cell) Monolithic IC MM1333 Outline This IC was developed for use in charging lithium ion batteries. PNP power transistor or P-MOS FET is mounted externally to control charging. This IC is for use with a single cell only, and provides precise control

O10003

Abstract: cr 406 transistor CD 4050 pin diagram
Contextual Info: MâïSUMÎ Lithium Ion Battery Charging one cell MM1333 Monolithic IC MM1333 This IC was developed for use in charging lithium ion batteries. A power transistor or P-MOS FET is mounted externally to control charging. This IC is for use with a single cell only, and provides precise control of the

Contextual Info: r r w m _ TECHNOLOGY H a lf B rid g e N -C h a n n e l Pow er MOSFET Driver FCflTURCS DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ A single input pin on the LT1158 synchronously controls two N-channel power MOSFETs in a totem pole configura­

v6425

Abstract: ka2153 LINEAR INVERTER circuit diagram inverter-amplifier 11S2 2AV9 500KHZ
Contextual Info: KA2153 LINEAR INTEGRATED CIRCUIT VIDEO-CHROMA DEFLECTION SYSTEM FOR A COLOR TV NTSC 42 DIP The KA2153 combines the video-chroma sub-system and the deflection combination on a single monolithic integrated circuit to provide a color television video-chroma deflection system.

vogt v6

Abstract: vogt v4 vogt s1 L296 vogt V5 L296P 58930 scr preregulator L296PHT cogema coil 14.5
Contextual Info: L296 L296P HIGH CURRENT SWITCHING REGULATORS . . . . . . . 4 A OUTPUT CURRENT 5.1 V TO 40 V OUTPUT VOLTAGE RANGE 0 TO 100 % DUTY CYCLE RANGE PRECISE ±2 % ON-CHIP REFERENCE SWITCHING FREQUENCY UP TO 200 KHz VERY HIGH EFFICIENCY (UP TO 90 %) VERY FEW EXTERNAL COMPONENTS

vogt s1

Abstract: cogema 946044 vogt s2 vogt V5 L296 58930 scr v12 L296HT L296P L296PHT
Contextual Info: L296 L296P HIGH CURRENT SWITCHING REGULATORS . . . . . . . 4 A OUTPUT CURRENT 5.1 V TO 40 V OUTPUT VOLTAGE RANGE 0 TO 100 % DUTY CYCLE RANGE PRECISE ±2 % ON-CHIP REFERENCE SWITCHING FREQUENCY UP TO 200 KHz VERY HIGH EFFICIENCY (UP TO 90 %) VERY FEW EXTERNAL COMPONENTS

scr preregulator

Abstract: vogt v6 L296 vogt s1 vogt v5 58930 Siemens EC 35/17/10 thomson gup toroid transistor 6c x vogt l4
Contextual Info: L296 L296P HIGH CURRENT SWITCHING REGULATORS . . . . . . . 4 A OUTPUT CURRENT 5.1 V TO 40 V OUTPUT VOLTAGE RANGE 0 TO 100 % DUTY CYCLE RANGE PRECISE ±2 % ON-CHIP REFERENCE SWITCHING FREQUENCY UP TO 200 KHz VERY HIGH EFFICIENCY (UP TO 90 %) VERY FEW EXTERNAL COMPONENTS

Contextual Info: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor Features n n n n n n n n n n n n Description Measures Voltage, Current, Temperature Measures Four Remote Diode Temperatures 0.7°C Typ Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor

HV9110

Abstract: HV9113 HV9120 HV9123
Contextual Info: HV91 Series Application Note AN-H24 Expected Voltages and Waveforms from an HV9120-Controlled Flyback Converter The following drawings provide details of the waveforms that one should expect to see at selected points around the converter circuit. For reference purposes, each voltage and time is defined

2C2 zener

Abstract: transistor smd zG diode zener zp v2 CZRER52C2 smd zG transistor smd z9 2c7 power diode z5 zener diode SMD Transistor z6 5V1 SMD ZENER
Contextual Info: SMD Zener Diode SMD Diodes Specialist CZRER52C2 Thru CZRER52C39 RoHs Device Voltage 2 to 39 Volts Power 150 mWatts 0503(1308) Features 0.053(1.35) 0.045(1.15) 150mW Power Dissipation. High Voltages from 2 ~ 39 V. 0.034(0.85) 0.026(0.65) Designed for mounting on small surface.

DIODE V6 SMD

Abstract: diode zp V6 v6 zener diode smd R5 DIODE
Contextual Info: SMD Zener Diode SMD Diodes Specialist CZRER52C2 Thru CZRER52C39 RoHS Device Voltage 2 to 39 Volts Power 150 mWatts 0503(1308) Features 0.053(1.35) 0.045(1.15) 150mW Power Dissipation. High Voltages from 2 ~ 39 V. 0.034(0.85) 0.026(0.65) Designed for mounting on small surface.

Contextual Info: SMD Zener Diode SMD Diodes Specialist CZRERT52C2 Thru CZRERT52C39 RoHS Device Voltage 2 to 39 Volts Power 150 mWatts 0503(1308) Features 0.053(1.35) 0.045(1.15) 150mW Power Dissipation. High Voltages from 2 ~ 39 V. 0.034(0.85) 0.026(0.65) Designed for mounting on small surface.

transistor c 4058

Abstract: 4058 74 c23 52c45 ic 4058 DATASHEET S85 452 MSM6794 PEDL6794-03 PEDL6794-04 "c32 4058"
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.