DIODE V1J Search Results

DJ26

Contextual Info: A dvanced P o w er Te c h n o lo g y APT5020SVFR 500V POWER MOS V 26A 0.200Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

V1J diode

Abstract: DIODE V1J
Contextual Info: OMS305 OMS305A QMS405 3 PHASE, LOW VOLTAGE, LOW RDS on > MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P h a s e , 50 Volt, 15 To 45 A m p B r i d g e W i th C u r r e n t A n d T e m p e r a t u r e S e n s i n g In A L o w Profile P a c k a g e FEATURES

2SK944

Contextual Info: TOSHIBA 2SK944 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O SII 2SK944 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1 5.9 M A X.

K1792

Contextual Info: TOSHIBA 2SK1792 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 792 HIGH SPEED SWITCHING APPLICATIONS. RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS. INDUSTRIAL APPLICATIONS TO-22QFL _ U nit in mm 10.3M AX.

10BQ100PbF

Contextual Info: VS-10BQ100PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term

2SK1746

Abstract: 103m Transistor
Contextual Info: TOSHIBA 2SK1746 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O SII 2 S K 1 746 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • Unit in mm 10.3M AX. Low Drain-Source ON Resistance : Rd S(ON) —3.00 (Typ.)

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TO SH IBA TECHNICAL 2 S K 1 489 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II •5 (2SK 1489) INDUSTRIAL APPLICATIONS U n it in mm CHOPPER REGULATOR APPLICATIONS. HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2 S K 1 119 DATA SILICON N CHANNEL MOS TYPE 7T- M O S II • 5 (2SK1119) INDUSTRIAL APPLICATIONS U n it in mm HIGH SPEED, HIGH C URRENT SW ITC H IN G APPLICATIONS. DC-DC CO NVERTER A N D M O TO R DRIVE APPLICATIO N S.

V1J diode

Abstract: DIODE V1J marking code DIODE V1J Diode marking code v1j V1J DO-214AA Diodes v1j 95029 MARKING V1j marking code MARKING CODE V1J v1j RECTIFIER
Contextual Info: 10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMB • Compliant to RoHS directive 2002/95/EC

V1J diode

Abstract: DIODE V1J 10bq100pbf DO-214AA, SMB v1J Datasheet V1j marking code DIODE V1J marking code
Contextual Info: 10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable Available • Low forward voltage drop RoHS* • High frequency operation Cathode Anode COMPLIANT • Guard ring for enhanced ruggedness and long term

DIODE V1J marking code

Abstract: V1J diode 10bq100pbf V1j marking code Diode marking code v1j VS-10BQ100
Contextual Info: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

2x4700

Contextual Info: EMC Considerations VI-200/M1-200, V1-J00/MI-J00, Mega Modules The DC Source V icor’s DC to DC converters have several input ranges and are designed to accommodate the dynamic conditions common in computers, industrial control systems, military products,

V1J diode

Abstract: DIODE V1J marking code V1J DO-214AA
Contextual Info: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

DIODE V1J marking code

Abstract: Diodes v1j DIODE V1J V1J diode V1J DO-214AA
Contextual Info: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

V1J diode

Contextual Info: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

Contextual Info: VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode • High frequency operation Anode • Guard ring for enhanced ruggedness and long term

94119

Contextual Info: VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA

V1J diode

Abstract: DIODE V1J marking code DIODE V1J V1j marking code MARKING CODE V1J Diodes v1j Diode marking code v1j SMA V1J 94119
Contextual Info: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA • Compliant to RoHS directive 2002/95/EC

V1J diode

Abstract: DIODE V1J marking code Diodes v1j MARKING CODE V1J V1j marking code V1J SMA DIODE V1J 95029 MARKING SMA V1J diode Diode marking code v1j
Contextual Info: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA • Lead Pb -free (“PbF” suffix)

V1J diode

Abstract: DIODE V1J MARKING V1J V1j marking code DIODE V1J marking code 10MQ100NPBF v1J Datasheet 95029 10MQ100 95029 MARKING
Contextual Info: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable Available • Low forward voltage drop RoHS* • High frequency operation Cathode Anode COMPLIANT • Guard ring for enhanced ruggedness and long term

V1J diode

Abstract: V1j marking code DIODE V1J marking code VS-10MQ100NPBF Diodes v1j vs10mq100npbf DIODE V1J Diode marking code v1j V1J SMA VS-10MQ100N
Contextual Info: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

diode SMA marking code PB

Abstract: V1J diode 94119
Contextual Info: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

V1j marking code

Abstract: V1J diode
Contextual Info: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of

Contextual Info: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of