DIODE V101 Search Results

ISV101

Abstract: 30VForward VR30
Contextual Info: FTCW/.RD V < T 3 i « n a « L ELZKrRCt<KS LTD IS V101 SEMICONDUCTOR TECHNICAL DATA VARIABLE CA PACITANCE DIODE Features ^Excellent Linearity, *High Capacitance; "Low Series Re si stance; *Small Package. Package: TO-92 xAtppli cations Elec troriic Tuning in V HF Television tune rs barid a CP To 100MHz

SKKE400F

Contextual Info: S1E D • a i 3 b b 7 1 G Q 0 3 4 4 T 3TT m S Z K G s e MIKRD n S E H I K R O N INC Ifrms maximum value for continuous operation Vrsm Vrrm 650 A Fast Diode Modules SKKE400F Ifav (sin. 180;Tease = 89°C;50Hz) V 400 A 800 SKKE 400 F 08 1200 S K K E400 F 12

diode

Abstract: J-STD-002
Contextual Info: New Product V10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation

J-STD-002

Contextual Info: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

V10-150

Abstract: J-STD-002
Contextual Info: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

Contextual Info: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

Contextual Info: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

Contextual Info: V10150C, VF10150C, VB10150C, VI10150C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

J-STD-002

Abstract: V10150C
Contextual Info: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

Contextual Info: New Product V10150C, VF10150C, VB10150C & VI10150C Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

Contextual Info: V10150C, VI10150C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product V10150C, VI10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

Contextual Info: V10170C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: New Product V10150C, VI10150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses

v1017

Contextual Info: V10170C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: V10170C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: V10150S, VI10150S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses

Contextual Info: V10150S, VF10150S, VB10150S, VI10150S www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses

Contextual Info: New Product V10150S, VF10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

Contextual Info: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

J-STD-002

Contextual Info: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power

Contextual Info: New Product V10150S, VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses

J-STD-002

Contextual Info: New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power