DIODE V6 34 Search Results

AT10-0019

Abstract: AT10-0019-TB AT10-0019TR M513 MAAV-007088-000100
Contextual Info: AT10-0019 PIN Diode Based Variable Attenuator, 50 - 1000 MHz Rev. V6 Features • • • • • • Functional Schematic High Dynamic Range: 42dB Typical Flat Attenuation vs. Frequency High P1dB Compression Operates on a Single +5V Supply: 50 Ohm Nominal Impedance

MASW-001100-1190

Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G
Contextual Info: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation than pHempt

Contextual Info: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs

MASW-001100-1190

Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512
Contextual Info: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches RoHs Compliant Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

MA4GP907

Abstract: 10ghz pin diode
Contextual Info: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL

diode V6 57

Contextual Info: SKN 60F THYRISTOR BRIDGE,SCR,BRIDGE Stud diode Fast Recovery Rectifier Diode SKN 60F SKR 60F Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5677 8 (),)(9) ,+'1&/) # :)(%)1;* %)1&' *&9) <;1. /'&99 # # ;=9>'&1+( ?.()&-)- 91>-9 @$A BC &=- BD $EFG &=+-) 1+ 91>-H $EIG

diode marking v6

Contextual Info: Data Sheet BUY25CS54A-01 HiRel RadHard Power-MOS •      Low RDS on 1 Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm VGS = -10V, VDS = 250V VGS = -15V, VDS = 250V VGS = -15V, VDS = 120V VGS = -20V, VDS = 160V

TSSOP8 Package

Abstract: international rectifier power mosfets catalog mosfet catalog international rectifier
Contextual Info: PD-96020A IRF7754PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel Lead-Free VDSS RDS(on) max ID -12V 25mΩ@VGS = -4.5V 34mΩ@VGS = -2.5V -5.4A 49mΩ@VGS = -1.8V

diode v6 90

Abstract: diode V6 V6 diode
Contextual Info: Part Number: XTNI30W T-1 3mm INFRARED EMITTING DIODE Features Package Schematics ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● Available on tape and reel ● RoHS Compliant Notes: 1. All dimensions are in millimeters (inches).

diode V6

Abstract: diode v6 90 v6 diode diode V6 on
Contextual Info: Part Number: XTNI30BF T-1 3mm INFRARED EMITTING DIODE Features Package Schematics ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● Available on tape and reel ● RoHS Compliant Notes: 1. All dimensions are in millimeters (inches).

MA4GP907

Contextual Info: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation

Contextual Info: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation

diode V6

Abstract: mavr MAVR-002300-12790T MAVR-002400-12790T MAVR-002500-12790T MAVR-002600-12790T MA4ST2000 MA4ST2200-1141T MAVR-002200-12790T IR 4609
Contextual Info: Also Offering RoHs Compliant Equivalent Parts MA4ST2000 Series Ultra High Ratio Si Hyperabrupt Varactor Diode SC-70 3 Features • • • • Ultra High Capacitance Ratio, C(0.1V /C(4.7V) =18:1 C(0.1V)/C(2.7V) = 12:1 Surface Mount Plastic Packages : SC-79, SOD-323,

MADP-000421-12940P

Abstract: 25E-13 MA4SPS422 PIN diode MACOM SPICE model HP4291A MA4SPS421 MA4SPS42X ODS-186
Contextual Info: MA4SPS42X Series SURMOUNTTM PIN Diodes MA4SPS421, MA4SPS422 M/A-COM Products RoHS Compliant Rev. V6 MA4SPS421 MA4SPS422 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Surface Mount No Wire Bonding Required Rugged Silicon-Glass Construction Silicon Nitride Passivation

EN 60825-1

Contextual Info: SPECDILAS IR series SPECDILAS IR-XXXX LASERS FOR INFRARED SPECTROSCOPY Single mode laser diode with double-hetero-structure for high resolution spectroscopy available for following wavenumbers: 1000 – 3400 cm-1 2.94 – 10 µm continuous operation (cw)

2933 Voltage Regulator

Abstract: 2933
Contextual Info: LTC2933 Programmable Hex Voltage Supervisor with EEPROM FEATURES DESCRIPTION Supervises 6 Power Supplies n I2C Adjustable UV and OV Trip Points n Guaranteed Threshold Accuracy: ±1% n I2C/SMBus Interface n Internal EEPROM n 256 Programmable Thresholds per Channel

TEA2031

Abstract: colour tv circuit diagram blocking DIODE V6 sgs 8 r 15 TEA2031A 1N4148 KEYSTONE 500
Contextual Info: TEA2031A COLOR TV EAST-WEST CORRECTION . . . . . . BUILD IN FRAME PARABOLA FROM EXTERNAL SAW-TOOTH PARABOLA CORRECTION ADJUSTMENT KEYSTONE CORRECTION ADJUSTMENT LINE SIZE ADJUSTMENT LINE DYNAMIC CORRECTION POSSIBILITY beam current D CLASS OUTPUT MODULATOR WITH

TEA2031A

Abstract: 1N4148
Contextual Info: TEA2031A COLOR TV EAST-WEST CORRECTION . . . . . . BUILD IN FRAME PARABOLA FROM EXTERNAL SAW-TOOTH PARABOLA CORRECTION ADJUSTMENT KEYSTONE CORRECTION ADJUSTMENT LINE SIZE ADJUSTMENT LINE DYNAMIC CORRECTION POSSIBILITY beam current D CLASS OUTPUT MODULATOR WITH

fly-back

Abstract: sawtooth TEA2031A TEA2031 1N4148
Contextual Info: TEA2031A COLOR TV EAST-WEST CORRECTION . . . . . . BUILD IN FRAME PARABOLA FROM EXTERNAL SAW-TOOTH PARABOLA CORRECTION ADJUSTMENT KEYSTONE CORRECTION ADJUSTMENT LINE SIZE ADJUSTMENT LINE DYNAMIC CORRECTION POSSIBILITY beam current D CLASS OUTPUT MODULATOR WITH

Contextual Info: 19-3527; Rev 0; 3/05 High-Efficiency, Low-IQ PMIC with Dynamic Core for PDAs and Smartphones Features The MAX8588 power-management IC is optimized for devices using Intel X-Scale microprocessors, including smartphones, PDAs, internet appliances, and other

1N4148

Abstract: MAX1724 MAX8588 MAX8588ETM
Contextual Info: 19-3527; Rev 0; 3/05 High-Efficiency, Low-IQ PMIC with Dynamic Core for PDAs and Smartphones Features The MAX8588 power-management IC is optimized for devices using Intel X-Scale microprocessors, including smartphones, PDAs, internet appliances, and other

Contextual Info: 19-3527; Rev 0; 3/05 High-Efficiency, Low-IQ PMIC with Dynamic Core for PDAs and Smartphones Features The MAX8588 power-management IC is optimized for devices using Intel X-Scale microprocessors, including smartphones, PDAs, internet appliances, and other

Maxim PMIC

Abstract: FB 3307
Contextual Info: 19-3527; Rev 0; 3/05 High-Efficiency, Low-IQ PMIC with Dynamic Core for PDAs and Smartphones Features The MAX8588 power-management IC is optimized for devices using Intel X-Scale microprocessors, including smartphones, PDAs, internet appliances, and other